特高压快速断路器凸起型陷阱与阶梯加压老炼程序协同优化设计

doi:10.19595/j.cnki.1000-6753.tces.250654

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摘要快速断路器作为新一代气体绝缘开关设备（GIS）,其小型化结构虽提升了开断性能,但也使其内部金属微粒在高电场下更易起举并加速运动,在入陷前诱发放电。因此,该文首先提出一种适用于800 kV快速断路器的曲面结构凸起型微粒陷阱设计方案,综合考虑绝缘裕度、微粒捕获与机械应力等因素,将结构参数优化为：厚度3 mm、圆周角40°、提上高度5 mm、槽孔尺寸30 mm× 5 mm,并布设于断口下方与气室端部等关键绝缘区域。仿真结果表明,该陷阱结构在满足典型微粒尺寸捕获需求的同时,也不影响设备原本的绝缘裕度。同时,基于设备的内部电场分布情况,提出微粒安全运动高度阈值为10 cm,并基于微粒入陷仿真构建阶梯加压老炼程序,该程序涵盖6个电压阶梯（280~700 kV）,耐压时间1~5 min,升压速率10 kV/s。然后,搭建800 kV快速断路器真型试验平台,结合高速摄像与超声检测技术开展验证试验,结果表明微粒可稳定入陷,整个耐压过程中未发生放电事件。与直接升压方式相比,微粒运动信号强度降低38%。该研究成果可为快速断路器绝缘设计及GIS微粒抑制提供理论与工程支持。

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关键词 ：特高压, 快速断路器, 凸起型陷阱, 阶梯加压, 老炼程序, 真型试验

Abstract：The fast-acting circuit breaker (FACB), as a new generation high-voltage switching device in gas-insulated switchgear (GIS), is widely deployed in ultra-high-voltage DC transmission systems. Its increasingly compact structure significantly reduces internal insulation gaps, posing critical challenges to insulation reliability. During operation and testing, residual or generated metallic particles can easily lift and accelerate under high electric fields, becoming a major source of partial discharges or dielectric breakdown. Engineering experience indicates that, during power frequency withstand tests, if particles are not securely trapped in advance, direct voltage application may induce discharge and obscure latent defects. Therefore, it is crucial to develop a coordinated strategy integrating particle traps with voltage conditioning procedures to ensure particle suppression prior to high-voltage application.
To address this, a curved-structure protruded particle trap specifically designed for 800 kV FACB is proposed. Simulation of local electric fields and particle trajectories reveals a dual trapping mechanism combining low-field zones and physical obstructions. Without compromising insulation margins, key structural parameters were optimized—trap thickness of 3 mm, circumferential angle of 40°, height of 5 mm, and slot dimensions of 30 mm × 5 mm—with the trap installed near the interrupter gap and enclosure ends. Simulation results confirm this design balances trapping efficiency and structural reliability, making it well-suited for engineering application.
Further field analysis revealed a low-gradient zone approximately 10 cm above the ground electrode, serving as a safe particle movement region. Based on this, the particle safety height was defined. Trajectory simulations were then conducted for representative particle types (spherical: 0.5~1 mm; linear: 0.1~1 mm; flake: 0.15~0.3 mm thick), and their corresponding safe trapping voltages were determined. A stepwise voltage conditioning program was proposed and refined into six voltage steps—280 kV, 350 kV, 420 kV, 500 kV, 630 kV, and 700 kV—with durations of 1~5 min and a ramp rate of 10 kV/s.
Validation experiments were conducted on a full-scale 800 kV FACB platform. High-speed imaging and ultrasonic sensing confirmed that all particles were stably captured within their respective voltage stages, with no re-lifting or discharge events observed. Compared to direct voltage application, the proposed method reduced particle motion signal intensity by up to 38%. These results verify the practical effectiveness and engineering value of the proposed trap structure and stepwise conditioning program, offering theoretical and technical guidance for insulation reliability improvement in FACB and GIS applications.

Key words： UHV fast-acting circuit breaker raised-type trap stepwise voltage ramping conditioning method full-scale experiment

收稿日期: 2025-04-22

PACS:

TM84

基金资助:国家电网有限公司科技项目资助（5500-202355794A-3-8-KJ）

通讯作者: 王健男,1985年生,教授,博士生导师,研究方向为高电压与绝缘技术、放电物理等。E-mail：wangjian31791@ncepu.edu.cn

作者简介: 耿秋钰男,1998年生,博士研究生,研究方向为交直流GIS/GIL微粒抑制技术与绝缘优化设计。E-mail：gengqiuyu19981123@163.com

引用本文:

耿秋钰, 王健, 李庆民, 边亚琳, 傅中. 特高压快速断路器凸起型陷阱与阶梯加压老炼程序协同优化设计[J]. 电工技术学报, 2026, 41(9): 3170-3182. Geng Qiuyu, Wang Jian, Li Qingmin, Bian Yalin, Fu Zhong. The Coordinated Optimization Design of Raised-Type Particle Trap and Stepwise Voltage Conditioning Method for UHV Fast-Acting Circuit Breaker. Transactions of China Electrotechnical Society, 2026, 41(9): 3170-3182.

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