Active Control and Optimization Strategy of Junction Temperature for Power Devices
Hu Zhen1,2, Cui Man3, Wu Xiaohua1, Shi Tao1
1. College of Automation & College of artificial Intelligence Nanjing University of Posts and Telecommunications Nanjing 210042 China; 2. Suzhou Di’ao Elevator Co. Ltd Suzhou 215200 China; 3. School of Information and Electronics Beijing Institute of Technology Beijing 100081 China
Abstract：As the core component of the power conversion system, the insulated gate bipolar transistor (IGBT) has been widely used in electric vehicles, aircraft, renewable energy power generation systems, and high-speed railways. Due to the changeable work environment and complex operating conditions, the IGBT module produces a great junction temperature fluctuation during operation, resulting in thermal-mechanical stress in the device. The continuous action of stress will cause degradation of the device, and eventually cause reliability problems of the power conversion system. Studies have shown that power device failures cause more than 30% of power conversion system failures. Moreover, more than 60% of device failures are attributed to the junction temperature fluctuations. Therefore, from the reliability view, the temperature management of power devices has become a significant way to improve the reliability of power conversion systems. The temperature management methods consist of two categories: the dynamic-cooling method and the electrical-parameter method. The dynamic cooling method realizes the temperature control through the active adjustment of the cooling system, and the electrical-parameter method realizes the active configuration of the junction temperature by controlling the parameters related to the device's power loss. However, the current two methods pay more attention to making the device's junction temperature not exceed the safety threshold under full load, while cannot accurately control the junction temperature fluctuation according to the application situation or the demand value. As a result, it is difficult to realize the fine thermal management of the device, which is unfavorable to the application scenario of high reliability. Therefore, an active control strategy of the power device's junction temperature based on finite time boundness theory is proposed in this paper to achieve more accurate control of junction temperature fluctuation. This aim is to reduce the amplitude of junction temperature fluctuation during the operation. Accordingly, the thermal stress caused by the temperature fluctuations decreases. The reliability of power devices is improved by reducing the thermal damage caused by thermal stress. Firstly, the state-space model of the power devices is established based on the Foster thermal network model to achieve real-time estimation of the junction temperature state of devices, and the model parameters are identified based on the finite element analysis method. Secondly, the feedback controller based on the finite time boundness theory for junction temperature management is designed. Considering the junction temperature requirements under different working conditions, the device's switching frequency is selected as the electrical parameter to manage the junction temperature fluctuation and reduce the thermal effect of temperature fluctuations on the device. The simulation and experimental results show that the estimation error of junction temperature by the state-space model is about 2%, and the difference between the junction temperature control result and the set value is about 1.7%, indicating that the proposed method has high precision in estimation and control of junction temperature.
胡震, 崔曼, 吴晓华, 施涛. 功率器件结温主动控制及优化策略[J]. 电工技术学报, 2024, 39(18): 5732-5741.
Hu Zhen, Cui Man, Wu Xiaohua, Shi Tao. Active Control and Optimization Strategy of Junction Temperature for Power Devices. Transactions of China Electrotechnical Society, 2024, 39(18): 5732-5741.
