Abstract：The outstanding semiconductor properties of SiC material,e.g.wide bandgap,high critical electric field,high saturation velocity,and thermal conductivity,promise the SiC device a new generation power electronics element with higher speed,higher voltage and,higher temperature operation potential than the silicon device.To fulfill the high temperature operation requirements from SiC device,the gate drive circuit should be designed with high temperature operation capability.This paper reviews contemporary high temperature gate drive design approaches and proposes a high temperature gate drive circuit based on transformer isolation and commercially available silicon discrete components.Performance of the designed circuit is evaluated by both computer simulations and high temperature experimental tests.
祁锋, 徐隆亚, 王江波, 赵波, 周哲. 一种为碳化硅MOSFET设计的高温驱动电路[J]. 电工技术学报, 2015, 30(23): 24-31.
Qi Feng, Xu Longya, Wang Jiangbo, Zhao Bo, Zhou Zhe. A High Temperature Gate Drive Circuit for SiC MOSFET. Transactions of China Electrotechnical Society, 2015, 30(23): 24-31.
[1] Dreike P L,Fleetwood D M,King D B,et al.An overview of high-temperature electronic device technologies and potential applications[J].IEEE Transactions on Components,Packaging,and Manufacturing Technology,1994,17(4):594-609. [2] DiMarino C,Zheng Chen,Danilovic M,et al.High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs[C].IEEE Energy Conversion Congress and Exposition,Denver,CO,2013:3235-3242. [3] Texas Instruments.2.5 A and 5 A,35-VMAX VDD FET and IGBT single-gate driver(Rev.A)[R].UCC27531-Q1 Datasheet,2013. [4] CISSOID.CHT-ATLAS dual channel power transistor driver(Rev.3.4)[R].CHT-ATLAS Datasheet,2013. [5] Wang Ruxi,Boroyevich D,Ning Puqi,et al.A high-temperature SiC three-phase AC-DC converter design for >100/spl deg/C ambient temperature[J].IEEE Transactions on Power Electronics,2013,28(1):555-572. [6] Lostetter A,Hornberger J,McPherson B,et al.High-temperature silicon carbide and silicon on insulator based integrated power modules[C].IEEE Vehicle Power and Propulsion Conference,Dearborn,MI,2009:1032-1035. [7] Kashyap Avinash S,Chen Cheng-Po,Ghandi Reza,et al.Silicon carbide integrated circuits for extreme environments[C].IEEE Workshop on Wide Bandgap Power Devices and Applications,Columbus,OH,2013:60-63. [8] Huque M A,Islam S K,Tolbert L M,et al.A 200℃ universal gate driver integrated circuit for extreme environment applications[J].IEEE Transactions on Power Electronics,2012,27(9):4153-4162. [9] Magnetics.Using magnetics at high temperatures[R].Technical Bulletin CG-06,2001.
2015, Vol. 30 
