Abstract：In order to precisely test the switching performance of high speed SiC MOSFET, this paper will focus on the precise test method in the double pulse test platform. The effects of the parasitic inductors on the switching performance are illustrated by simulation, and the PCB layout is optimized to reduce the parasitic inductors. The tested results of two PCB layouts are compared. The effects of the parasitic capacitors in the flywheel diode and the load inductor on the turn-on switching performance are presented. The tested results by different passive voltage probes, different grounding connecting ways and different current test equipment are compared. The impacts of the phase delay on the turn-on and turn-off switching loss are presented. At last, the proper test points are shown clearly in this paper.
梁美, 李艳, 郑琼林, 赵红雁. 高速SiC MOSFET开关特性的测试方法[J]. 电工技术学报, 2017, 32(14): 87-95.
Liang Mei, Li Yan, Zheng Trillion Q, Zhao Hongyan. Test Method for Switching Performance of High Speed SiC MOSFET. Transactions of China Electrotechnical Society, 2017, 32(14): 87-95.
[1] Liang Z, Ning P, Wang F. Development of advanced all-SiC power modules[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2289-2295. [2] 祁锋, 徐隆亚, 王江波, 等. 一种为碳化硅MOSFET设计的高温驱动电路[J]. 电工技术学报, 2015, 30(23): 24-31. Qi Feng, Xu Longya, Wang Jiangbo, et al. A high temperature gate drive circuit for SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2015, 30(23): 24-31. [3] 陈思哲, 盛况. 4700V碳化硅PiN整流二极管[J]. 电工技术学报, 2015, 30(22): 57-61. Chen Sizhe, Sheng Kuang. 4700V SiC PiN rectifier[J]. Transactions of China Electrotechnical Society, 2015, 30(22): 57-61. [4] 梁美, 郑琼林, 可翀, 等. SiC MOSFET, Si CoolMOS和IGBT的特性对比及其在DAB变换器中的应用[J]. 电工技术学报, 2015, 30(12): 41-50. Liang Mei, Zheng Trillion Q, Ke Chong, et al. Performance comparison of SiC MOSFET, Si Cool- MOS and IGBT for DAB converter[J]. Transactions of China Electrotechnical Society, 2015, 30(12): 41-50. [5] Zhang Z, Wang F, Tolbert L M, et al. Evaluation of switching performance of SiC devices in PWM inverter-fed induction motor drives[J]. IEEE Transa- ctions on Power Electronics, 2015, 30(10): 5701-5711. [6] Fabre J, Ladoux P, Piton M. Characterization and implementation of dual-SiC MOSFET modules for future use in traction converters[J]. IEEE Transa- ctions on Power Electronics, 2014, 30(8): 4079-4090. [7] Koiwa K, Itoh J I. A maximum power density design method for nine-switch matrix converter using SiC- MOSFET[J]. IEEE Transactions on Power Elec- tronics, 2015, 31(2): 1189-1202. [8] Ho C N M, Breuninger H, Pettersson S, et al. A comparative performance study of an interleaved boost converter using commercialized Si and SiC diodes for PV applications[J]. IEEE Transactions on Power Electronics, 2013, 28(1): 289-299. [9] Palmour J W. Silicon carbide power device deve- lopment for industrial markets[C]//IEEE International Electron Devices Meeting, San Francisco, 2014: 1.1.1-1.1.8. [10] Hazra S, De A, Cheng L, et al. High switching perfor- mance of 1700V, 50A SiC power MOSFET over Si IGBT/BiMOSFET for advanced power conversion applications[J]. IEEE Transactions on Power Elec- tronics, 2016, 31(7): 4742-4754. [11] Huang X, Li Q, Liu Z, et al. Analytical loss model of high voltage GaN HEMT in cascode configuration[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2208-2219. [12] Zhang Z, Guo B, Wang F, et al. Methodology for switching characterization evaluation of wide band-gap devices in a phase-leg configuration[C]// IEEE Applied Power Electronics Conference and Exposition, Fort Worth, 2014: 2534-2541. [13] Zhang Z, Wang. Driving and characterization of wide bandgap semiconductors for voltage source converter applications[C]//Wide Bandgap Power Devices and Applications, Knoxville, 2014: 1-84. [14] Wang J, Chung S H. A novel RCD level shifter for elimination of spurious turn-on in the bridge-leg configuration[J]. IEEE Transactions on Power Electronics, 2015, 30(2): 976-984. [15] Tektronix Inc.: ABCs of probes—primer., Applicat. Note, 2005.[Z/OL] http://www.tektronix. com. [16] Transphorm Inc.: Printed circuit board layout and probing for GaN power switches—Zan Huang, Felix Recht and Yifeng Wu, Applicat. Note AN-0003, 2016.[Z/OL] http://www.transphormusa. com/. [17] Li H, Beczkowski S, Munk-Nielsen S, et al. Current measurement method for characterization of fast switching power semiconductors with Silicon steel current transformer[C]//IEEE Applied Power Elec- tronics Conference and Exposition, Charlotte, 2015: 585-592. [18] Liu Z, Huang X, Lee F C, et al. Package parasitic inductance extraction and simulation model development for the high-voltage cascode GaN HEMT[J]. IEEE Transactions on Power Electronics, 2015, 29(4): 1977-1985. [19] Stabile A, Boccaletti C, Cardoso A J M. A power loss measurement method applied to static power converters[J]. IEEE Transactions on Instrumentation & Measurement, 2013, 62(2): 344-352. [20] Cree, Inc.: SiC MOSFET double pulse fixture, document library, 2015.[Z/OL] http://www.wolfspeed.com/. （编辑 陈 诚）
2017, Vol. 32 
