Abstract：After silicon (Si) and gallium arsenide (GaAs), semiconductor material has third generation of wide band gap semiconductor materials represented by gallium nitride (GaN). Its characteristics include high critical breakdown electric field, high saturation electron speed, high electron density, high electron mobility and high thermal conductivity. It is suitable for high frequency, high pressure and high temperature, high power semiconductor materials with high radiation resistance. Because the switching characteristics, driving technology and loss mechanism of GaN devices have significant differences compared with the Si MOSFET, how to realize the rational drive method is very important to achieve its advantages. Taking a synchronous buck converter as an example, a resonant driving technique was proposed, and a bias voltage was added to the gate of the rectifier transistor to reduce the reverse voltage drop and improve the efficiency. The experimental results show that the resonant drive technology can effectively improve the reliability of the drive, and the efficiency of the converter can also be effectively improved after adding the bias voltage.
赵清林, 崔少威, 袁精, 王德玉. 低压氮化镓器件谐振驱动技术及其反向导通特性[J]. 电工技术学报, 2019, 34(zk1): 133-140.
Zhao Qinglin, Cui Shaowei, Yuan Jing, Wang Deyu. Resonant Drive Technology and Reverse Conduction Characteristics of Low Voltage GaN Devices. Transactions of China Electrotechnical Society, 2019, 34(zk1): 133-140.
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2019, Vol. 34 
