Detection and Analysis of Stress Wave in Power Electronic Device Packaging Insulation under Interface Defects and Aging Conditions
He Dongxin1, Wei Junyu1, Wang Wanjun2, Xu Zhe1, Li Qingquan1
1. Shandong Provincial Key Laboratory of UHV Transmission Technology and Equipment School of Electrical Engineering Shandong University Jinan 250061 China; 2. State Grid Shandong Jinan Electric Power Company Jinan 250000 China
Abstract：Power electronic devices generate stress wave during operation. This signal can reveal the internal information and working state of the devices, and can be used for on-line monitoring of power electronic devices. It is found that there are many stress wave emission sources in the devices. However, the existing research mainly focuses on the stress wave generated by the whole device, but ignores the correlation between the specific defect types and the stress wave. To solve this problem, this paper proposes a stress wave research method based on artificially set defects to explore the direct relationship between defect form and stress wave characteristics. Firstly, from the phenomenon that space charge generates acoustic signals after being disturbed by pulsed electric field, the formation mechanism of stress wave is analyzed from the perspective of packaging insulation. It is found that the vibration of space charge at the edge of pulse in insulating material may be one of the emission sources of stress wave. Then the samples with single interface defects and aging defects were set, and the stress wave was detected. In the time domain and frequency domain, the stress wave generated by the defective samples are compared with those generated by the normal samples, to explore the influence of different defect types on stress wave parameters. The experimental results show that the stress wave generated by the sample with interface defects can be regarded as the dislocation superposition of the stress wave generated by the sample under two normal conditions, and the waveform is related to the physical properties on both sides of the interface and the acoustic resistance at the interface. The reason for this phenomenon is that space charges will accumulate on both sides of the interface, and the stress wave generated by its vibration will interfere with the original stress wave. In addition, the acoustic resistance at the interface will also make the stress wave attenuate and disperse in the propagation process, resulting in the distortion of time-domain waveform. The spectrum analysis results show that the frequency domain components of stress waves are mainly concentrated in the range of 0~20MHz. In the case of interface, the frequency spectrum of stress wave will produce additional peaks at high frequencies, its position and amplitude are related to the interface conditions. The experimental results of aging samples show that with the increase of aging degree, the frequency domain component of stress wave gradually concentrates to the low frequency range. The reason is due to the internal structure changes of material molecules. The interaction force between molecules can be regarded as elastic force, and its vibration frequency is affected by the degree of coupling between molecules. The stronger the coupling, the greater the vibration frequency. In the aging state, due to the destruction of the molecular structure, the degree of coupling between them decreases, which leads to the reduction of the molecular vibration frequency. Through the study of the stress wave generated by the sample under the interface and aging defects, the following conclusions can be drawn: ①Defects in power electronic devices lead to changes in the internal structure, which result in changes in the stress wave parameters. ②The influence of interface defects on stress wave is mainly reflected in the generation mechanism and propagation. The existence of the interface will distort the time-domain waveform of the stress wave and produce new spectral peaks at high frequencies. ③Aging defects reduce the coupling degree between molecules, which leads to the increase of the low-frequency component and the decrease of the high-frequency component of the stress wave generated by molecular vibration. This phenomenon becomes more obvious with the increase of the aging degree of the sample.
何东欣, 魏君宇, 王婉君, 徐喆, 李清泉. 界面缺陷及老化状态下电力电子器件封装绝缘应力波检测与分析[J]. 电工技术学报, 2023, 38(3): 610-621.
He Dongxin, Wei Junyu, Wang Wanjun, Xu Zhe, Li Qingquan. Detection and Analysis of Stress Wave in Power Electronic Device Packaging Insulation under Interface Defects and Aging Conditions. Transactions of China Electrotechnical Society, 2023, 38(3): 610-621.
