Active Neutral-Point-Clamped Converter Based on Heterogeneous Hybrid Half-Bridge Shunt Output and Its Control Strategy
Zhong Yan1, Guo Qi1, Hou Yuchao2, Tu Chunming1, Zhang Huaying2
1. National Electric Power Conversion and Control Engineering Technology Research Center Hunan University Changsha 410082 China; 2. Shenzhen Power Supply Co. Ltd Shenzhen 518001 China
Abstract：The multi-level converter based on the hybrid of SiC and Si devices can achieve the equivalent switching frequency and operating loss similar to the full SiC device converter, greatly reducing the device cost. To realize the comprehensive optimization of efficiency and cost of active neutral-point-clamped converter, this paper proposes an active neutral-point-clamped converter based on heterogeneous hybrid half-bridge shunt output, referred to as hybrid active neutral-point-clamped converter (HANPC). HANPC consists of a fundamental frequency module based on a Si IGBT device, a low-frequency module, and a high-frequency module based on a SiC MOSFET device. This paper adopts the high- and low-frequency hybrid modulation strategy to utilize the low switching loss of SiC devices. Furthermore, the shunt compensation principle of the low-frequency and high-frequency modules is introduced. The low frequency of the Si device compensates for the large current, while the high frequency of the SiC device compensates for the small current and improves the waveform quality of the output current. The split ratio and switching frequency of the low-frequency and high-frequency modules are optimized, and the control strategy of HANPC is given. The proposed topology can ensure the waveform quality of the total current. The Si IGBT works at the fundamental frequency and low frequency, while the high-frequency switching action is concentrated on the SiC MOSFET. In terms of operating loss, based on the joint simulation platform of Matlab/Simulink and PLECS, HANPC is compared with the existing topology under different load powers and equivalent switching frequencies. Taking the load power of 39 kvar and the equivalent switching frequency of 20kHz as an example, the total loss of the proposed HANPC topology is 38.1% and 17.9% lower than that of Si-ANPC and SiC-ANPC, respectively. In terms of cost, the proposed topology is compared with the existing topology in terms of switching devices, drive chips, drive power supplies, and filter inductors. The proposed topology cost is 46.7% higher than that of Si-ANPC and 54.5% lower than that of SiC-ANPC. The following conclusions can be drawn. (1) The proposed HANPC topology distributes most of the load current to the low-frequency module through the shunt output, while the high-frequency module only passes a small part of the current. The required capacity of the SiC device in the high-frequency module is significantly reduced. Compared with the traditional full SiC-ANPC topology, the cost is reduced by 54.5%. (2) The proposed modulation strategy can focus the high-frequency switching action of the output voltage on the SiC MOSFET device, and the Si IGBT works at the fundamental frequency and low frequency, effectively improving the grid-connected converter's operation efficiency. (3) The efficiency of the proposed HANPC is close to that of SiC-ANPC under light load conditions. When the output power is greater than 36 kvar, the efficiency of the proposed HANPC is better than that of SiC-ANPC and ANPC topology based on the parallel output of SiC devices.
钟延, 郭祺, 侯玉超, 涂春鸣, 张华赢. 基于异质混合半桥分流输出的有源中点钳位型变换器及其调控策略[J]. 电工技术学报, 2025, 40(20): 6630-6643.
Zhong Yan, Guo Qi, Hou Yuchao, Tu Chunming, Zhang Huaying. Active Neutral-Point-Clamped Converter Based on Heterogeneous Hybrid Half-Bridge Shunt Output and Its Control Strategy. Transactions of China Electrotechnical Society, 2025, 40(20): 6630-6643.
