电工技术学报  2023, Vol. 38 Issue (5): 1139-1153    DOI: 10.19595/j.cnki.1000-6753.tces.221262
“新能源电力系统装备绝缘介电性能测试与表征”专题(Ⅱ)(特约主编:李庆民 陈向荣 李进 王威望) |
温度和掺杂含量对有机硅弹体/八乙烯基-笼型倍半硅氧烷纳米复合材料绝缘性能的影响
王启隆1,2, 陈向荣1,2,3,4, 张添胤1, 王恩哲1, 任娜2
1.浙江大学电气工程学院 杭州 310027;
2.浙江大学杭州国际科创中心 杭州 311200;
3.浙江省宽禁带功率半导体材料与器件重点实验室(浙江大学杭州科创中心) 杭州 311200;
4.浙江大学先进电气国际研究中心 海宁 314400
Effect of Temperature and Filler Content on Insulation Properties of Silicone Elastomer/Octavinyl Polyhedral Oligomeric Silsesquioxane Nanocomposites
Wang Qilong1,2, Chen Xiangrong1,2,3,4, Zhang Tianyin1, Wang Enzhe1, Ren Na2
1. College of Electrical Engineering Zhejiang University Hangzhou 310027 China;
2. ZJU-Hangzhou Global Scientific and Technological Innovation Center Hangzhou 311200 China;
3. Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Hangzhou 311200 China;
4. Advanced Electrical International Research Center International Campus Zhejiang University Haining 314400 China
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摘要 为了研究温度和掺杂含量对有机硅弹体/八乙烯基-笼型倍半硅氧烷(SE/OV-POSS)纳米复合材料绝缘和热学性能的影响,该文制备了纯有机硅弹体及不同掺杂含量的SE/OV-POSS纳米复合材料,对材料进行了SEM断面形貌表征、傅里叶红外光谱测量、热重分析、交联度实验、热刺激去极化电流测试、不同温度下介电谱和直流电导率测量,以及不同电场强度下的量子化学计算,分析了掺杂含量对SE/OV-POSS纳米复合材料交联网络的影响,以及温度对纳米复合材料电荷传输的作用机制。结果表明:掺杂质量分数为3%的OV-POSS可以与有机硅弹体基体形成密集的交联网状结构,有效抑制基体分子长链段发生介电弛豫运动,使纳米复合材料的热分解温度、交联度、α弛豫温度和陷阱能级显著增大;在20℃和120℃下,OV-POSS的未反应乙烯基和无机内核在纳米复合材料中分别起到深电子陷阱和深空穴陷阱作用,阻碍电极注入的载流子在材料内部传输,导致纳米复合材料的直流电导率小于纯有机硅弹体;然而在220℃下,纳米复合材料内部的大量热电子激发导致其绝缘特性的劣化。上述研究结果表明,适量掺杂的OV-POSS可以有效提升有机硅弹体在20℃和120℃下的绝缘性能。
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王启隆
陈向荣
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任娜
关键词 有机硅弹体八乙烯基-笼型倍半硅氧烷(OV-POSS)纳米复合材料绝缘性能温度    
Abstract:The silicon carbide-based wide bandgap (WBG) electronic power modules gradually develop towards a higher current, higher voltage, and miniaturization for realizing higher power density, leading to thermal and electric stress concentration. Therefore, the ideal encapsulation materials need lower permittivity, dielectric loss, electrical conductivity, and high-temperature resistance. The silicone elastomer (SE) is promising to be applied for high-temperature encapsulation in WBG power modules due to its excellent high-temperature resistance and low storage modulus. Polyhedral oligomeric silsesquioxane (POSS) is the known smallest nanofiller, which is widely used in various high-technology areas. Octavinyl polyhedral oligomeric silsesquioxane (OV-POSS) is selected in this paper due to its high reactivity with the SE matrix. This paper investigates the thermal and insulation properties of SE/OV-POSS nanocomposites with different filler contents under 20℃, 120℃, and 220℃. Moreover, the effect of the filler content on the crosslinking network of SE/OV-POSS nanocomposites and the mechanism of the temperature on the charge transport of the nanocomposites are analyzed.
