白炭黑含量对硅橡胶结构和憎水恢复性影响

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摘要憎水恢复性是硅橡胶的基本特性,白炭黑作为补强剂是复合绝缘子硅橡胶的基本原料。为研究白炭黑含量对硅橡胶结构和憎水恢复性的影响,炼制了不同含量白炭黑的硅橡胶试样,并对试样进行了正电子寿命谱测试,结果表明,白炭黑含量的增多,使得τ₃增加而I₃与I₄均下降,其原因是白炭黑含量的增多使得硅橡胶中物理交联点变多,同时也使得白炭黑颗粒更容易团聚,导致更多的正电子在白炭黑中湮没。对试样进行Ar等离子体老化5min,测量其憎水恢复速度,结果表明白炭黑含量的增加会使硅橡胶憎水恢复速度下降,白炭黑加入过多会影响硅橡胶憎水恢复性能,导致使用寿命变短。

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关键词 ：憎水恢复, 硅橡胶, 白炭黑, 正电子寿命谱, 等离子体

Abstract：Hydrophobicity recovery is an important characteristic of silicon rubber. Silica as reinforcing filler is the basic material of silicon rubber composite insulators. In order to study the microstructure and hydrophobicity recovery of silicon rubber with different contents of silica, the silicon rubber samples with different quality contents were refined. The results of the positron lifetime spectra showed fumed silica interacted with rubber chains. Since fumed silica could be served as physical cross-link junction, when the content of fumed silica increased, the cross-link degree of whole system also increased. On the other hand, more fumed silica resulted in bigger size agglomeration. Thus more positrons annihilated in fumed silica, and suppressed the production of Ps. So τ₃ increased while I₃ and I₄ both decreased. Otherwise, after 5 min Ar plasma treatment, the results of the hydrophobicity recovery showed that increasing fumed silica would decrease hydrophobic recovery speed. But too much fumed silica will affect the hydrophobicity recovery of silicone rubber and shorten the lifetime.

Key words： Hydrophobicity recovery silicon rubber fumed silica positron lifetime spectra plasma

收稿日期: 2014-07-16 出版日期: 2016-07-12

PACS:

TM855

基金资助:国家自然科学基金（51477123）和广东电网公司科技项目（QCSG211033-2011B11）资助

作者简介: 作者简介王康男,1988年生,博士,研究方向为高电压外绝缘。E-mail: wkang@whu.edu.cn王建国男,1968年生,教授,博士生导师,研究方向为雷电防护与接地技术、高电压绝缘与测试技术。E-mail: wjg@whu.edu.cn

引用本文:

王, 康, 王建国, 郑, 峰, 方鹏飞, 彭向阳, 许志海. 白炭黑含量对硅橡胶结构和憎水恢复性影响[J]. 电工技术学报, 2016, 31(12): 31-39. Wang Kang, Wang Jianguo, Zheng Feng, Fang Pengfei, Peng Xiangyang, Xu Zhihai. Effect of Fumed Silica Content on the Microstructure and Hydrophobicity Recovery of Silicon Rubber. Transactions of China Electrotechnical Society, 2016, 31(12): 31-39.

链接本文:

https://dgjsxb.ces-transaction.com/CN/Y2016/V31/I12/31

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