Review on Short-Circuit Protection Technology of SiC MOSFET
Wen Yang1, Yang Yuan1, Ning Hongying1, Zhang Yu2, Gao Yong1
1. College of Automation and Information Engineering Xi'an University of Technology Xi'an 710048 China; 2. College of Technology Xi'an Siyuan University Xi'an 710038 China
Abstract：With the development of power electronics technology, SiC MOSFETs show significant advantages in power electronics applications of high frequency, high voltage and high temperature due to its excellent material properties. However, the high switching speed and poor short-circuit withstand capability of SiC MOSFETs bring new challenges to short-circuit protection technology. In this paper, different short-circuit fault types and testing methods of SiC MOSFETs are introduced firstly. Secondly, the short-circuit failure mode and mechanism of SiC MOSFET are analyzed. On this basis, the principle, advantages and disadvantages of the existing short-circuit detection and turn-off technology of SiC MOSFETs are summarized in detail, and the problems and challenges in the application of the current short-circuit protection technology of SiC MOSFETs are discussed. Finally, the development trend of SiC MOSFET short-circuit protection technology is prospected.
文阳, 杨媛, 宁红英, 张瑜, 高勇. SiC MOSFET短路保护技术综述[J]. 电工技术学报, 2022, 37(10): 2538-2548.
Wen Yang, Yang Yuan, Ning Hongying, Zhang Yu, Gao Yong. Review on Short-Circuit Protection Technology of SiC MOSFET. Transactions of China Electrotechnical Society, 2022, 37(10): 2538-2548.
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