Research on Steady-State Temperature-Sensitive Electric Parameters Characteristics of GaN Devices
Wang Kaihong1, Zhu Yidi1, Sun Pengju2, Zhao Hao1, Zhu Binxin1
1. Hubei Provincial Engineering Technology Research Center for Intelligent Energy Technology China Three Gorges University Yichang 443002 China; 2. State Key Laboratory of Power Transmission Equipment Technology Chongqing University Chongqing 400044 China
Abstract：Gallium Nitride (GaN) devices have the advantages of fast switching speed, high switching frequency, and small on-resistance, which have been deeply applied in fast charging devices, data centers, and 5G devices. However, as the physical dimensions of GaN devices decrease and the power density of application devices increases, the heat flux density of the devices significantly increases, thus the junction temperature has become an important factor that cannot be ignored in the reliability of GaN devices. The junction temperature monitoring technology of GaN devices based on temperature-sensitive electrical parameters (TSEPs) is still in the exploratory stage. The study of steady-state TSEPs characteristics is helpful for the reliabilityof devices such as health management based on junction temperature. To deeply understand the steady-state TSEPscharacteristics of GaN devices, this paper explores three common steady-state TSEPs: the saturation voltage with low current injection, threshold voltage, and body-like diode voltage. Firstly, referring to the related literature and theparameter measurement standards of power switching devices, three measurement methods of TSEPs are given and physical characteristics of TSEPs related to junction temperature are analyzed, which provides a reference for subsequent parameter characteristics research. Secondly, the experimental platformis built, and the measurement circuitsare introduced for studying the characteristics of the three TSEPs. In addition, to ensure that the influence of temperature on the measurement circuit is as small as possible, the measurement circuit adopts a split type and vertical layout. The experimental results show that the influence of temperature on the measuring plate is negligible. Finally, the temperature-sensitive characteristics and stability of the three TSEPs are studied. In terms of temperature-sensitivecharacteristics, the linearity and sensitivity of the three TSEPs are mainly discussed.Also, the potential influence of the test current and gate voltageis specifically researched. In terms of stability, different types and models of the devicesare tested for comparison to ensure the feasibility of the experiment and explainthe characteristics of the device. The fluctuation coefficient is proposed to characterize the stability of TSEPs, and the stability of three parameters is evaluatedbased on the temperature cycle and current cycle experiments. The linearity, sensitivity, correlation parameters, and stability of the three TSEPs are compared. The experimental results show thatthe saturation voltage with low current injection increases with rising junction temperature, and exhibits a positive temperature coefficient under the condition of increasing test current and decreasing gate voltage. Unlike Si-based and SiC-based MOSFET devices, the threshold voltage of the tested GaN device demonstrates a positive temperature characteristic. Similarly, the body-likediode voltage increases with the test current, but it presents a positive temperature coefficient characteristic, which is different from the temperature characteristic of common diodes or body diodes inside MOSFET. To summarize, the main contributions of this paper are: the saturation voltage with low current injectionof GaN deviceshas good linearity and stability, butits sensitivity is affected by the test current and gate voltage. Overall, it has potential application value in junction temperature measurement. In addition, the threshold voltage and body-like diode voltage as TSEPs show obvious differences among different devices. In particular, for some GaN devices, the stability of the threshold voltage is not ideal, which needs to be considered in specific applications.
王凯宏, 朱一荻, 孙鹏菊, 赵浩, 邾玢鑫. GaN器件稳态温敏电参数特性的研究[J]. 电工技术学报, 2024, 39(19): 5995-6007.
Wang Kaihong, Zhu Yidi, Sun Pengju, Zhao Hao, Zhu Binxin. Research on Steady-State Temperature-Sensitive Electric Parameters Characteristics of GaN Devices. Transactions of China Electrotechnical Society, 2024, 39(19): 5995-6007.
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2024, Vol. 39 