[1] 孙帅, 林仲康, 唐新灵, 等. 宽禁带半导体器件开关振荡研究综述[J]. 中国电机工程学报, 2024, 44(6): 2386-2408. Sun Shuai, Lin Zhongkang, Tang Xinling, et al.A review of switching oscillation in wide band gap semiconductor devices[J]. Proceedings of the CSEE, 2024, 44(6): 2386-2408. [2] 张少昆, 孙微, 范涛, 等. 基于分立器件并联的高功率密度碳化硅电机控制器研究[J]. 电工技术学报, 2023, 38(22): 5999-6014. Zhang Shaokun, Sun Wei, Fan Tao, et al.Research on high power density silicon carbide motor controller based on parallel connection of discrete devices[J]. Transactions of China Electrotechnical Society, 2023, 38(22): 5999-6014. [3] 谭亚雄, 张梦洋, 刘元, 等. 一种连续函数描述的高精度SiC MOSFET模型[J]. 电工技术学报, 2024, 39(18): 5719-5731. Tan Yaxiong, Zhang Mengyang, Liu Yuan, et al.A high-precision SiC MOSFET model with continuous function description[J]. Transactions of China Elec- trotechnical Society, 2024, 39(18): 5719-5731. [4] 魏承志, 练睿, 杨桦, 等. 一种混合型模块化多电平换流器的改进载波移相调制方法[J]. 电力系统自动化, 2016, 40(7): 68-73, 106. Wei Chengzhi, Lian Rui, Yang Hua, et al.An improved phase shifted carrier modulating method for hybrid modular multilevel converter[J]. Automation of Electric Power Systems, 2016, 40(7): 68-73, 106. [5] 任鹏, 涂春鸣, 侯玉超, 等. 考虑异质器件混用与输出电平倍增的混合型MMC及其调控方法[J]. 电力系统自动化, 2024, 48(5): 128-136. Ren Peng, Tu Chunming, Hou Yuchao, et al.Hybrid modular multilevel converter considering hetero- geneous device mixing and output level doubling and its regulation method[J]. Automation of Electric Power Systems, 2024, 48(5): 128-136. [6] 盛况, 任娜, 徐弘毅. 碳化硅功率器件技术综述与展望[J]. 中国电机工程学报, 2020, 40(6): 1741-1752. Sheng Kuang, Ren Na, Xu Hongyi.A recent review on silicon carbide power devices technologies[J]. Proceedings of the CSEE, 2020, 40(6): 1741-1752. [7] 侯玉超, 郭祺, 涂春鸣, 等. 面向输出性能优化的高低频混合型模块化多电平变换器及其调控策略[J]. 电工技术学报, 2024, 39(14): 4467-4479. Hou Yuchao, Guo Qi, Tu Chunming, et al.A high and low frequency hybrid modular multilevel converter for output performance optimization and its control strategy[J]. Transactions of China Electrotechnical Society, 2024, 39(14): 4467-4479. [8] Abarzadeh M, Khan W A, Weise N, et al.A new configuration of paralleled modular ANPC multilevel converter controlled by an improved modulation method for 1 MHz, 1 MW EV charger[J]. IEEE Transactions on Industry Applications, 2021, 57(3): 3164-3178. [9] 李锦, 党恩帅, 范雨顺, 等. 一种碳化硅与硅器件混合型三电平有源中点钳位零电压转换软开关变流器[J]. 电工技术学报, 2024, 39(8): 2496-2510. Li Jin, Dang Enshuai, Fan Yushun, et al.A hybrid three-level active-neutral-point-clamped zero-voltage transition soft-switching converter with silicon carbide and silicon devices[J]. Transactions of China Electrotechnical Society, 2024, 39(8): 2496-2510. [10] 任鹏, 涂春鸣, 侯玉超, 等. 基于Si和SiC器件的混合型级联多电平变换器及其调控优化方法[J]. 电工技术学报, 2023, 38(18): 5017-5028. Ren Peng, Tu Chunming, Hou Yuchao, et al.Research on a hybrid cascaded multilevel converter based on Si and SiC device and its control optimization method[J]. Transactions of China Electrotechnical Society, 2023, 38(18): 5017-5028. [11] Deshpande A, Luo Fang.Practical design con- siderations for a Si IGBT SiC MOSFET hybrid switch: parasitic interconnect influences, cost, and current ratio optimization[J]. IEEE Transactions on Power Electronics, 2019, 34(1): 724-737. [12] 万文超, 段善旭, 余天宝, 等. 有源中点钳位逆变器的损耗均衡和效率优化策略[J]. 