Abstract：Commercial gallium nitride (GaN) switches are widely used in power electronic converters recently years due to their advantages such as fast switching speed and low turn-on resistance. Accordingly, resonant gate drivers are adopted to reduce drive loss in high frequency and low power applications. However, different from Si switches, the turn-on threshold voltage of GaN switches is quite low and GaN switches have no body diode, which causes large reverse voltage drop. Therefore, traditional resonant gate drivers are not suitable for GaN switches. In order to solve the drive signal oscillation caused by parasitic parameters in high frequency applications, a resonant gate driver with asymmetrical voltage is proposed in this paper. Besides, for applications that require two synchronous switches, such as switch inductor converters, a transformer with two groups of secondary sides is added. The working principles are presented and parameters are optimized for lower loss. A 1MHz prototype is designed for experimental verification. The experimental results are in good agreement with the theoretical analysis.
高珊珊, 王懿杰, 刘怡宁, 徐殿国. 针对GaN器件的非对称双路同步谐振栅极驱动电路[J]. 电工技术学报, 2021, 36(20): 4185-4193.
Gao Shanshan, Wang Yijie, Liu Yining, Xu Dianguo. Resonant Gate Driver with Asymmetrical Voltage and Two Synchronous Drive Signals for GaN Switches. Transactions of China Electrotechnical Society, 2021, 36(20): 4185-4193.
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2021, Vol. 36 
