Development of Large Size IGBT Chip with High Power Capacity of 4 500V/600A
Liu Guoyou1,2, Huang Jianwei1,3, Qin Rongzhen1,3, Zhu Chunlin1,3
1. State key Laboratory of Advanced Power Semiconductor Devices Zhuzhou 412001 China; 2. Zhuzhou CRRC Times Electric Co. Ltd Zhuzhou 412001 China; 3. Zhuzhou CRRC Times Semiconductor Co. Ltd Zhuzhou 412001 China
Abstract：Increasing IGBT single-chip current capacity is essential for reducing the parallel number of packaged chips, simplifying the package architecture and improving the chip current sharing capability. According to the application requirements of high voltage, high current and high reliability for IGBT chips, this paper realized cell switching synchronization through robust cell design and its coordinated control, and solved the process manufacturing of large size chips through special photolithography technology. The single-chip press packaging was used to verify the design and performance of large size chips. A technical path for the design, manufacturing and verification of large size IGBT chips was explored. The world's first 42mm×42mm large-size high-voltage IGBT chip with the power capacity of 4 500V/600A was developed. It has excellent dynamic and static characteristics, a wider safe operation area (SOA), and can significantly improve the packaging power density and reliability.
刘国友, 黄建伟, 覃荣震, 朱春林. 高压大电流（4 500V/600A）IGBT芯片研制[J]. 电工技术学报, 2021, 36(4): 810-819.
Liu Guoyou, Huang Jianwei, Qin Rongzhen, Zhu Chunlin. Development of Large Size IGBT Chip with High Power Capacity of 4 500V/600A. Transactions of China Electrotechnical Society, 2021, 36(4): 810-819.
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2021, Vol. 36 