电工技术学报, 2022, 37(19): 4872-4882. Wan Wenchao, Duan Shanxu, Yu Tianbao, et al.Loss equalization and efficiency optimization strategy of active neutral point clamped inverter[J]. Transactions of China Electrotechnical Society, 2022, 37(19): 4872-4882. [13] 绳伟辉, 葛琼璇. 七电平有源中点钳位型变流器故障状态运行策略[J]. 电工技术学报, 2019, 34(2): 363-376. Sheng Weihui, Ge Qiongxuan.Fault tolerant operation strategy of seven-level active neutral-point- clamped inverter[J]. Transactions of China Electro- technical Society, 2019, 34(2): 363-376. [14] 张艺明, 王辉, 沈志伟, 等. 利用混合拓扑实现强抗偏移性能的紧凑型电动汽车无线充电系统[J]. 中国电机工程学报, 2022, 42(8): 2979-2986. Zhang Yiming, Wang Hui, Shen Zhiwei, et al.Misalignment-tolerant compact electric vehicle wire- less charging system by using hybrid topology[J]. Proceedings of the CSEE, 2022, 42(8): 2979-2986. [15] 高瞻, 李耀华, 葛琼璇, 等. 适用于大功率三电平中点钳位整流器的SVPWM和DPWM策略研究[J]. 电工技术学报, 2020, 35(23): 4864-4876. Gao Zhan, Li Yaohua, Ge Qiongxuan, et al.Research on SVPWM and DPWM strategies suitable for high power three-level neutral point clamped rectifier[J]. Transactions of China Electrotechnical Society, 2020, 35(23): 4864-4876. [16] Guan Qingxin, Li Chushan, Zhang Yu, et al.An extremely high efficient three-level active neutral- point-clamped converter comprising SiC and Si hybrid power stages[J]. IEEE Transactions on Power Electronics, 2018, 33(10): 8341-8352. [17] Zhang Di, He Jiangbiao, Madhusoodhanan S.Three- level two-stage decoupled active NPC converter with Si IGBT and SiC MOSFET[J]. IEEE Transactions on Industry Applications, 2018, 54(6): 6169-6178. [18] Zhang Di, He Jiangbiao, Pan Di.A megawatt-scale medium-voltage high-efficiency high power density “SiC Si” hybrid three-level ANPC inverter for aircraft hybrid-electric propulsion systems[J]. IEEE Transa- ctions on Industry Applications, 2019, 55(6): 5971-5980. [19] Fu Yongsheng, Ren Haipeng.A novel single-gate driver circuit for SiC Si hybrid switch with variable triggering pattern[J]. IEEE Transactions on Power Electronics, 2021, 36(10): 11953-11966. [20] Peng Zishun, Wang Jun, Liu Zeng, et al.Adaptive gate delay-time control of Si/SiC hybrid switch for efficiency improvement in inverters[J]. IEEE Transa- ctions on Power Electronics, 2021, 36(3): 3437-3449. [21] Liu Haichen, Zhao Tiefu, Gafford J, et al.Design of a 1500V Si IGBT/SiC MOSFET hybrid switch-based three-level active NPC inverter[C]//2021 IEEE Energy Conversion Congress and Exposition (ECCE), Vancouver, BC, Canada, 2021: 168-173. [22] Diao Fei, Lai Pengyu, Guo Feng, et al.A medium- voltage multilevel hybrid converter using 3.3kV silicon carbide MOSFETs and silicon IGBT modules[C]//2023 IEEE Applied Power Electronics Conference and Exposition (APEC), Orlando, FL, USA, 2023: 848-853. [23] 王聪, 刘霞, 程红, 等. 一种三相线电压级联单位功率因数整流器负载不均衡特性分析及电压均衡控制策略[J]. 电工技术学报, 2024, 39(2): 525-540. Wang Cong, Liu Xia, Cheng Hong, et al.Static characteristics and output voltage balance control of a novel line-voltage cascaded three-phase unity power factor rectifier under unbalanced load[J]. Transactions of China Electrotechnical Society, 2024, 39(2): 525-540. [24] Ning Puqi, Zhang Di, Lai Rixin, et al.High- temperature hardware: development of a 10-kW high- temperature, high-power-density three-phase AC-DC- AC SiC converter[J]. IEEE Industrial Electronics Magazine, 2013, 7(1): 6-17.
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