On-Line Condition Monitoring of IGBT Module Based on Parameter Inversion of Spatial Multi-Point Temperature
Hu Zhen1,2, Cui Man3, Wu Xiaohua1, Shi Tao1
1. College of Automation Nanjing University of Posts and Telecommunications Nanjing 210042 China; 2. Suzhou Di'ao Elevator Co. Suzhou 215200 China; 3. School of Information and Electronics Beijing Institute of Technology Beijing 100081 China
Abstract：As the core component of high voltage and high power energy conversion systems, the insulated gate bipolar transistor (IGBT) has been widely used in new energy power generation, high-speed railways, aerospace, and other fields. Due to the complex and various working environments and operation conditions, large temperature fluctuations arise during the operation of the IGBT module. Considering that the thermal expansion coefficient of each layer for the module is different, thermal mechanical stress is generated between each layer. Continuous temperature fluctuation produces cyclic thermal stress, resulting in thermal damage to materials in each layer. When the accumulation of thermal damage exceeds the safety threshold, the IGBT module will suddenly fail and eventually cause the shutdown of the energy conversion system. According to the reliability research report of power electronic systems, about 34% of energy conversion system failures are attributed to the failure of power devices such as IGBTs. Therefore, from the reliability perspective, online health condition monitoring of the IGBT module has become a significant guarantee of improving the operational reliability of the energy conversion system. This paper proposes an online health monitoring method based on parameter inversion of spatial multi-point temperature to realize thermal damage diagnosis for IGBT's bond wires and solder layer. This method can avoid the sudden failure of the IGBT module due to the accumulation of thermal damage exceeding the safety threshold, improving the reliable performance of the energy conversion system. Firstly, considering the influence of solder layer aging on the heat flow path inside the module, the temperature distribution of multiple points on the baseplate is changed. The selected multi-point baseplate temperature is collected by placing a temperature sensor between the baseplate and the heatsink. An online monitoring model of solder aging is establishedbased on the multi-point temperature difference of baseplate (▽TP). The databases of ▽TP and chip-to-substrate thermal impedance (ZJC) are established by an offline accelerated aging test method. In the application, ZJC is called by ▽TP to realize an online diagnosis of solder layer health status. Secondly, the calculation model of conduction power loss in hybrid aging mode is established. Accordingly, the inverse calculation algorithm of on-state collector-emitter voltage Vce-on based on conduction power loss is proposed. The chip junction temperature TJ is calculated based on the updated ZJC value, and the collector current IC and TJ are given into the IC-TJ-Vce-on database of the healthy IGBT module to invoke Vce-on,data at the current junction temperature. The influence of junction temperature rise caused by solder aging on Vce-on is eliminated, and the aging state of bond wires is diagnosed based on the deviation of Vce-on and Vce-on,data. Simulation and experimental results show the effectiveness of the proposed method, and the diagnostic error is about 3% under experimental conditions.
胡震, 崔曼, 吴晓华, 施涛. 基于空间多点位温度IGBT器件参数逆推的健康状态在线监测方法[J]. 电工技术学报, 2025, 40(2): 452-462.
Hu Zhen, Cui Man, Wu Xiaohua, Shi Tao. On-Line Condition Monitoring of IGBT Module Based on Parameter Inversion of Spatial Multi-Point Temperature. Transactions of China Electrotechnical Society, 2025, 40(2): 452-462.
[1] Ji Bing, Pickert V, Cao Wenping, et al.In situ diagnostics and prognostics of wire bonding faults in IGBT modules for electric vehicle drives[J]. IEEE Transactions on Power Electronics, 2013, 28(12): 5568-5577. [2] Cao Wenping, Mecrow B C, Atkinson G J, et al.Overview of electric motor technologies used for more electric aircraft (MEA)[J]. IEEE Transactions on Industrial Electronics, 2012, 59(9): 3523-3531. [3] Senturk O S, Helle L, Munk-Nielsen S, et al.Power capability investigation based on electrothermal models of press-pack IGBT three-level NPC and ANPC VSCs for multimegawatt wind turbines[J]. IEEE Transactions on Power Electronics, 2012, 27(7): 3195-3206. [4] Gong Xun, Ferreira J A.Comparison and reduction of conducted EMI in SiC JFET and Si IGBT-based motor drives[J]. IEEE Transactions on Power Electronics, 2014, 29(4): 1757-1767. [5] 胡震, 崔曼, 吴晓华, 等. 功率器件结温主动控制及优化策略[J]. 电工技术学报, 2024, 39(18): 5732-5741. Hu Zhen, Cui Man, Wu Xiaohua, et al.Active control and optimization strategy of junction temperature for power devices[J]. Transactions of China Electro- technical Society, 2024, 39(18): 5732-5741. [6] 田野, 卜凯阳, 李楚杉, 等. 