Abstract：An accurate and effective SiC MOSFET device model forms the foundation for engineering circuit pre-design and analysis. Currently, most well-developed MOSFET models are based on Si. Due to the differences in their physical structures, Si-based modeling approaches are only partially suitable for SiC MOSFET modeling and often encounter convergence issues. It is noted that most manufacturers' simulation models are comparatively basic and significantly deviate from the genuine features of SiC MOSFETs. This paper proposes a high-precision SiC MOSFET simulation model described by continuous functions to improve accuracy and convergence simultaneously. Additionally, the required data for modeling can be obtained directly from the datasheet, reducing modeling complexity. A method for constructing a continuous function for SiC MOSFET static drain current is proposed based on the shape characteristics of the static characteristic curves. Sub-functions of the model are considered separately based on output and transfer characteristic curve features, and a target function for the model is obtained through mathematical methods. The continuous function model ensures the convergence of the model. Traditional parasitic capacitance fitting functions are improved to address significant slope variations in the transfer capacitance curve that are difficult to fit. An equivalent circuit model for parasitic capacitance with a convergence resistor is proposed. Parameterization is applied to the diode model current source expression, considering temperature and gate-source negative voltage. All these model parameter extraction methods are based on the Levenberg-Marquardt algorithm and a general global optimization method. In addition, accurate extraction of the SiC MOSFET datasheet’s operating curves is required. Comparisons with the operating curves in the datasheet verify the accuracy of the static model. Experimental results from a 300 V/30 A dual-pulse test for C2M0025120D at different operating temperatures (25℃ and 150℃) confirm the consistency between the dynamic model and the actual dynamic characteristics. Furthermore, the developed model is successfully applied in a cascaded H-bridge seven-level inverter using PSpice simulation, confirming the model’s convergence. In conclusion, the following findings can be drawn: (1) The model obtained through the proposed static modeling method can accurately describe the actual static characteristics of SiC MOSFET devices. The Pearson correlation coefficient for the static model exceeds 0.99. (2) Introducing the convergence resistor in the parasitic capacitance model effectively improves the model’s convergence. (3) The improved transfer capacitance fitting function can accurately describe the transfer capacitance characteristics, reducing fitting errors. The Pearson correlation coefficient of the fitting is 0.988 7. (4) The body diode model considering junction temperature and gate-source negative voltage can enhance model accuracy and applicability. (5) The turn-on errors of the drain-source voltage and drain current are approximately 3%, while the gate-source voltage error is around 8%.
谭亚雄, 张梦洋, 刘元, 吴建发. 一种连续函数描述的高精度SiC MOSFET模型[J]. 电工技术学报, 2024, 39(18): 5719-5731.
Tan Yaxiong, Zhang Mengyang, Liu Yuan, Wu Jianfa. A High-Precision SiC MOSFET Model with Continuous Function Description. Transactions of China Electrotechnical Society, 2024, 39(18): 5719-5731.
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2024, Vol. 39 
