Abstract：Due to the effects of higher switching speed and parasitic parameters, crosstalk in a phase-leg configuration of traditional Silicon Carbide (SiC) MOSFET driver is more serious, while the existing drive circuits for crosstalk suppression usually bring the disadvantages of increasing switching loss, switching delay or complex degree. Combined with the method of gate impedance control and gate voltage control for crosstalk suppression, an improved gate driver was proposed in this paper. Firstly, the cause of crosstalk phenomenon and its typical solution were described. Secondly, based on the idea of adding additional new auxiliary circuit with a triode series-connected capacitor between gate-source terminals to decrease the gate driver impedance when crosstalk occurred, an improved gate driver design method was proposed on the premise of applying a negative-biased turn-off gate voltage. The operating principle and the key parameters design rules were also studied. Finally, a double-pulse testing platform was established to verify the effectiveness of the improved gate driver under the conditions of different drive resistances, input voltages and load currents. The results show that the crosstalk phenomenon of traditional SiC MOSFET driver is obvious; compared with the typical gate driver, the proposed method can reduce the switching loss and delay.
李辉, 黄樟坚, 廖兴林, 钟懿, 王坤. 一种抑制SiC MOSFET桥臂串扰的改进门极驱动设计[J]. 电工技术学报, 2019, 34(2): 275-285.
Li Hui, Huang Zhangjian, Liao Xinglin, Zhong Yi, Wang Kun. An Improved SiC MOSFET Gate Driver Design for Crosstalk Suppression in a Phase-Leg Configuration. Transactions of China Electrotechnical Society, 2019, 34(2): 275-285.
[1] Xu Fan, Han T J, Jiang Dong, et al.Development of a SiC JFET-based six-pack power module for a fully integrated inverter[J]. IEEE Transactions on Power Electronics, 2013, 28(3): 1464-1478. [2] Liang Zhenxian, Ning Puqi, Wang Fred.Development of advanced all-SiC power modules[J]. IEEE Transa- ctions on Power Electronics, 2014, 29(5): 2289-2295. [3] Millan J, Godignon P, Perpina X, et al.A survey of wide bandgap power semiconductor devices[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2155-2163. [4] 陈思哲, 盛况. 4700V碳化硅PiN整流二极管[J]. 电工技术学报, 2015, 30(22): 57-61. Chen Sizhe, Sheng Kuang.4700V SiC PiN rectifier[J]. Transactions of China Electrotechnical Society, 2015, 30(22): 57-61. [5] 祁锋, 徐隆亚, 王江波, 等. 一种为碳化硅MOSFET设计的高温驱动电路[J]. 电工技术学报, 2015, 30(23): 24-31. Qi Feng, Xu Longya, Wang Jiangbo, et al.A high temperature gate drive circuit for SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2015, 30(23): 24-31. [6] Koiwa K, Itoh J I.A maximum power density design method for nine-switch matrix converter using SiC- MOSFET[J]. IEEE Transactions on Power Elec- tronics, 2015, 31(2): 1189-1202. [7] Hazra S, De A, Cheng L, et al.High switching performance of 1700V, 50A SiC power MOSFET over Si IGBT/BiMOSFET for advanced power conversion applications[J]. IEEE Transactions on Power Electronics, 2016, 31(7): 4742-4754. [8] Wang J, Chung S H.Impact of parasitic elements on the spurious triggering pulse in synchronous buck converter[J]. IEEE Transactions on Power Elec- tronics, 2014, 29(12): 6672-6685. [9] Jahdi S, Alatise O, Alexakis P, et al.The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs[J]. IEEE Transactions on Industrial Electronics, 2015, 62(1): 163-171. [10] 巴腾飞, 李艳, 梁美. 寄生参数对SiC MOSFET栅源极电压影响的研究[J]. 电工技术学报, 2016, 31(13): 64-73. Ba Tengfei, Li Yan, Liang Mei.The effect of parasitic parameters on gate-source voltage of SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2016, 31(13): 64-73. [11] Yin S, Tseng K J, Tong C F, et al.A 99% efficiency SiC three-phase inverter using synchronous recti- fication[C]//Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, USA, 2016: 2942-2949. [12] 梁美, 李艳, 郑琼林, 等. 桥式电路中不同封装SiC MOSFET串扰问题分析及低栅极关断阻抗的驱动电路[J]. 电工技术学报, 2017, 32(18): 162-174. Liang Mei, Li Yan, Zheng Qionglin, et al.Analysis for crosstalk of SiC MOSFET with different packages in a phase-leg configuration and a low gate turn-off impedance driver[J]. Transactions of China Electro- technical Society, 2017, 32(18): 162-174. [13] Paredes A, Sala V, Ghorbani H, et al.A novel active gate driver for silicon carbide MOSFET[C]//IECON 42nd Annual Conference of the IEEE Industrial Electronics Society, Florence, Italy, 2016: 3172-3177. [14] Ishikawa K, Ogawa K, Yukutake S, et al.Traction inverter that applies compact 3.3kV/1200A SiC hybrid module[C]//International Power Electronics Conference(IPEC), Hiroshima, Japan, 2014: 2140-2144. [15] Mo F, Furuta J, Kobayashi K.A low surge voltage and fast speed gate driver for SiC MOSFET with switched capacitor circuit[C]//Wide Bandgap Power Devices and Applications (WiPDA), Fayetteville, AR, USA, 2016: 282-285. [16] Zhang Z, Wang F, Tolbert L M, et al.Active gate driver for crosstalk suppression of SiC devices in a phase-leg configuration[J]. IEEE Transactions on Power Electronics, 2013, 29(4): 1986-1997. [17] Zushi Y, Sato S, Matsui K, et al.A novel gate assist circuit for quick and stable driving of SiC-JFETs in a 3-phase inverter[C]//Applied Power Electronics Conference and Exposition (APEC), Orlando, FL, USA, 2012: 1734-1739. [18] Zhou Qi, Gao Feng.A gate driver of SiC MOSFET for suppressing the negative voltage spikes in a bridge circuit[C]//Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, USA, 2016: 536-543. [19] Wang J, Chung S H.A novel RCD level shifter for elimination of spurious turn-on in the bridge-leg configuration[J]. IEEE Transactions on Power Electronics, 2015, 30(2): 976-984. [20] Zhang Z, Wang F, Tolbert L M, et al.Active gate driver for fast switching and cross-talk suppression of SiC devices in a phase-leg configuration[C]//Applied Power Electronics Conference and Exposition (APEC), Charlotte, NC, USA, 2015: 774-781. [21] 张旭, 陈敏, 徐德鸿. SiC MOSFET驱动电路及实验分析[J]. 电源学报, 2013, 47(3): 71-76. Zhang Xu, Chen Min, Xu Dehong.SiC MOSFET driver and experiment analysis[J]. Journal of Power Supply, 2013, 47(3): 71-76. [22] 刘仿, 肖岚. SiC MOSFET开关特性及驱动电路的设计[J]. 电力电子技术, 2016, 50(6): 101-104. Liu Fang, Xiao Lan.Switching characteristics of SiC MOSFET and design of driving circuit[J]. Power Electronics, 2016, 50(6): 101-104. [23] C2M0080120D-silicon carbide power MOSFET[OL]. http://www.wolfspeed.com/index.php/downloads/dl/ file/id/167/product/0/c2m0080120d.pdf.
2019, Vol. 34 