[1] 张逸成, 叶尚斌, 张佳佳, 等. 电力电子设备传导噪声抑制措施研究综述[J]. 电工技术学报, 2017, 32(14): 77-86. Zhang Yicheng, Ye Shangbin, Zhang Jiajia, et al.Review of conducted noise suppression method for power electronic and electrical equipment[J]. Transactions of China Electrotechnical Society, 2017, 32(14): 77-86. [2] 蔡旭, 杨仁炘, 周剑桥, 等. 海上风电直流送出与并网技术综述[J]. 电力系统自动化, 2021, 45(21): 2-22. Cai Xu, Yang Renxin, Zhou Jianqiao, et al.Review on offshore wind power integration via DC transmission[J]. Automation of Electric Power Systems, 2021, 45(21): 2-22. [3] 王学梅, 张波, 吴海平. 基于失效物理的功率器件疲劳失效机理[J]. 电工技术学报, 2019, 34(4): 717-727. Wang Xuemei, Zhang Bo, Wu Haiping.A review of fatigue mechanism of power devices based on physics-of-failure[J]. Transactions of China Electrotechnical Society, 2019, 34(4): 717-727. [4] Choi U M, Blaabjerg F, Lee K B.Study and handling methods of power igbt module failures in power electronic converter systems[J]. IEEE Transactions on Power Electronics, 2015, 30(5): 2517-2533. [5] 何东欣, 张涛, 陈晓光, 等. 脉冲电压下电力电子装备绝缘电荷特性研究综述[J]. 电工技术学报, 2021, 36(22): 4795-4808. He Dongxin, Zhang Tao, Chen Xiaoguang, et al.Research overview on charge characteristics of power electronic equipment insulation under the pulse voltage[J]. Transactions of China Electrotechnical Society, 2021, 36(22): 4795-4808. [6] 汪波, 罗毅飞, 张烁, 等. IGBT极限功耗与热失效机理分析[J]. 电工技术学报, 2016, 31(12): 135-141. Wang Bo, Luo Yifei, Zhang Shuo, et al.Analysis of limiting power dissipation and thermal failure mechanism[J]. Transactions of China Electrotecnical Society, 2016, 31(12): 135-141. [7] 彭英舟, 周雒维, 张晏铭, 等. 基于键合线等效电阻的 IGBT 模块老化失效研究[J]. 电工技术学报, 2017, 32(20): 117-132. Peng Yingzhou, Zhou Luowei, Zhang Yanming, et al.Study of IGBT module aging failure base on bond wire equivalent resistance[J]. Transactions of China Electrotechnical Society, 2017, 32(20): 117-132. [8] 李武华, 陈玉香, 罗皓泽, 等. 大容量电力电子器件结温提取原理综述及展望[J]. 中国电机工程学报, 2016, 36(13): 3546-3557. Li Wuhua, Chen Yuxiang, Luo Haoze, et al.Review and prospect of junction temperature extraction principle of high power semiconductor devices[J]. Proceedings of the CSEE, 2016, 36(13): 3546-3557. [9] 李辉, 胡玉, 王坤, 等. 考虑杂散电感影响的风电变流器 IGBT 功率模块动态结温计算及热分布[J]. 电工技术学报, 2019, 34(20): 4242-4250. Li Hui, Hu Yu, Wang Kun, et al.Thermal distribution and dynamic junction temperature calculation of IGBT power modules for wind turbine converters considering the influence of stray inductances[J]. Transactions of China Electrotechnical Society, 2019, 34(20): 4242-4250. [10] 吴海富, 张建忠, 张进, 等. SiC MOSFET 短路检测与保护研究综述[J]. 电工技术学报, 2019, 34(21): 4519-4528. Wu Haifu, Zhang Jianzhong, Zhao Jin, et al.Review of short-circuit detection and protection of silicon carbide MOSFETs[J]. Transactions of China Electrotechnical Society, 2019, 34(21): 4519-4528. [11] 姚芳, 胡洋, 李铮, 等. 基于结温监测的风电 IGBT 热安全性和寿命耗损研究[J]. 电工技术学报, 2018, 33(9): 2024-2033. Yao Fang, Hu Yang, Li Zheng, et al.Study on thermal safety and lifetime consumption of IGBT in wind power converters based on junction temperature monitoring[J]. Transactions of China Electrotechnical Society, 2018, 33(9): 2024-2033. [12] 姚陈果, 李孟杰, 余亮, 等. 基于脉冲耦合响应的IGBT故障检测方法[J]. 电工技术学报, 2020, 35(15): 3235-3244. Yao Chenguo, Li Mengjie, Yu Liang, et al.A condition detecting method for the IGBT module based on pulse coupling response[J]. Transactions of China Electrotechnical Society, 2020, 35(15): 3235-3244. [13] 赵子轩, 陈杰, 邓二平, 等. 