电工技术学报  2017, Vol. 32 Issue (14): 87-95    DOI: 10.19595/j.cnki.1000-6753.tces.L70526
电力电子 |
高速SiC MOSFET开关特性的测试方法
梁美, 李艳, 郑琼林, 赵红雁
北京交通大学电气工程学院 北京 100044
Test Method for Switching Performance of High Speed SiC MOSFET
Liang Mei, Li Yan, Zheng Trillion Q, Zhao Hongyan
School of Electrical Engineering Beijing Jiaotong University Beijing 100044 China
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摘要 为正确地评估高速SiC MOSFET的开关特性,基于双脉冲测试平台对精准的测试方法进行研究。首先,仿真证明电路中寄生电感对SiC MOSFET开关特性的影响,优化设计PCB布局以减小寄生电感,对比PCB布局优化前后的测试结果。其次,对比分析续流二极管的结电容以及负载电感的寄生电容对SiC MOSFET开通特性的影响。然后,对比分析使用不同带宽的非隔离电压探头、不同电压探头地线连接方式、不同电流测试设备对测试结果的影响,并说明电压与电流波形之间相位延迟对开关能量损耗的影响。最后,对比分析不同测试点对测试结果的影响。
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梁美
李艳
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赵红雁
关键词 测试方法开关特性高速SiCMOSFET寄生参数    
Abstract:In order to precisely test the switching performance of high speed SiC MOSFET, this paper will focus on the precise test method in the double pulse test platform. The effects of the parasitic inductors on the switching performance are illustrated by simulation, and the PCB layout is optimized to reduce the parasitic inductors. The tested results of two PCB layouts are compared. The effects of the parasitic capacitors in the flywheel diode and the load inductor on the turn-on switching performance are presented. The tested results by different passive voltage probes, different grounding connecting ways and different current test equipment are compared. The impacts of the phase delay on the turn-on and turn-off switching loss are presented. At last, the proper test points are shown clearly in this paper.
Key wordsTest    method,    switching    performance,    high    speed    SiC    MOSFET,    parasitic    parameters   
收稿日期: 2016-08-20      出版日期: 2017-08-01
PACS: TM133  
作者简介: 梁 美 女,1988年生,博士研究生,研究方向为电力电子与电力传动、新型宽禁带器件的应用。E-mail: 12117352@bjtu.edu.cn
引用本文:   
梁美, 李艳, 郑琼林, 赵红雁. 高速SiC MOSFET开关特性的测试方法[J]. 电工技术学报, 2017, 32(14): 87-95. Liang Mei, Li Yan, Zheng Trillion Q, Zhao Hongyan. Test Method for Switching Performance of High Speed SiC MOSFET. Transactions of China Electrotechnical Society, 2017, 32(14): 87-95.
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