用于IGBT模块温度观测的3-D降阶混合型热模型[J]. 电工技术学报, 2024, 39(16): 5104-5120. Tian Ye, Bu Kaiyang, Li Chushan, et al.A hybrid 3-D reduced-order thermal model for temperature obser- vation of IGBT modules[J]. Transactions of China Electrotechnical Society, 2024, 39(16): 5104-5120. [7] Wang Xiang, Castellazzi A, Zanchetta P.Observer based temperature control for reduced thermal cycling in power electronic cooling[J]. Applied Thermal Engineering, 2014, 64(1/2): 10-18. [8] Andresen M, Ma Ke, Buticchi G, et al.Junction temperature control for more reliable power elec- tronics[J]. IEEE Transactions on Power Electronics, 2018, 33(1): 765-776. [9] Wang Huai, Liserre M, Blaabjerg F, et al.Transi- tioning to physics-of-failure as a reliability driver in power electronics[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2014, 2(1): 97-114. [10] Choi U M, Blaabjerg F, Lee K B.Study and handling methods of power IGBT module failures in power electronic converter systems[J]. IEEE Transactions on Power Electronics, 2015, 30(5): 2517-2533. [11] Eleffendi M A, Johnson C M.Application of Kalman filter to estimate junction temperature in IGBT power modules[J]. IEEE Transactions on Power Electronics, 2016, 31(2): 1576-1587. [12] Luo Haoze, Chen Yuxiang, Sun Pengfei, et al.Junction temperature extraction approach with turn- off delay time for high-voltage high-power IGBT modules[J]. IEEE Transactions on Power Electronics, 2016, 31(7): 5122-5132. [13] 杨舒萌, 孙鹏菊, 王凯宏, 等. 恒流驱动下基于VeE_max的IGBT模块解耦老化影响的结温测量方法[J]. 电工技术学报, 2022, 37(12): 3038-3047, 3072. Yang Shumeng, Sun Pengju, Wang Kaihong, et al.Junction temperature measurement method of IGBT modules based on VeE_max under constant-current source drive which decouples fatigue effect[J]. Transactions of China Electrotechnical Society, 2022, 37(12): 3038-3047, 3072. [14] 陈宇, 周宇, 罗皓泽, 等. 计及芯片导通压降温变效应的功率模块三维温度场解析建模方法[J]. 电工技术学报, 2021, 36(12): 2459-2470. Chen Yu, Zhou Yu, Luo Haoze, et al.Analytical 3D temperature field model for power module con- sidering temperature effect of semiconductor voltage drop[J]. Transactions of China Electrotechnical Society, 2021, 36(12): 2459-2470. [15] 魏云海, 陈民铀, 赖伟, 等. 基于IGBT结温波动平滑控制的主动热管理方法综述[J]. 电工技术学报, 2022, 37(6): 1415-1430. Wei Yunhai, Chen Minyou, Lai Wei, et al.Review on active thermal control methods based on junction temperature swing smooth control of IGBTs[J]. Transactions of China Electrotechnical Society, 2022, 37(6): 1415-1430. [16] 范迦羽, 郑飞麟, 王耀华, 等. 计及热阻与发射极电感匹配的并联IGBT芯片稳态结温均衡方法[J]. 电工技术学报, 2022, 37(12): 3028-3037. Fan Jiayu, Zheng Feilin, Wang Yaohua, et al.Steady temperature equalization method for the parallel IGBTs considering the thermal resistance and the matching emitter parasitic inductance[J]. Transactions of China Electrotechnical Society, 2022, 37(12): 3028-3037. [17] Xiang Dawei, Ran Li, Tavner P, et al.Monitoring solder fatigue in a power module using the rise of case-above-ambient temperature[C]//2010 IEEE Energy Conversion Congress and Exposition, Atlanta, GA, USA, 2010: 955-962. [18] Singh A, Anurag A, Anand S.Evaluation of VCE at inflection point for monitoring bond wire degradation in discrete packaged IGBTs[J]. IEEE Transactions on Power Electronics, 2017, 32(4): 2481-2484. [19] Eleffendi M A, Johnson C M.In-service diagnostics for wire-bond lift-off and solder fatigue of power semiconductor packages[J]. IEEE Transactions on Power Electronics, 2017, 32(9): 7187-7198. [20] Baker N, Munk-Nielsen S, Iannuzzo F, et al.Online junction temperature measurement using peak gate current[C]//2015 IEEE Applied Power Electronics Conference and Exposition (APEC), Charlotte, NC, USA, 2015: 1270-1275. [21] Hoeer M, Filsecker F, Wagner M, et al.Advanced gate driver for IGBT devices with dv/dt and peak voltage limitation based on active gate-emitter voltage control[C]//2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), Karlsruhe, Germany, 2016: 1-8. [22] Xu Zhuxian, Xu Fan, Wang Fei.Junction temperature measurement of IGBTs using short-circuit current as a temperature-sensitive electrical parameter for con- verter prototype evaluation[J]. IEEE Transactions on Industrial Electronics, 2015, 62(6): 3419-3429. [23] SunPengju, Gong Can, Du Xiong, et al. Condition monitoring IGBT module bond wires fatigue using short-circuit current identification[J]. IEEE Transa- ctions on Power Electronics, 2017, 32(5): 3777-3786. [24] Sundaramoorthy V K, Bianda E, Bloch R, et al.A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn- off[J]. Microelectronics Reliability, 2014, 54(11): 2423-2431. [25] Wang Kaihong, Zhou Luowei, Sun Pengju, et al.Monitoring bond wire defects of IGBT module using module transconductance[J]. IEEE Journal of Emer- ging and Selected Topics in Power Electronics, 2021, 9(2): 2201-2211. [26] Wang Ze, Qiao Wei, Qu Liyan.A real-time adaptive IGBT thermal model based on an effective heat propagation path concept[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021, 9(4): 3936-3946.
2025, Vol. 40 
