摘要 SiC MOSFET具有低导通电阻、低开关损耗、高开关频率以及优异的反向恢复特性。器件过快的开关速度,会导致严重的开关过冲、振荡和串扰。此外其短路承受能力弱,需要保护电路具备更快的响应速度,但较高的开关变化率,又使得保护电路的快速响应与抗噪声能力难以兼顾。为确保其安全可靠工作,该文提出基于多段式电平调控的驱动与保护方法。驱动方法解决开关过程多个目标的协同优化问题,在获得较快的开关速度和低损耗的同时,有效地抑制过冲和振荡;保护方法提出了增加补偿回路的导通压降检测电路,降低了温度和负载变化对检测精度的影响,同时提出了两段式降低栅压的关断方法,增大故障检测盲区时间以降低干扰噪声影响,并采用软关断技术,抑制关断过电压。
Abstract：SiC MOSFETs feature low on-resistance, low switching losses, high switching frequencies, and excellent reverse recovery characteristics. Fast switching speeds can lead to severe switching overshoot, oscillations, and crosstalk. In addition, the short-circuit tolerance is weak, and the protection circuit requires a faster response time. Additionally, the fast response and anti-noise capabilities of the short-circuit protection circuit are challenging to balance at higher switching rates. Therefore, this paper proposes a driving and protection strategy based on multi-stage voltage level control. Driving strategy solves the cooperative optimization of multiple objectives in the switching trace. In terms of protection, a detection circuit with on-state voltage compensation is proposed, which reduces the influence of temperature and load changes on detection accuracy. In addition, a two-stage gate voltage reduction method is proposed to improve the time of fault detection in the blind zone and reduce the influence of interference noise. The soft turn-off technology is used to suppress the turn-off overvoltage. Firstly, the mathematical relationship model between the gate voltage and the voltage/current change rate of the switching process is established. Changing the driving voltage level enables effective control of the current and voltage change rate in the switching process. Switching overshoot Δid and Δvds are suppressed, and the oscillation amplitude is reduced. Secondly, after analyzing the problems of desaturation detection and di/dt detection methods for current faults in SiC MOSFETs, this paper proposes an improved detection circuit for desaturation voltage, incorporating a compensation circuit to mitigate the impact of temperature changes and load fluctuations. Finally, a multi-level drive circuit and an improved protection method are proposed for SiC MOSFET. A double-pulse experiment and a short circuit test verify the designed multi-level driver. In terms of switching trace control, the multi-level driver employs a three-stage variable voltage control strategy to regulate the gate charge and discharge current at various switching stages. It can realize the multi-objective collaborative optimization of the switching trace. The overshoot and oscillation of SiC MOSFETs are effectively suppressed while achieving fast switching speed and low loss. In terms of short-circuit protection, a detection circuit is proposed to increase the conduction voltage of the compensation loop, which reduces the influence of temperature and load changes. The detection accuracy is greatly improved. The two-stage inverse time protection method enables the independent detection and protection of overcurrent and short-circuit faults. The two-stage turn-off method limits the increase of short-circuit current. The detection time of blind areas under short-circuit faults can be increased to reduce the influence of interference noise, and the soft turn-off technology can be used to suppress the turn-off overvoltage and oscillation.
白建成, 客金坤, 高冲, 许京涛, 冯静波. 基于多段式电平调控的SiC MOSFET驱动与保护策略[J]. 电工技术学报, 2025, 40(22): 7301-7312.
Bai Jiancheng, Ke Jinkun, Gao Chong, Xu Jingtao, Feng Jingbo. Driving and Protection Strategy of SiC MOSFET Based on Multi-Stage Voltage Level Control. Transactions of China Electrotechnical Society, 2025, 40(22): 7301-7312.
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