Reactive Voltage Optimization Control Strategy for High Penetration Photovoltaic Distribution Network Considering IGBT Junction Temperature Constraint
Zhang Bo1, Gao Yuan1, Li Tiecheng2, Hu Xuekai2, Jia Jiaoxin1
1. Key Laboratory of Distributed Energy Storage and Microgrid of Hebei Province North China Electric Power University Baoding 071003 China; 2. State Grid Hebei Electric Power Research Institute Shijiazhuang 050021 China
Abstract：The participation of photovoltaic inverters in reactive voltage regulation of the distribution network is an effective method to improve the economy and reliability of photovoltaic high-permeability distribution network operation. However, the reactive power support provided by photovoltaic inverters will increase the maximum junction temperature of IGBT in photovoltaic inverters and increase the fluctuation of junction temperature, which will affect the safe and stable operation of photovoltaic inverters and distribution network. Therefore, the influence of reactive power output of photovoltaic power supply on the operation reliability and lifetime of photovoltaic inverter should be considered when reactive power and voltage control is carried out. Firstly, this paper proposes an IGBT reliability evaluation method based on CatBoost algorithm. This method uses data-driven method to calculate IGBT junction temperature, which shortens the calculation time of IGBT junction temperature and reduces the dependence of junction temperature calculation results on IGBT thermal model parameters. Secondly, the reactive power and voltage optimization control strategy of active distribution network considering IGBT junction temperature constraint is proposed. The IGBT junction temperature constraint is introduced into the reactive power and voltage optimization constraint of distribution network, and the multi-objective reactive power optimization model of active distribution network considering IGBT junction temperature constraint is established. Finally, considering the distribution network loss, IGBT reliability and lifetime, the IGBT junction temperature limit setting principle of photovoltaic power supply is proposed. The effectiveness of the proposed strategy in reactive power and voltage optimization and operation reliability improvement of PV power supply is verified by IEEE 33-bus typical distribution system. According to the reliability evaluation process of photovoltaic power supply based on mission profile, the IGBT failure rate of photovoltaic power supply in all access points is significantly reduced compared with that without junction temperature limit, which verifies the effectiveness of the proposed strategy in improving the operation reliability of photovoltaic power supply. At the same time, when the IGBT junction temperature limits are 80°C, 70℃ and 60℃, the corresponding minimum lifetime of all photovoltaic power IGBTs are 8, 16 and 41 years, respectively, and the average lifetime of all photovoltaic power IGBTs are 14, 25 and 65 years, respectively. It can be seen that the junction temperature limit control can improve the minimum lifetime and average lifetime of all photovoltaic power IGBTs. Considering all access point photovoltaic power IGBT minimum lifetime and distribution network loss, in this paper, the example set 60℃ junction temperature limit, can meet the IGBT replacement cycle requirements, and can ensure that the total loss of distribution network is not high. The following conclusions can be drawn from the simulation analysis: (1) The IGBT junction temperature is calculated by data-driven method, which improves the calculation efficiency of IGBT junction temperature, reduces the dependence of junction temperature calculation results on IGBT thermal model parameters. (2) The reactive power optimization model is transformed into a second-order cone programming model by linearization and second-order cone relaxation, which improves the speed of model solution. (3) The setting principle of IGBT junction temperature limit considering the total loss of distribution network and IGBT reliability is proposed, which provides a theoretical basis for photovoltaic power supply to participate in the design of reactive voltage regulation control strategy and core parameter setting of distribution network.
张波, 高远, 李铁成, 胡雪凯, 贾焦心. 计及IGBT结温约束的光伏高渗透配电网无功电压优化控制策略[J]. 电工技术学报, 2024, 39(5): 1313-1326.
Zhang Bo, Gao Yuan, Li Tiecheng, Hu Xuekai, Jia Jiaoxin. Reactive Voltage Optimization Control Strategy for High Penetration Photovoltaic Distribution Network Considering IGBT Junction Temperature Constraint. Transactions of China Electrotechnical Society, 2024, 39(5): 1313-1326.
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2024, Vol. 39 
