带飞跨电容的三电平拓扑中SiC MOSFET过电压与过电流保护

doi:10.19595/j.cnki.1000-6753.tces.191638

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摘要

为保证SiC MOSFET在三电平拓扑中应用的可靠性,需对其进行过电压与过电流保护。该文针对短路导致的过电压情况,提出在中点钳位（NPC）拓扑中加入大电容值飞跨电容的方法,并结合短路保护,保证发生短路故障时SiC MOSFET不过电压损坏,且能快速保护关断,以减小过电流风险。通过搭建短路测试平台,验证了三电平电路发生短路故障时,大电容值飞跨电容对SiC MOSFET起到过电压保护作用,且SiC MOSFET的短路保护时间在2μs以内。

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	庄桂元
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	刘威
	庄加才

关键词 ：三电平, 大电容值, 飞跨电容, 过电压保护

Abstract：

In order to ensure the reliability of SiC MOSFET application in three-level topology, it is necessary to carry out overvoltage protection and overcurrent protection. According to the overvoltage caused by short circuit, combined with the short circuit protection method, this paper proposes a method of adding a flying capacitor with a large capacitance to the Neutral Point Clamped (NPC) topology. In this way, the SiC MOSFET is not damaged when a short circuit fault occurs and can be quickly turned off to reduce the risk of overcurrent. By setting up a short-circuit test platform, it is verified that when a short-circuit fault occurs in the three-level circuit, the flying capacitor with large capacitance can protect SiC MOSFET from overvoltage, and the short-circuit protection time of SiC MOSFET is less than 2μs.

Key words： Three-level large-capacitance flying capacitor overvoltage protection

收稿日期: 2019-11-26

PACS:	TN386.1
	TM131.1

基金资助:

国家自然科学基金联合基金资助项目（U1766207）

通讯作者: 庄桂元男,1995年生,硕士研究生,研究方向为SiC MOSFET的短路保护。E-mail: zhuang_guiyuan@126.com

作者简介: 张兴男,1963年生,教授,博士生导师,研究方向为智能光伏发电及其逆变控制技术。E-mail: honglf@ustc.edu.cn

引用本文:

庄桂元, 张兴, 刘威, 庄加才. 带飞跨电容的三电平拓扑中SiC MOSFET过电压与过电流保护[J]. 电工技术学报, 2021, 36(2): 341-351. Zhuang Guiyuan, Zhang Xing, Liu Wei, Zhuang Jiacai. Overvoltage and Overcurrent Protection of SiC MOSFET in Three-Level Topology with Flying Capacitor. Transactions of China Electrotechnical Society, 2021, 36(2): 341-351.

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