摘要 该文针对基于共源共栅氮化镓高电子迁移率晶体管（Cascode GaN HEMT）的直流固态功率控制器（SSPC）在开通过程中的振荡问题,利用Spice模型与Q3D软件提取Cascode结构内部寄生参数,结合SSPC实际工作情况和Cascode结构对开通和关断过程进行分析,在Saber软件中对SSPC开通过程进行仿真分析。仿真结果表明,振荡产生的主要原因是,在SSPC开通过程中,Cascode GaN HEMT长时间工作在饱和区,容易受到外界干扰产生振荡,且内部存在正反馈环路。针对该问题,该文提出并联RC吸收电路和增大门级驱动电阻的方案,实验结果表明,所提出的方案可以有效抑制振荡。
Abstract：In this paper, the oscillation problem of DC solid-state power controller (SSPC) based on Cascode Gallium Nitride high electron mobility transistor (Cascode GaN HEMT) during the turn-on process is analyzed. The SPICE model and Q3D software are used to extract the internal parasitic parameters of the Cascode structure. Combining the actual working conditions of the DC SSPC and the Cascode structure, the turn-on and turn-off process of the SSPC is simulated and analyzed in the Saber software. The simulation results show that one of the causes of the oscillation is that Cascode GaN HEMT works in the saturation region for a long time during the SSPC turn-on process, and is so susceptible to external interference to cause oscillation, and the another cause is a positive feedback loop inside . To solve this problem, the scheme of paralleling RC absorption circuit and increasing gate drive resistance is proposed. Experimental verification shows that the proposed scheme can effectively suppress the oscillation.
赵瑞博, 王莉, 黄瑞. 直流固态功率控制器中Cascode型GaN HEMT开关过程的振荡问题[J]. 电工技术学报, 2022, 37(zk1): 267-276.
Zhao Ruibo, Wang Li, Huang Rui. Cascode GaN HEMT Switching Process Oscillation in DC Solid State Power Controller. Transactions of China Electrotechnical Society, 2022, 37(zk1): 267-276.
[1] Molligoda D A, Chatterjee P, Gajanayake C J, et al.Review of design and challenges of DC SSPC in more electric aircraft[C]//IEEE 2nd Annual Southern Power Electronics Conference (SPEC), Auckland, New Zealand, 2016: 1-5. [2] 徐洁. 多电飞机分布式智能配电技术研究[D]. 成都: 电子科技大学, 2013. [3] Telford R D, Galloway S J, Burt G M.Evaluating the reliability & availability of more-electric aircraft power systems[C]//47th International Universities Power Engineering Conference (UPEC), London, UK, 2012: 1-6. [4] Satoh T, Osawa K, Nitta A.GaN HEMT for space applications[C]//IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, 2018: 136-139. [5] 施媛媛. 硅基GaN功率器件缺陷相关可靠性机理研究[D]. 成都: 电子科技大学, 2019. [6] 赵清林, 崔少威, 袁精, 等. 低压氮化镓器件谐振驱动技术及其反向导通特性[J]. 电工技术学报, 2019, 34(增刊1): 133-140. Zhao Qinglin, Cui Shaowei, Yuan Jing, et al.Resonant drive technology and reverse conduction characteristics of low voltage GaN devices[J]. Transactions of China Electrotechnical Society, 2019, 34(S1): 133-140. [7] 李艳, 张雅静, 黄波, 等. Cascode型GaN HEMT输出伏安特性及其在单相逆变器中的应用研究[J]. 电工技术学报, 2015, 30(14): 295-303. Li Yan, Zhang Yajing, Huang Bo, et al.Research on output volt-ampere characteristics of Cascode GaN HEMT and its application in single-phase inverter[J]. Transactions of China Electrotechnical Society, 2015, 30(14): 295-303. [8] Huang Xiucheng, Liu Zhengyang, Lee F C, et al.Characterization and enhancement of high-votlage Cascode GaN devices[J]. IEEE Transactions on Electron Devices, 2015, 62(2): 270-277. [9] 张雅静, 郑琼林, 李艳. 考虑寄生参数的高压GaN高电子迁移率晶体管的逆变器动态过程分析[J]. 电工技术学报, 2016, 31(12): 126-134. Zhang Yajing, Zheng Qionglin, Li Yan.Dynamic analysis of inverter based on high voltage GaN high electron mobility transistor[J]. Transactions of China Electrotechnical Society, 2016, 31(12): 126-134. [10] 黄瑞. 基于GaN的直流固态功率控制器控制与保护技术研究[D]. 南京: 南京航空航天大学, 2020. [11] Huang Xiucheng, Du Weijing, Lee F C, et al.Avoiding divergent oscillation of a Cascode GaN device under high-current turn-off condition[J]. IEEE Transactions on Power Electronics, 2017, 32(1): 593-601. [12] Xue Peng, Maresca L, Riccio M, et al.Investigation on the short-circuit oscillation of Cascode GaN HEMTs[J]. IEEE Transactions on Power Electronics, 2020, 35(6): 6292-6300. [13] Xue Peng, Maresca L, Riccio M, et al.Experimental study on the short-circuit instability of Cascode GaN HEMTs[J]. IEEE Transactions on Electron Devices, 2020, 67(4): 1686-1692. [14] Chokhawala R S, Catt J, Kiraly L.A discussion on IGBT short-circuit behavior and fault protection schemes[J]. IEEE Transactions on Industry Applications, 1995, 31(2): 256-263. [15] 吴学超, 王莉, 阮立刚. 大功率直流SSPC短路保护关断振荡的分析与抑制[C]//中国高校电力电子与电力传动年会, 武汉, 中国, 2014: 1-4. [16] Izquierdo D, Barrado A, Fernández C, et al.Behavioral model for solid-state power controller[J]. IEEE Aerospace and Electronic Systems Magazine, 2013, 28(12): 4-11.
2022, Vol. 37 
