SiC MOSFET的短路耐受时间分析及其基于d<em>i</em>/d<em>t</em>-PMOS的短路保护

doi:10.19595/j.cnki.1000-6753.tces.241527

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摘要为了提高SiC MOSFET的短路可靠性,在不同的母线电压、驱动电压、驱动电阻、主回路寄生电感以及栅极阈值电压参数下,对SiC MOSFET短路电流特性曲线进行测量,定量分析各个参数对短路电流的影响,为如何提高SiC MOSEFT的短路耐受时间提供解决思路。同时,由于SiC MOSFET的短路耐受时间决定着对其进行短路保护动作的最大时间,所以这些不同参数的设置直接影响着SiC MOSFET短路保护电路的设计。在传统SiC MOSFET短路保护策略中,利用开尔文源极与功率源极之间寄生电感产生的感应电压,配合RC滤波器进行短路保护,存在SiC MOSFET在硬开关短路和负载短路中,触发短路保护动作阈值不一致的问题,即导致短路保护失败。针对此问题,提出基于di/dt-PMOS的短路保护策略,保证了阈值的一致性。通过公式推导以及实验验证了基于di/dt-PMOS的SiC MOSFET短路保护策略的有效性。

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关键词 ： SiC MOSFET, 短路耐受时间, 短路保护, 开尔文源极, 驱动电路

Abstract：The short-circuit tolerance of SiC MOSFETs is directly related to the heat generated during the short-circuit process, which is, in turn, directly related to the short-circuit current. Measuring short-circuit current characteristic curves under various parameters, including bus voltage, drive voltage, drive resistance, main circuit parasitic inductance, and gate threshold voltage, is essential. The impact of each parameter on the short-circuit current is analyzed to provide solutions for increasing the short-circuit withstand time (SCWT) of SiC MOSFETs. The drive voltage significantly influence the short-circuit current among these parameters, and lower gate voltage reduces the short-circuit current. Reducing the drive voltage can increase the SCWT of SiC MOSFETs. Additionally, the SCWT of SiC MOSFETs determines the maximum time for short-circuit protection actions. As a result, the settings of these different parameters directly affect the design of SiC MOSFET short-circuit protection circuits.
In traditional SiC MOSFET short-circuit protection strategies, the induced voltage generated by the parasitic inductance between the Kelvin source and power source, in conjunction with an RC filter, charges the capacitor (C) when the SiC MOSFET current changes, providing real-time feedback on the magnitude of the short-circuit current through the voltage across C. When the voltage across C exceeds a set value, the state of the SiC MOSFET is regarded as a short circuit. However, this traditional method has inconsistent short-circuit current thresholds for triggering short-circuit protection actions in hard switching faults (HSF) and fault under load (FUL), leading to the failure of short-circuit protection. Capacitor discharge is the main reason when the SiC MOSFET is normally turned on, resulting in a high short-circuit current threshold in the FUL state compared to the HSF state. Therefore, this paper proposes a short-circuit protection strategy based on di/dt-PMOS. This strategy places the PMOS's drain and source in series between the parasitic inductance and C. The unidirectional conductivity of the parasitic diode in the PMOS prevents the discharge of C when the SiC MOSFET is normally turned on, and the gate of the PMOS connecting to the SiC MOSFET's gate drive resets the discharge of C when the SiC MOSFET is turned off. It avoids complex discharge reset circuits for C and ensures the consistency of the short-circuit protection current threshold in both HSF and FUL states.
Practical measurements were conducted under different bus voltages and various initial junction temperatures. The proposed short-circuit protection strategy shows a minimum difference rate of only 3% in short circuits, while the traditional protection strategy exhibits a difference rate of 42%. The results demonstrate the effectiveness of the di/dt-PMOS-based short-circuit protection strategy for SiC MOSFETs.

Key words： SiC MOSFET short-circuit withstand time short-circuit protection Kelvin source gate driver circuit

收稿日期: 2024-08-30

PACS:

TM46

基金资助:国家自然科学基金资助项目（52107179）

通讯作者: 丰昊男,1991年生,副教授,博士生导师,研究方向为宽禁带功率半导体器件及应用。E-mail: hfeng6@cqu.edu.cn

作者简介: 谢佳明男,1995年生,博士研究生,研究方向为第三代功率半导体器件的封装、驱动及其短路保护。E-mail: xjm_phd@cqu.edu.cn

引用本文:

谢佳明, 魏金萧, 吴彬兵, 丰昊, 冉立. SiC MOSFET的短路耐受时间分析及其基于di/dt-PMOS的短路保护[J]. 电工技术学报, 2025, 40(16): 5081-5091. Xie Jiaming, Wei Jinxiao, Wu Binbing, Feng Hao, Ran Li. Analysis of Short-Circuit Withstand Time of SiC MOSFET and Short-Circuit Protection Based on di/dt-PMOS. Transactions of China Electrotechnical Society, 2025, 40(16): 5081-5091.

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