高压SiC器件HCT型隔离取能装置的耦合电容特性和抑制方法研究

doi:10.19595/j.cnki.1000-6753.tces.240021

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摘要

高压碳化硅（SiC）器件驱动电路的隔离电源面临更高的dv/dt冲击,极易引起强共模干扰而导致器件失效。高频电流互感器（HCT）型取能是一种新型高压SiC器件隔离取能方法,但是其耦合电容与结构参量关联特性不清,难以有效提升抗dv/dt性能和实现小型化。该文首先构建了HCT型隔离取能结构的三维仿真模型,系统性探究了其关键结构参量（隔离距离、偏心位置、绕组绕制方式、匝数等）对耦合电容的影响特性;然后,提出了HCT型取能结构多参量影响下的耦合电容优化方法,同等体积下达到耦合电容最小;最后,通过实验验证了所述方法和所研装置的有效性。结果表明,仅通过调整HCT型隔离取能结构穿心位置可降低约20%的耦合电容,所研取能装置隔离容值仅为0.74 pF,比传统设计和同类商品分别降低了55%和70%,最大无局部放电电压达到15.5 kV。

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关键词 ：高压SiC器件, 隔离取能装置, 低耦合电容, 电流互感器

Abstract：

High-voltage silicon carbide (SiC) switches are developing rapidly and draw increasing attention. The new generation of power conversion system based on high-voltage SiC switches has advantages of smaller number of devices, higher efficiency, smaller size, etc. Thus, high-voltage SiC devices have been gradually applied to medium-voltage motor drives, solid-state transformers, grid-connected inverters and other fields. However, the isolated power supplies for the driver circuit of SiC switches are facing high dv/dt challenges, which can easily cause strong common-mode interference and device failure.
High-frequency current transformer (HCT) is a novel method of isolated power transfer for high-voltage SiC devices. However, characteristics between its coupling capacitance and structural parameters are still unclear, complicating the improvement of dv/dt performance and the pursuit of miniaturization.
A 3D simulation model of HCT-type isolated power transfer structure is firstly constructed, and the structural parameters are extracted through finite element simulation to systematically study the influence of structural parameters (isolation distance, eccentric position, winding mode, number of turns, etc.) on the coupling capacitance. On this basis, an optimization method of the coupling capacitance of the HCT-type device under the influence of multiple parameters is proposed to achieve the minimum coupling capacitance. Finally, the effectiveness of the proposed method and the developed device is verified by experiments.
The results show that the coupling capacitance can be reduced by approximately 20% simply by adjusting the location of the penetration center of the HCT-type device. The coupling capacitance of the developed isolated power transfer device is only 0.74 pF, which is 55% and 70% lower than the conventional design and similar products, respectively. In addition, a high-voltage test platform is established, and the maximum voltage without any partial discharge of the developed device, up to 15.5 kV, is obtained through experimental tests. Finally, a prototype of the isolated power supply is built based on the proposed design, and the device was verified by experiments. Result showed that it could provide a stable energy supply to the 3.3 kV SiC devices at different frequencies. The research in this paper provides a new path of the isolated power for high-voltage SiC devices with high isolation, high interference immunity, and high compactness.

Key words： High-voltage SiC switch isolated power supply low coupling capacitance current transformer

收稿日期: 2024-01-04

基金资助:

国家高层次青年人才项目（HW2021005）和重庆市自然科学基金面上项目（cstc2021jcyj-msxmX0871）资助

通讯作者: 潘建宇男,1989年生,博士,教授,研究方向为中高压变换器控制,SiC电驱动和高电压放电防护技术。E-mail：panjianyu@cqu.edu.cn

作者简介: 唐海博男,1998年生,硕士研究生,研究方向为碳化硅器件应用。E-mail：tanghaibo@cqu.edu.cn

引用本文:

潘建宇, 唐海博, 姜怡, 付孝杰, 闫升. 高压SiC器件HCT型隔离取能装置的耦合电容特性和抑制方法研究[J]. 电工技术学报, 0, (): 240021-240021. Pan Jianyu, Tang Haibo, Jiang Yi, Fu Xiaojie, Yan Sheng. Study of Coupling Capacitance Characteristics and Its Suppression Method of HCT-Based Isolated Power Transfer Device for High-Voltage SiC Switches. Transactions of China Electrotechnical Society, 0, (): 240021-240021.

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