负载电流对IGBT器件中键合线的寿命影响和机理分析[J]. 电工技术学报, 2022, 37(01): 244-253. Zhao Zixuan, Chen Jie, Deng Erping, et al.The influence and failure mechanism analysis of the load current on the IGBT lifetime with bond wire failure[J]. Transactions of China Electrotechnical Society, 2022, 37(01): 244-253. [14] Brown D W, Abbas M, Ginart A, et al.Turn-off time as an early indicator of insulated gate bipolar transistor latch-up[J]. IEEE Transactions on Power Electronics, 2012, 27(2): 479-489. [15] Liu Jingcun, Zhang Guogang, Chen Qian, et al.In situ condition monitoring of IGBTs based on the miller plateau duration[J]. IEEE Transactions on Power Electronics, 2019, 34(1). 769-782. [16] 王磊, 李兵, 董超跃, 等. 城轨牵引变流器功率开关器件的双向加速老化测试与在线损伤预测[J]. 电工技术学报, 2019, 34(增刊1): 224-234. Wang Lei, Li Bing, Dong Chaoyue, et al.Bidirectional accelerated aging test and online damage prediction of power switch devices in urban traction converter[J]. Transactions of China Electrotecnical Society, 2019, 34(S1): 224-234. [17] 万萌, 应展烽, 张伟. 分立型功率MOSFET结温估计的非线性热网络模型和参数辨识方法[J]. 电工技术学报, 2019, 34(12): 2477-2488. Wan Meng, Ying Zhanfeng, Zhang Wei.Nonlinear thermal network model and parameter identification method for junction temperature estimation of discrete power MOSFET[J]. Transactions of China Electro-technical Society, 2019, 34(12): 2477-2488. [18] 丁雪妮, 陈民铀, 赖伟, 等. 多芯片并联IGBT模块老化特征参量甄选研究[J]. 电工技术学报, 2022, 37(13): 3304-3316, 3340. Ding Xueni, Chen Minyou, Lai Wei, et al.Selection of aging characteristic parameter for multi-chips parallel IGBT module[J]. Transactions of China Electrotechnical Society, 2022, 37(13): 3304-3316, 3340. [19] 李孟川, 孟志强, 胡毅, 等. 电力电子器件机械应力波的试验研究[J]. 湖南大学学报(自然科学版), 2019, 46(4): 74-79. Li Mengchuan, Meng Zhiqiang, Hu Yi, et al.Experimental study of mechanical stress wave in power electronics device[J]. Journal of Hunan University (Natural Sciences), 2019, 46(4): 74-79. [20] 李孟川, 何赟泽, 孟志强, 等. 基于声发射检测技术的电力电子器件/模块机械应力波综述[J]. 电工技术学报, 2021, 36(22): 4773-4783. Li Mengchuan, He Yunze, Meng Zhiqiang, et al.An overview of mechanical stress wave in power electronics device/module based on acoustic emission testing technology[J]. Transactions of China Electrotechnical Society, 2021, 36(22): 4773-4783. [21] Karkkainen T J, Talvitie J P, Kuisma M, et al.Acoustic emission in power semiconductor modules-first observations[J]. IEEE Transactions on Power Electronics, 2014, 29(11): 6081-6086. [22] Kozak M, Gordon R.Experimental investigations of monolithic IGBT transistor acoustic emission phenomena[J]. Poznan University of Technology Academic Journals, 2019, 99: 19-28. [23] Müller S, Drechsler C, Heinkel U, et al.Acoustic emission for state-of-health determination in power modules[C]//13th International Multi-Conference on Systems, Signals & Devices (SSD), Leipzig, 2016: 468-471. [24] 何赟泽, 邹翔, 李孟川, 等. 30V条件下功率MOSFET器件应力波理论与试验研究[J]. 