高压直流绝缘材料表面电荷积聚研究进展

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摘要随着直流输电技术的发展,直流气体绝缘金属封闭开关设备（GIS）因其具有占地面积小、可靠性高、维护少等优点已得到越来越多的关注。相比交流GIS,直流GIS盆式绝缘子存在严重的表面电荷积聚问题,导致其沿面闪络特性下降,制约着直流GIS的工程应用。目前关于高压直流下绝缘材料表面电荷积聚特性及抑制措施的研究已成为国际上的热点,本文对此进行系统性的综述,包括：表面电荷测试的常用技术和电荷反演算法,表面电荷的积聚途径及相应来源,表面电荷积聚的仿真模型,表面电荷积聚的影响因素及调控措施。最后,对表面电荷积聚下一步的研究工作给出了建议。

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关键词 ：直流, 绝缘材料, 表面电荷, 积聚, 综述

Abstract：With the development of dc transmission technique, DC gas insulated switchgear (GIS) is attracting more and more attentions. DC GIS has the advantages of compact size, high reliability and little maintenance. Compared with ac GIS, the surface charges accumulating on the cone-type insulator is more serious for dc GIS, which can lead to the decrease of its surface flashover performance and hence restricts the application of dc GIS in engineering. At present, the investigation about the characteristics of surface charge accumulation and the corresponding suppression means under HVDC is a hot topic. In this paper, the related studies were reviewed, including the techniques of surface charge measurement and inversion algorithm, the accumulation ways and corresponding sources of surface charges, the influencial factors and suppression methods of surface charge accumulation. At last, some proposals for the future investigation of surface charge accumulation were presented.

Key words： Direct current, insulating material, surface charges, accumulation, review

收稿日期: 2015-05-25 出版日期: 2017-05-02

PACS:

TM85

基金资助:国家自然科学基金（51607128）和湖北省自然科学基金（2016CFB111）资助项目

作者简介: 唐炬男,1960年生,博士,教授,博士生导师,研究方向为大型电力变压器和气体组合绝缘电器早期与突发性故障的检测与诊断、电气设备局部放电特高频监测技术与模式识别、电气设备绝缘在线监测与抗干扰技术、电气设备状态检修与安全运行评估。E-mail: cqtangju@vip.sina.com（通信作者）;潘成男,1986年生,博士,讲师,研究方向为局部放电机理、表面电荷积聚特性。E-mail: pancheng2036@gmail.com

引用本文:

唐炬, 潘成, 王邸博, 傅明利, 卓然. 高压直流绝缘材料表面电荷积聚研究进展[J]. 电工技术学报, 2017, 32(8): 10-21. Tang Ju, Pan Cheng, Wang Dibo, Fu Mingli, Zhuo Ran. Development of Studies about Surface Charge Accumulation on Insulating Material under HVDC. Transactions of China Electrotechnical Society, 2017, 32(8): 10-21.

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https://dgjsxb.ces-transaction.com/CN/Y2017/V32/I8/10

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