The Influence and Failure Mechanism Analysis of the Load Current on the IGBT Lifetime with Bond Wire Failure
Zhao Zixuan1, Chen Jie1, Deng Erping1,2, Li Anqi1, Huang Yongzhang1,2
1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing 102206 China;
2. NCEPU (Yantai) Power Semiconductor Technology Research Institute Co. Ltd Yantai 264010 China
Through the power cycle experiment of the device, a life model can be established. For example, the CIPS08 formula is often used to predict the life condition under actual working conditions. The maximum junction temperature and junction temperature fluctuation have the greatest impact on life. However, in the power cycling test, different combinations of load current and load pulse duration can achieve the same maximum junction temperature and junction temperature fluctuation. It reflects the strong coupling relationship of these four parameters. In order to further evaluate the contribution of load current and load pulse duration to the lifetime of bonding wire, in this paper, 650V/20A IGBT devices are tested under the combined conditions of the same maximum junction temperature and junction temperature fluctuation but different load current and load pulse duration. Meanwhile, the junction temperature and on-state voltage drop in each cycle are monitored in real time during the test. The results show that the load current has a significant effect on the lifetime of the IGBT device. Larger current will reduce the life of IGBT devices obviously. Furthermore, an electric-mechanical-thermal multi-physics finite element model of the TO package IGBT device is established, considering the elastic-plastic characteristics of the aluminum bonding wire and the surface metal layer. The mechanism of the current effect on the stress of the bonding wire is analyzed, and the fatigue model is introduced. Simulation results are consistent with the test results. This paper can provide guidance for the accurate modeling and the lifetime prediction of bonding wire in IGBT devices.
赵子轩, 陈杰, 邓二平, 李安琦, 黄永章. 负载电流对IGBT器件中键合线的寿命影响和机理分析[J]. 电工技术学报, 2022, 37(1): 244-253.
Zhao Zixuan, Chen Jie, Deng Erping, Li Anqi, Huang Yongzhang. The Influence and Failure Mechanism Analysis of the Load Current on the IGBT Lifetime with Bond Wire Failure. Transactions of China Electrotechnical Society, 2022, 37(1): 244-253.
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