Effect of Temperature and Filler Content on Insulation Properties of Silicone Elastomer/Octavinyl Polyhedral Oligomeric Silsesquioxane Nanocomposites
Wang Qilong1,2, Chen Xiangrong1,2,3,4, Zhang Tianyin1, Wang Enzhe1, Ren Na2
1. College of Electrical Engineering Zhejiang University Hangzhou 310027 China; 2. ZJU-Hangzhou Global Scientific and Technological Innovation Center Hangzhou 311200 China; 3. Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Hangzhou 311200 China; 4. Advanced Electrical International Research Center International Campus Zhejiang University Haining 314400 China
Abstract:The silicon carbide-based wide bandgap (WBG) electronic power modules gradually develop towards a higher current, higher voltage, and miniaturization for realizing higher power density, leading to thermal and electric stress concentration. Therefore, the ideal encapsulation materials need lower permittivity, dielectric loss, electrical conductivity, and high-temperature resistance. The silicone elastomer (SE) is promising to be applied for high-temperature encapsulation in WBG power modules due to its excellent high-temperature resistance and low storage modulus. Polyhedral oligomeric silsesquioxane (POSS) is the known smallest nanofiller, which is widely used in various high-technology areas. Octavinyl polyhedral oligomeric silsesquioxane (OV-POSS) is selected in this paper due to its high reactivity with the SE matrix. This paper investigates the thermal and insulation properties of SE/OV-POSS nanocomposites with different filler contents under 20℃, 120℃, and 220℃. Moreover, the effect of the filler content on the crosslinking network of SE/OV-POSS nanocomposites and the mechanism of the temperature on the charge transport of the nanocomposites are analyzed. For the thermal experiments, field emission scanning electron microscopy, Fourier transform infrared spectroscopy, thermal gravity analysis, and crosslinking degree measurements are performed to characterize the nanofiller distribution and analyze chemical groups, thermal stability, and molecular structure of the nanocomposites. For the electrical experiments, the dielectric spectroscopies, thermally stimulated depolarization current, and DC electrical conductivities at different temperatures are measured to analyze the effect of OV-POSS on the molecular chain relaxation process, trap characteristics, and insulation properties of the nanocomposites with different filler contents. Moreover, the quantum chemical calculations of the pure SE and SE/OV-POSS nanocomposite are performed at different electric fields to acquire the variation total density of states, molecular orbit energy level, dipole moment, and electrostatic potential distribution with the electric field. The results of the thermal and electrical experiments and quantum chemical calculations show that, the thermal degradation temperature T10, crosslinking degree and α relaxation temperature of the SE/OV-POSS nanocomposites firstly increase and then decrease as the filler content increases, and the T10, crosslinking degree and α relaxation temperature of the 3% mass fraction nanocomposites are the largest. The low-frequency dielectric loss of the nanocomposites is smaller than that of the pure SE at 20℃ to 160℃ but larger than that of the pure SE at 220℃ to 300℃. The DC electrical conductivities of the nanocomposites are lower than that of pure SE at 20℃ and 120℃ but higher than that of pure SE at 220℃. The DC conductivity of the 3% mass fraction nanocomposites is the lowest at 20℃ and 120℃ but highest at 220℃. The OV-POSS doping makes the shallow traps deeper in the nanocomposites, and the 3% mass fraction nanocomposite has the largest deep trap density. The band gap of the nanocomposite is significantly reduced at a high electric field, resulting in its valence band electrons being more easily excited to the conduction band at high temperature and high electric field. It can be concluded that, the appropriate amount of OV-POSS can effectively improve the insulation properties of the silicone elastomer at 20℃ and 120℃. A part of the vinyl group of OV-POSS reacts with the molecular chain of the matrix, improving the cross-linking degree and inhibiting the relaxation movement of the matrix molecular chain. The other part of the unreacted vinyl group behaves as deep electron traps, enhancing the insulation properties at 20℃ and 120℃.
王启隆, 陈向荣, 张添胤, 王恩哲, 任娜. 温度和掺杂含量对有机硅弹体/八乙烯基-笼型倍半硅氧烷纳米复合材料绝缘性能的影响[J]. 电工技术学报, 2023, 38(5): 1139-1153.
Wang Qilong, Chen Xiangrong, Zhang Tianyin, Wang Enzhe, Ren Na. Effect of Temperature and Filler Content on Insulation Properties of Silicone Elastomer/Octavinyl Polyhedral Oligomeric Silsesquioxane Nanocomposites. Transactions of China Electrotechnical Society, 2023, 38(5): 1139-1153.
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