Abstract：PIN power diode was widely used in power conversion and processing power electronic systems, but for a long time the absence of effective methods for its parameter extraction limited its accuracy of physical model and improvement of application level. This paper analyzes its physical structure and dynamic properties and determines critical parameters which dominate its dynamic characteristics of the power diode. By the method of combining Saber dynamic simulation and quantum genetic algorithm ,the PIN power diode physic model parameters are identified. Finally, an effective experimental test of the extracted ZP800A3000V’s physic model parameter is discussed and proves the effectiveness of this method.
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2015, Vol. 30 
