Abstract：In order to analyze the effect of parasitic parameters on the gate-source voltage of SiC MOSFET in the switching transient process,the model of SiC MOSFET turn-on and turn-off process is established based on the synchronous Buck converter in this paper.The effect of parasitic parameters is verified through comparing the experimental measurements with the simulation results,and is also analyzed in this paper.
巴腾飞,李艳,梁美. 寄生参数对SiC MOSFET栅源极电压影响的研究[J]. 电工技术学报, 2016, 31(13): 64-73.
Ba Tengfei , Li Yan ,Liang Mei. The Effect of Parasitic Parameters on Gate-Source Voltage of SiC MOSFET. Transactions of China Electrotechnical Society, 2016, 31(13): 64-73.
[1] 祁锋,徐隆亚,王江波,等.一种为碳化硅MOSFET设计的高温驱动电路[J].电工技术学报,2015,30(23):24-31. Qi Feng,Xu Longya,Wang Jiangbo,et al.A high temperature gate drive circuit for SiC MOSFET[J].Transactions of China Electrotechnical Society,2015,30(23):24-31. [2] 梁美,郑琼林,可翀,等.SiC MOSFET、Si CoolMOS和IGBT的特性对比及其在DAB变换器中的应用[J].电工技术学报,2015,30(12):41-50. Liang Mei,Zheng Qionglin,Ke Chong,et al.Performance comparison of SiC MOSFET,Si CoolMOS and IGBT for DAB converter[J].Transactions of China Electrotechnical Society,2015,30(12):41-50. [3] 陈思哲,盛况.4 700 V碳化硅PiN整流二极管[J].电工技术学报,2015,30(22):57-61. Chen Sizhe,Sheng Kuang.4 700 V SiC PiN rectifier[J].Transactions of China Electrotechnical Society,2015,30(22):57-61. [4] 任小永,David Reusch,季澍,等.氮化镓功率晶体管三电平驱动技术[J].电工技术学报,2013,28(5):202-207. Ren Xiaoyong,David Reusch,Ji Shu,et al.Three-level driving method for GaN power transistor[J].Transactions of China Electrotechnical Society,2013,28(5):202-207. [5] Fujita H.A resonant gate-drive circuit with optically-isolated control signal and power supply for fast-switching and high-voltage power semiconductor devices[J].IEEE Transactions on Power Electronics,2013,28(11):5423-5430. [6] Zhang Zheyu,Wang F,Tolbert L M,et al.A gate assist circuit for cross talk suppression of SiC devices in a phase-leg configuration[C]//IEEE Energy Conversion Congress and Exposition,Denver,CO,2013:2536-2543. [7] Zhang Zheyu,Wang F,Tolbert L M,et al.Active gate driver for crosstalk suppression of SiC devices in a phase-leg configuration[J].IEEE Transactions on Power Electronics,2014,29(4):1986-1997. [8] 何骏伟,陈思哲,任娜,等.4 500 V碳化硅SBD和JFET功率模块的制备与测试[J].电工技术学报,2015,30(17):63-69. He Junwei,Chen Sizhe,Ren Na,et al.Fabrication and testing of 4 500 V SiC SBD and JFET power modules[J].Transactions of China Electrotechnical Society,2015,30(17):63-69. [9] 张云,徐衍亮,李豹.基于动态电源的MOSFET驱动优化[J].电工技术学报,2013,28(12):269-275. Zhang Yun,Xu Yanliang,Li Bao.Research on optimization of MOSFET driving based on dynamic power source[J].Transactions of China Electrotechnical Society,2013,28(12):269-275. [10]Zhao Qun,Stojcic G.Characterization of Cdv/dt induced power loss in synchronous buck DC-DC converters[J].IEEE Transactions on Power Electronics,2007,22(4):1503-1508. [11]Xu Shen,Sun Weifeng,Sun Daying.Analysis and design optimization of brushless DC motor’s driving circuit considering the Cdv/dt induced effect[C]//IEEE Energy Conversion Congress and Exposition,Atlanta,GA,2010:2091-2095. [12]Yang B,Zhang J.Effect and utilization of common source inductance in synchronous rectification[C]//Twentieth Annual IEEE Applied Power Electronics Conference and Exposition,2005,3:1407-1411. [13]孟庆云,马伟明,孙驰,等.考虑二极管非理想特性的中点钳位三电平电路的分析[J].电工技术学报,2010,25(6):40-46. Meng Qingyun,Ma Weiming,Sun Chi,et al.The NPC three-level circuit considering nonideal characteristic of diode[J].Transactions of China Electrotechnical Society,2010,25(6):40-46. [14]李方正,徐勤富,赖建军,等.PiN二极管的一种改进型PSpice模型[J].电工技术学报,2011,26(增1):172-176. Li Fangzheng,Xu Qinfu,Lai Jianjun,et al.An improved power PiN diode model for PSpice[J].Transactions of China Electrotechnical Society,2011,26(S1):172-176. [15]Wang Jianjing,Chung Henry Shu-Hung.Impact of parasitic elements on the spurious triggering pulse in synchronous buck converter[J].IEEE Transactions on Power Electronics,2014,29(12):6672-6685. [16]孙凯,陆珏晶,吴红飞,等.碳化硅MOSFET的变温度参数建模[J].中国电机工程学报,2013,33(3):37-43. Sun Kai,Lu Juejing,Wu Hongfei,et al.Modeling of SiC MOSFET with temperature dependent parameters[J].Proceedings of the CSEE,2013,33(3):37-43. [17]Wang Jianjing,Chung Henry Shu-hung,Li River Tin-ho.Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance[J].IEEE Transactions on Power Electronics,2013,28(1):573-590.
2016, Vol. 31 