[1] Ji Bing, Pickert V, Cao Wenping, et al.In situ diagnostics and prognostics of wire bonding faults in IGBT modules for electric vehicle drives[J]. IEEE Transactions on Power Electronics, 2013, 28(12): 5568-5577. [2] Cao Wenping, Mecrow B C, Atkinson G J, et al.Overview of electric motor technologies used for more electric aircraft (MEA)[J]. IEEE Transactions on Industrial Electronics, 2012, 59(9): 3523-3531. [3] Senturk O S, Helle L, Munk-Nielsen S, et al.Power capability investigation based on electrothermal models of press-pack IGBT three-level NPC and ANPC VSCs for multimegawatt wind turbines[J]. IEEE Transactions on Power Electronics, 2012, 27(7): 3195-3206. [4] Gong Xun, Ferreira J A.Comparison and reduction of conducted EMI in SiC JFET and Si IGBT-based motor drives[J]. IEEE Transactions on Power Electronics, 2014, 29(4): 1757-1767. [5] Luo Haoze, Chen Yuxiang, Sun Pengfei, et al.Junction temperature extraction approach with turn-off delay time for high-voltage high-power IGBT modules[J]. IEEE Transactions on Power Electronics, 2016, 31(7): 5122-5132. [6] 魏云海, 陈民铀, 赖伟, 等. 基于IGBT结温波动平滑控制的主动热管理方法综述[J]. 电工技术学报, 2022, 37(6): 1415-1430. Wei Yunhai, Chen Minyou, Lai Wei, et al.Review on active thermal control methods based on junction temperature swing smooth control of IGBTs[J]. Transactions of China Electrotechnical Society, 2022, 37(6): 1415-1430. [7] 范迦羽, 郑飞麟, 王耀华, 等. 计及热阻与发射极电感匹配的并联IGBT芯片稳态结温均衡方法[J]. 电工技术学报, 2022, 37(12): 3028-3037. Fan Jiayu, Zheng Feilin, Wang Yaohua, et al.Steady temperature equalization method for the parallel IGBTs considering the thermal resistance and the matching emitter parasitic inductance[J]. Transactions of China Electrotechnical Society, 2022, 37(12): 3028-3037. [8] Wang Huai, Liserre M, Blaabjerg F, et al.Transitioning to physics-of-failure as a reliability driver in power electronics[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2014, 2(1): 97-114. [9] Choi U M, Blaabjerg F, Lee K B.Study and handling methods of power IGBT module failures in power electronic converter systems[J]. IEEE Transactions on Power Electronics, 2015, 30(5): 2517-2533. [10] 李辉, 刘人宽, 王晓, 等. 压接型IGBT器件封装退化监测方法综述[J]. 电工技术学报, 2021, 36(12): 2505-2521. Li Hui, Liu Renkuan, Wang Xiao, et al.Review on package degradation monitoring methods of press-pack IGBT modules[J]. Transactions of China Electrotechnical Society, 2021, 36(12): 2505-2521. [11] 张军, 张犁, 成瑜. IGBT模块寿命评估研究综述[J]. 电工技术学报, 2021, 36(12): 2560-2575. Zhang Jun, Zhang Li, Cheng Yu.Review of the lifetime evaluation for the IGBT module[J]. Transactions of China Electrotechnical Society, 2021, 36(12): 2560-2575. [12] Eleffendi M A, Johnson C M.Application of Kalman filter to estimate junction temperature in IGBT power modules[J]. IEEE Transactions on Power Electronics, 2016, 31(2): 1576-1587. [13] Xu Zhuxian, Xu Fan, Wang Fei.Junction temperature measurement of IGBTs using short-circuit current as a temperature-sensitive electrical parameter for converter prototype evaluation[J]. IEEE Transactions on Industrial Electronics, 2015, 62(6): 3419-3429. [14] 杨舒萌, 孙鹏菊, 王凯宏, 等. 恒流驱动下基于VeE_max的IGBT模块解耦老化影响的结温测量方法[J]. 电工技术学报, 2022, 37(12): 3038-3047, 3072. Yang Shumeng, Sun Pengju, Wang Kaihong, et al.Junction temperature measurement method of IGBT modules based on VeE_max under constant-current source drive which decouples fatigue effect[J]. Transactions of China Electrotechnical Society, 2022, 37(12): 3038-3047, 3072. [15] 张玉斌, 温英科, 阮琳. 全浸式蒸发冷却IGBT电热耦合模型研究[J]. 电工技术学报, 2022, 37(15): 3845-3856. Zhang Yubin, Wen Yingke, Ruan Lin.Research on electrothermal coupling model of fully-immersed evaporative cooling IGBT[J]. Transactions of China Electrotechnical Society, 2022, 37(15): 3845-3856. [16] Wang Xiang, Castellazzi A, Zanchetta P.Observer based temperature control for reduced thermal cycling in power electronic cooling[J]. Applied Thermal Engineering, 2014, 64(1/2): 10-18. [17] Wei Lixiang, McGuire J, Lukaszewski R A. Analysis of PWM frequency control to improve the lifetime of PWM inverter[J]. IEEE Transactions on Industry Applications, 2011, 47(2): 922-929. [18] Ma Ke, Liserre M, Blaabjerg F.Reactive power influence on the thermal cycling of multi-MW wind power inverter[J]. IEEE Transactions on Industry Applications, 2013, 49(2): 922-930. [19] Amato F, Ariola M, Dorato P.Finite-time control of linear systems subject to parametric uncertainties and disturbances[J]. Automatica, 2001, 37(9): 1459-1463. [20] Amato F, Ariola M.Finite-time control of discrete-time linear systems[J]. IEEE Transactions on Automatic Control, 2005, 50(5): 724-729. [21] Amato F, Ariola M, Cosentino C.Finite-time stabilization via dynamic output feedback[J]. Automatica, 2006, 42(2): 337-342. [22] Amato F, Ariola M, Cosentino C.Finite-time control of discrete-time linear systems: analysis and design conditions[J]. Automatica, 2010, 46(5): 919-924. [23] Andresen M, Ma Ke, Buticchi G, et al.Junction temperature control for more reliable power electro- nics[J]. IEEE Transactions on Power Electronics, 2018, 33(1): 765-776.
2024, Vol. 39 
