15 kV/10 A Double-Sided SiC Power Module with High Insulation, Low Parasitic Parameters and High Reliability Package Design
Yuan Tianshu1, Jia Lixin1, Ma Dingkun1, Sun Peiyuan1, Wang Laili1,2
1. State Key Laboratory of Electrical Insulation for Power Equipment Xi’an Jiaotong University Xi’an 710049 China; 2. Shaoxing Tongyue Wide Bandgap Semiconductor Research Institute Shaoxing 312099 China
Abstract：The bottleneck hindering the application of silicon carbide (SiC) MOSFET chips at voltage levels of 10 kV and above is the lack of reliable packaging structures. Traditional insulation enhancement technologies for high-voltage silicon carbide MOSFET modules focus on the triple junction. However, the chip neighborhood is also a high-field-strength region. Currently, this issue has been identified in 6.5 kV devices, and some improved structures have been proposed. Nevertheless, for higher voltages, especially in 15 kV silicon carbide MOSFET devices, insulation design in the chip neighborhood remains unexplored. This article reports the fabrication and test results of a 15 kV/10 A high-voltage silicon carbide power MOSFET module with insulation enhancement design for the chip neighborhood. An electric-field analysis model of the chip terminal area was established using TCAD software. Based on the electric field simulation results, it was determined that the module's source terminal would use metal pillars for interconnection rather than bonding wires to reduce the electric field intensity in this region. Additionally, a self-developed high-thermal-reliability adhesive was used to bond the polyimide frame, enhancing the insulation capability of the chip terminal area. Partial discharge tests indicate that this structure exhibits no partial discharges under operating voltages of 12 kV. Furthermore, compared with the bonding wire structure, the metal pillar structure offers a lower parasitic inductance of 4.81 nH, preventing voltage overshoot during the module's turn-off. Under 15 kV/10 A working conditions, dynamic tests of the module show that the SiC MOSFET exhibits rapid switching characteristics. The voltage turn-on and turn-off speeds are 217 kV/μs and 58 kV/μs, respectively, and the turn-on time (turn-on loss) and turn-off time (turn-off loss) are 38 ns (4.66 mJ) and 142 ns (4.63 mJ), respectively. It is demonstrated that the 15 kV SiC power module can operate at 50 kHz while maintaining low switching losses. The 15 kV high-voltage SiC module exhibits superior dynamic performance and has significant potential for pulsed power, electrical energy conversion, and power distribution networks.
袁天舒, 贾立新, 马定坤, 孙培元, 王来利. 15 kV/10 A双面碳化硅功率模块高绝缘低寄生参数高可靠性封装设计[J]. 电工技术学报, 2026, 41(6): 2001-2011.
Yuan Tianshu, Jia Lixin, Ma Dingkun, Sun Peiyuan, Wang Laili. 15 kV/10 A Double-Sided SiC Power Module with High Insulation, Low Parasitic Parameters and High Reliability Package Design. Transactions of China Electrotechnical Society, 2026, 41(6): 2001-2011.
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2026, Vol. 41 
