Abstract：Junction-to-ambient thermal network model is an important foundation for evaluating heat-sinking capability and remaining life of power devices, because it can estimate the variation of power device junction temperature with the ambient temperature. However, the traditional junction-to-ambient thermal network model generally assumes that the power devices works in the stable ambient environment, ignoring the random effect of thermal convection on the power device. As a result, it is difficult to effectively describe the variation characteristic of junction temperature. In this paper, a new junction-to-ambient thermal network model of power devices considering the randomness of thermal convective environment was proposed. In the proposed model, the samples of convective thermal resistances between the heat sink and ambient environment were calculated with the historical power loss and temperature data of power device. Then, the wavelet packet transform and Markov chain method were employed to randomly simulate the convective thermal resistance. Finally, the random fluctuation of power device junction temperature can be estimated under the specified current and ambient temperature conditions. A random thermal convection experimental platform was designed and the power MOSFETs were used as the experimental subjects. The experimental results show that the proposed model can effectively describe the uncertain change of power device junction temperature under the action of random thermal convection, and can provide important data support for the development of power device thermal safety evaluation and lifetime prediction methods.
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2021, Vol. 36 
