基于常通型SiC JFET器件的中低压直流固态断路器研究综述

doi:10.19595/j.cnki.1000-6753.tces.231806

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摘要

直流固态断路器（SSCB）作为直流配电网中关键的故障保护装置,是快速无弧隔离短路、过电流故障的重要手段。随着宽禁带半导体材料技术的飞速发展,常通型碳化硅（SiC）结型场效应晶体管（JFET）因其具有通态损耗低、零电压开通等优点,已成为SSCB主开关应用的理想器件之一。该文主要论述了直流SSCB的发展现状,针对国内外提出的基于常通型SiC JFET器件的SSCB拓扑结构进行归纳总结。在此基础上,详细论述基于常通型SiC JFET器件的单向、双向低压SSCB在过载、短路保护方面的研究现状及串联、并联型中压SSCB的拓扑结构、工作原理及应用特点,讨论了可应用于SSCB的缓冲电路及其性能特点。最后,展望了基于常通型SiC JFET器件的中低压直流SSCB发展前景。

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关键词 ：直流配电网, 固态断路器, SiC JFET拓扑, 缓冲电路

Abstract：

In recent years, with the rapid development of distributed power generation technology and the increase of direct current (DC) loads, the DC distribution network has once attracted wide attention from scholars both domestically and internationally. Due to the low impedance characteristics of the DC distribution network system, when a DC short circuit fault occurs, there is a high amplitude of fault current. Therefore, it is necessary to research fast and reliable DC circuit breakers. DC solid-state circuit breakers (SSCBs) have advantages such as fast response speed and no arc interruption, making them suitable for medium- and low-voltage DC distribution network applications. Meanwhile, with the quick advancement of wide bandgap semiconductor materials technology, normally-on silicon carbide (SiC) junction field-effect transistor (JFET) devices have become one of the ideal choices as the main switch for SSCBs due to their low conduction losses and zero voltage conduction characteristics.
Firstly, this paper introduces the current research and development status of DC SCCBs based on silicon (Si)-based and SiC-based semiconductor devices. The applications of Si-based and SiC-based DC SCCBs in industry are elaborated.
The power flow becomes bidirectional when considering the flexible integration of distributed resources such as photovoltaic, wind power, and energy storage into the DC distribution network. It is necessary to design unidirectional or bidirectional SCCBs for fault line protection based on the configuration of the SCCBs and the fault current direction in the DC lines. This paper analyzes the topology and working principle of low-voltage unidirectional and bidirectional DC SCCBs based on normally-on SiC JFET devices. The research progress regarding overload and short-circuit protection methods is discussed.
Furthermore, the factors influencing voltage and current balancing during the series and parallel operation of the main switch SiC JFET devices in medium-voltage DC SCCBs are analyzed. The topology and voltage balancing methods of medium-voltage DC SCCBs based on normally-on SiC JFET devices in series structure are introduced, and the topology and current balancing methods of medium-voltage DC SCCBs based on normally-on SiC JFETs in parallel structure are summarized. Additionally, the working principles of three types of snubber circuits, namely RC snubber circuit, RCD snubber circuit, and MOV snubber circuit,are introduced, and their performance is evaluated.
Finally, this paper provides development prospects for medium to low-voltage DC SCCBs based on normally-on SiC JFET devices. (1) Improvement methods for voltage balancing in normally-on SiC JFET devices series connected and current balancing in parallel connected devices, as well as new designs for reliable topology structures in medium-voltage DC SCCBs. (2) Failure mechanism investigation of DC SCCBs based on normally-on SiC JFET devices under complex operating conditions. (3) Research on fault detection and identification in DC SCCBs based on normally-on SiC JFET devices. (4) Coordinated protection methods for SCCBs based on multiple normally-on SiC JFET devices.

Key words： DC distribution network solid-state circuit breaker silicon carbide junction field-effect transistor topology snubber circuits

收稿日期: 2023-10-27

PACS:

TM561

基金资助:

湖南省自然科学基金资助项目（2021JJ40172）

通讯作者: 兰征男,1985年生,博士,副教授,硕士生导师,研究方向为电力电子技术及其在电力系统中的应用、新能源发电与微电网。E-mail: lan@hut.edu.cn

作者简介: 何东男,1986年生,博士,讲师,硕士生导师,研究方向为直流配电网故障保护方法及碳化硅固态断路器。E-mail: hd861116@163.com

引用本文:

何东, 蒋磊, 兰征, 王伟, 沈征. 基于常通型SiC JFET器件的中低压直流固态断路器研究综述[J]. 电工技术学报, 2024, 39(22): 7213-7227. He Dong, Jang Lei, Lan Zheng, Wang Wei, Shen Zheng. Review of Research on Medium and Low Voltage DC Solid-State Circuit Breakers Based on Normally-on SiC JFETs. Transactions of China Electrotechnical Society, 2024, 39(22): 7213-7227.

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