Active Gate Drive with Discharge Compensation for Series-Connected IGBT
Zhou Ye1, Wang Xu1, Xian Liang2, Yang Dan1
1. School of Information Science & Engineering Northeastern University Shenyang 110819 China; 2. Energy Research Institute Nanyang Technological University 627590 Singapore
Abstract：An active gate drive circuit for mitigating charge deviations among input capacitances of IGBTs during the turn-off transient is proposed in this paper to solve the problem of unbalanced voltage sharing among series-connected IGBTs. The circuit consists of a compensation providing current sink circuit, a closed-control and sampling circuit, and a triggering circuit that combines high-bandwidth analog parts with the relatively low-frequency control algorithm. Compared with other active gate drive circuits applied in series-connected IGBTs, the proposed circuit is only triggered by the falling-edge of the signal generated from the original gate drive IC, and does not introduce any additional power supply or signal isolation unit, which is easy to combine with commercial gate drive ICs. The frequency of sampling and control is consistent with the switching frequency of the IGBT, avoiding the use of expensive high-frequency control chips or AD/DA converters. Based on the analysis of the gate discharge deviations during the turn-off transient, the operational principle and design guideline for each module of the proposed driving circuit are specified. Experimental results verify the effectiveness and applicability of this driving scheme in voltage equalization control of series IGBTs.
周野, 王旭, 鲜亮, 杨丹. 基于门极放电补偿的串联IGBT有源驱动电路[J]. 电工技术学报, 2021, 36(18): 3934-3945.
Zhou Ye, Wang Xu, Xian Liang, Yang Dan. Active Gate Drive with Discharge Compensation for Series-Connected IGBT. Transactions of China Electrotechnical Society, 2021, 36(18): 3934-3945.
[1] 苏见燊, 郭敬东, 金涛. 柔性直流电网中直流故障特性分析及线路故障重启策略[J]. 电工技术学报, 2019, 34(增刊1): 352-359. Su Jianshen, Gou Jingdong, Jin Tao.DC fault characteristics and line fault recovery strategy in flexible DC power network[J]. Transactions of China Electrotechnical Society, 2019, 34(S1): 352-359. [2] 张志文, 雷诗婕, 翟承达, 等. 高压直流输电系统吸收与并联电容换相换流器特性分析[J]. 电工技术学报, 2019, 34(2): 684-691. Zhang Zhiwen, Lei Shijie, Zhai Chengda, et al.The characteristic analysis of HVDC system with absorption and shunt capacitance commutated converter[J]. Transactions of China Electrotechnical Society, 2019, 34(2): 684-691. [3] 刘建强, 刘传铎, 王轶欧, 等. 单相PWM整流器IGBT及直流侧电容故障诊断方法[J]. 电工技术学报, 2019, 34(增刊1): 244-257. Liu Jianqiang, Liu Chuanduo, Wang Yiou, et al.Fault diagnosis method for IGBT and DC-link capacitor of single-phase PWM rectifier[J]. Transactions of China Electrotechnical Society, 2019, 34(S1): 244-257. [4] 贾英杰, 罗毅飞, 肖飞, 等. 一种符合欧姆定律的IGBT等效电阻模型[J]. 电工技术学报, 2020, 35(2): 310-317. Jia Yingjie, Luo Yifei, Xiao Fei, et al.An equivalent electrical resistance model of IGBT suitable for Ohm's law[J]. Transactions of China Electrotechnical Society, 2020, 35(2): 310-317. [5] Zhang Xiangyu, Yu Zhanqing, Chen Zhengyu, et al.Modular design methodology of DC breaker based on discrete metal oxide varistors with series power electronic devices for HVDC application[J]. IEEE Transactions on Industrial Electronics, 2019, 66(10): 7653-7662. [6] Guerrero A F, Ustariz-Farfan A J, Tacca H E, et al. IGBT series connection with soft switching and power recovery in driver power supply[J]. IEEE Transactions on Power Electronics, 2019, 34(12): 11679-11691. [7] Zarghani M, Mohsenzade S, Kaboli S.A series stacked IGBT switch based on a concentrated clamp mode snubber for pulsed power applications[J]. IEEE Transactions on Power Electronics, 2019, 34(10): 9573-9584. [8] Mohsenzade S, Zarghani M, Kaboli S.A high-voltage series-stacked IGBT switch with active energy recovery feature for pulsed power applications[J]. IEEE Transactions on Industrial Electronics, 2020, 67(5): 3650-3661. [9] 宋慧敏, 田苗, 吴俊锋, 等. 均压驱动耦合型单驱动IGBT串联电路设计[J]. 高压电器, 2019, 55(5): 144-153. Song Huimin, Tian Miao, Wu Junfeng, et al.Design of voltage-sharing driving coupled single driving IGBT series circuit[J]. High Voltage Apparatus, 2019, 55(5): 144-153. [10] Bagheri A, Iman-Eini H, Farhangi S.A gate driver circuit for series-connected IGBTs based on quasi-active gate control[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6(2): 791-799. [11] Teerakawanich N, Johnson C.Design optimization of quasi-active gate control for series-connected power devices[J]. IEEE Transactions on Power Electronics, 2014, 29(6): 2705-2714. [12] Ji Shiqi, Wang Fei, Tolbert L M, et al.An FPGA-based voltage balancing control for multi-HV-IGBTs in series connection[J]. IEEE Transactions on Industry Applications, 2018, 54(5): 4640-4649. [13] 周野, 王旭, 鲜亮, 等. 基于多级钳位与门信号调节相结合的IGBT串联均压电路研究[J]. 中国电机工程学报, 2020, 40(13): 4277-4290. Zhou Ye, Wang Xu, Xian Liang, et al.Voltage balancing circuit for series-connected IGBTs based on multi-level clamp topology and gate drive signal adjustment[J]. Proceedings of the CSEE, 2020, 40(13): 4277-4290. [14] Yang Xin, Yuan Ye, Zhang Xueqiang, et al.Shaping high-power IGBT switching transitions by active voltage control for reduced EMI generation[J]. IEEE Transactions on Industry Applications, 2015, 51(2): 1669-1677. [15] Zhang Fan, Yang Xu, Ren Yen, et al.A hybrid active gate drive for switching loss reduction and voltage balancing of series-connected IGBTs[J]. IEEE Transa-ctions on Power Electronics, 2017, 32(10): 7469-7481. [16] Nguyen V, Kerachev L, Lefranc P, et al.Characteri-zation and analysis of an innovative gate driver and power supplies architecture for HF power devices with high dv/dt[J]. IEEE Transactions on Power Electronics, 2017, 32(8): 6079-6090. [17] Baraia I, Barrena J, Abad G, et al.An experimentally verified active gate control method for the series connection of IGBT/diodes[J]. IEEE Transactions on Power Electronics, 2012, 27(2): 1025-1038. [18] Baliga B J.Fundamentals of power semiconductor devices[M]. Switzerland: Springer, 2019. [19] Ren Yu, Yang Xu, Zhang Fan, et al.A compact gate control and voltage-balancing circuit for series-connected SiC MOSFETs and its application in a DC breaker[J]. IEEE Transactions on Industrial Electro-nics, 2017, 64(10): 8299-8309. [20] Lu Ting, Zhao Zhengming, Yu Hualong, et al.Parameter design of a three-level converter based on series-connected HV-IGBTs[J]. IEEE Transactions on Industry Applications, 2014, 50(6): 3943-3954.
2021, Vol. 36 