中国电机工程学报, 2021, 41(16): 5683-5693. He Yunze, Zou Xiang, Li Mengchuan, et al.Theoretical and experimental study on stress wave of power MOSFET under 30 volts[J]. Proceedings of the CSEE, 2021, 41(16): 5683-5693. [25] Li Mengchuan, He Yunze, Meng Zhiqiang, et al.Acoustic emission based experimental analysis of mechanical stress wave in IGBT device[J]. IEEE Sensors Journal, 2020, 20(11): 6064-6074. [26] Bai Yun, Shen Haoning, He Yunze, et al.Analysis of the stress-wave influence parameters of silicon MOSFET under 300V drain source voltage[J]. IEEE Sensors Journal, 2021, 21(18): 20107-20118. [27] Karkkainen T J, Talvitie J P, Kuisma M, et al.Acoustic emission caused by the failure of a power transistor[C]// 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), Charlotte, 2015: 2481-2484. [28] Zhang Tao, He Dongxin, Wei Junyu, et al.Charge vibration behaviour in polyimide under the pulse voltage with different rise and fall times[J]. High Voltage, 2022, 7(1): 64-74. [29] 张崇兴, 吴文杰, 谢佳成, 等. 中压变换器关键部件绝缘设计与评估方法研究[J]. 高电压技术, 2020, 46(10): 3407-3417. Zhang Chongxing, Wu Wenjie, Xie Jiacheng, et al.Insulation design and assessment of critical components in MV power converter[J]. High Voltage Engineering, 2020, 46(10): 3407-3417. [30] Li Y, Yasuda M, Takada T, et al.Pulsed electroacoustic method for measurement of charge accumulation in solid dielectrics[J]. IEEE Transactions on Dielectrics and Electrical Insulation, 1994, 1(2): 188-195. [31] Geng Xuefeng, He Yunze, Zeng Chenghao, et al.Analysis of influence parameters of stress wave at the turn-off moment in IGBT device based on differential AE sensor[J]. IEEE Sensors Journal, 2022, 22(3): 2259-2270. [32] 王莉娜, 邓洁, 杨军一, 等. Si和SiC功率器件结温提取技术现状及展望[J]. 电工技术学报, 2019, 34(4): 703-716. Wang Lina, Zheng Jie, Yang Junyi, et al.Junction temperature extraction methods for Si and SiC power devices—a review and possible alternatives[J]. Transactions of China Electrotechnical Society, 2019, 34(04): 703-716. [33] 李亚萍, 周雒维, 孙鹏菊, 等. 基于特定集电极电流下饱和压降的IGBT模块老化失效状态监测方法[J]. 电工技术学报, 2018, 33(14): 3202-3212. Li Yaping, Zhou Luowei, Sun Pengju, et al.Condition monitoring for IGBT module aging failure on VCE(on) under certain IC conditions[J]. Transactions of China Electrotechnical Society, 2018, 33(14): 3202-3212. [34] 惠苏新, 王鹏, 吴琦, 等. 重复脉冲占空比对环氧树脂电树生长特性影响研究[J]. 中国电机工程学报, 2020, 40(16): 5383-5392. Hui Suxin, Wang Peng, Wu Qi, et al.Study of the influence of repetitive impulse voltage duty cycle on the treeing characteristics of epoxy resin[J]. Proceedings of the CSEE, 2020, 40(16): 5383-5392. [35] 佟辉, 臧丽坤, 徐菊. 导热绝缘材料在电力电子器件封装中的应用[J]. 绝缘材料, 2021, 54(12): 1-9. Tong Hui, Zang Likun, Xu Ju.Application of thermally conductive insulating materials in power electronics packaging[J]. Insulating Materials, 2021, 54(12): 1-9. [36] Van de Wal B J, Kendall G, Sammakia B, et al. Acoustic emission analysis for fatigue prediction of lap solder joints in mode two shear[J]. International Journal of Damage Mechanics, 2001, 10(3): 256-276. [37] 王浩宇, 赵志斌, 付鹏宇, 等. 压接型IGBT器件封装结构中PEEK框架的绝缘特性分析[J]. 绝缘材料, 2019, 52(6): 60-66. Wang Haoyu, Zhao Zhibin, Fu Pengyu, et al.Insulating properties of PEEK frame in pressed IGBT device[J]. Insulating Materials, 2019, 52(6): 60-66. [38] Wang Peng, Hui Suxin, Akram S, et al.Influence of repetitive square voltage duty cycle on the electrical tree characteristics of epoxy resin[J]. Polymers, 2020, 12(10): 2215. [39] Khazaka R, Locatelli M L, Diaham S, et al.Effects of mechanical stresses, thickness and atmosphere on aging of polyimide thin films at high temperature[J]. Polymer Degradation and Stability, 2013, 98(1): 361-367. [40] 李洁, 赖伟, 汪纪锋, 等. IGBT的加速老化试验方法研究[J]. 电力电子技术, 2018, 52(8): 73-76. Li Jie, Lai Wei, Wang Jifeng, et al.Study on accelerated ageing methods for IGBT[J], Power Electronics, 2018, 52(8): 73-76.
2023, Vol. 38 