For the thermal experiments, field emission scanning electron microscopy, Fourier transform infrared spectroscopy, thermal gravity analysis, and crosslinking degree measurements are performed to characterize the nanofiller distribution and analyze chemical groups, thermal stability, and molecular structure of the nanocomposites. For the electrical experiments, the dielectric spectroscopies, thermally stimulated depolarization current, and DC electrical conductivities at different temperatures are measured to analyze the effect of OV-POSS on the molecular chain relaxation process, trap characteristics, and insulation properties of the nanocomposites with different filler contents. Moreover, the quantum chemical calculations of the pure SE and SE/OV-POSS nanocomposite are performed at different electric fields to acquire the variation total density of states, molecular orbit energy level, dipole moment, and electrostatic potential distribution with the electric field.
The results of the thermal and electrical experiments and quantum chemical calculations show that, the thermal degradation temperature T10, crosslinking degree and α relaxation temperature of the SE/OV-POSS nanocomposites firstly increase and then decrease as the filler content increases, and the T10, crosslinking degree and α relaxation temperature of the 3% mass fraction nanocomposites are the largest. The low-frequency dielectric loss of the nanocomposites is smaller than that of the pure SE at 20℃ to 160℃ but larger than that of the pure SE at 220℃ to 300℃. The DC electrical conductivities of the nanocomposites are lower than that of pure SE at 20℃ and 120℃ but higher than that of pure SE at 220℃. The DC conductivity of the 3% mass fraction nanocomposites is the lowest at 20℃ and 120℃ but highest at 220℃. The OV-POSS doping makes the shallow traps deeper in the nanocomposites, and the 3% mass fraction nanocomposite has the largest deep trap density. The band gap of the nanocomposite is significantly reduced at a high electric field, resulting in its valence band electrons being more easily excited to the conduction band at high temperature and high electric field.
It can be concluded that, the appropriate amount of OV-POSS can effectively improve the insulation properties of the silicone elastomer at 20℃ and 120℃. A part of the vinyl group of OV-POSS reacts with the molecular chain of the matrix, improving the cross-linking degree and inhibiting the relaxation movement of the matrix molecular chain. The other part of the unreacted vinyl group behaves as deep electron traps, enhancing the insulation properties at 20℃ and 120℃.
Key wordsSilicone elastomer    octavinyl polyhedral oligomeric silsesquioxane (OV-POSS)    nanocomposites    insulation properties    temperature   
收稿日期: 2022-06-30     
PACS: TM211  
基金资助:国家自然科学基金项目(52007165)、浙江省自然科学基金重点项目(LZ22E070001)和浙江大学“百人计划”(自然科学 A类)资助
通讯作者: 陈向荣 男,1982年生,研究员,博士生导师,研究方向为先进电气材料与高压绝缘测试技术、先进电力装备与新型电力系统、高电压新技术。E-mail:chenxiangrongxh@zju.edu.cn   
作者简介: 王启隆 男,1998年生,博士研究生,研究方向为先进电工材料及高压绝缘测试技术。E-mail:wangqilong_ql@zju.edu.cn
引用本文:   
王启隆, 陈向荣, 张添胤, 王恩哲, 任娜. 温度和掺杂含量对有机硅弹体/八乙烯基-笼型倍半硅氧烷纳米复合材料绝缘性能的影响[J]. 电工技术学报, 2023, 38(5): 1139-1153. Wang Qilong, Chen Xiangrong, Zhang Tianyin, Wang Enzhe, Ren Na. Effect of Temperature and Filler Content on Insulation Properties of Silicone Elastomer/Octavinyl Polyhedral Oligomeric Silsesquioxane Nanocomposites. Transactions of China Electrotechnical Society, 2023, 38(5): 1139-1153.
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