Study of Coupling Capacitance Characteristics and Its Suppression Method of HCT-Based Isolated Power Transfer Device for High-Voltage SiC Switches
Pan Jianyu1,2, Tang Haibo1,2, Jiang Yi1,2, Fu Xiaojie1,2, Yan Sheng1,2
1. State Key Laboratory of Power Transmission Equipment Technology Chongqing University Chongqing 400044 China; 2. National Innovation Center for Industry-Education Integration of Energy Storage Technology Chongqing University Chongqing 400044 China
Abstract：High-voltage silicon carbide (SiC) switches are developing rapidly and draw increasing attention. The new generation of power conversion system based on high-voltage SiC switches has advantages of smaller number of devices, higher efficiency, smaller size, etc. Thus, high-voltage SiC devices have been gradually applied to medium-voltage motor drives, solid-state transformers, grid-connected inverters and other fields. However, the isolated power supplies for the driver circuit of SiC switches are facing high dv/dt challenges, which can easily cause strong common-mode interference and device failure. High-frequency current transformer (HCT) is a novel method of isolated power transfer for high-voltage SiC devices. However, characteristics between its coupling capacitance and structural parameters are still unclear, complicating the improvement of dv/dt performance and the pursuit of miniaturization. A 3D simulation model of HCT-type isolated power transfer structure is firstly constructed, and the structural parameters are extracted through finite element simulation to systematically study the influence of structural parameters (isolation distance, eccentric position, winding mode, number of turns, etc.) on the coupling capacitance. On this basis, an optimization method of the coupling capacitance of the HCT-type device under the influence of multiple parameters is proposed to achieve the minimum coupling capacitance. Finally, the effectiveness of the proposed method and the developed device is verified by experiments. The results show that the coupling capacitance can be reduced by approximately 20% simply by adjusting the location of the penetration center of the HCT-type device. The coupling capacitance of the developed isolated power transfer device is only 0.74 pF, which is 55% and 70% lower than the conventional design and similar products, respectively. In addition, a high-voltage test platform is established, and the maximum voltage without any partial discharge of the developed device, up to 15.5 kV, is obtained through experimental tests. Finally, a prototype of the isolated power supply is built based on the proposed design, and the device was verified by experiments. Result showed that it could provide a stable energy supply to the 3.3 kV SiC devices at different frequencies. The research in this paper provides a new path of the isolated power for high-voltage SiC devices with high isolation, high interference immunity, and high compactness.
潘建宇, 唐海博, 姜怡, 付孝杰, 闫升. 高压SiC器件电流互感器型取能装置耦合电容特性和抑制研究[J]. 电工技术学报, 2025, 40(3): 800-811.
Pan Jianyu, Tang Haibo, Jiang Yi, Fu Xiaojie, Yan Sheng. Study of Coupling Capacitance Characteristics and Its Suppression Method of HCT-Based Isolated Power Transfer Device for High-Voltage SiC Switches. Transactions of China Electrotechnical Society, 2025, 40(3): 800-811.
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2025, Vol. 40 
