Abstract：Based on self-developed SiC devices,this paper presents the fabrication and characterization of a 4 500 V/150 A SiC Schottky barrier diode (SBD) power module and a 4 500 V/50 A junction field effect transistor (JFET) power module.Additionally,with an appropriate gate drive circuit,the static and dynamic performances of both modules are also evaluated.The testing results indicate good current-conducting,voltage-blocking,and switching capabilities of the fabricated modules.This work demonstrates the highest power level of SiC power modules with self-fabricated chips in China.
何骏伟,陈思哲,任 娜,柏 松,陶永洪,刘 奥,盛 况. 4 500 V碳化硅SBD和JFET功率模块的制备与测试[J]. 电工技术学报, 2015, 30(17): 63-69.
He Junwei,Chen Sizhe,Ren Na,Bai Song,Tao Yonghong,Liu Ao,Sheng Kuang. Fabrication and Testing of 4 500 V SiC SBD and JFET Power Modules. Transactions of China Electrotechnical Society, 2015, 30(17): 63-69.
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2015, Vol. 30 
