Simulation of Influence of Unbalanced Clamping Force on Electro-Thermal Characteristics of Press-Pack IGBT Devices
Zhou Jing1, Kang Shengyang1, Li Hui1, Yao Ran1, Li Jinyuan2
1. State Key Laboratory of Power Transmission Equipment & System Security and New Technology Chongqing University Chongqing 400044 China; 2. Global Energy Interconnection Research Institute Beijing 102209 China
Abstract：Press-pack IGBT (PPI) devices, which have large-scale parallel multi-chip, are the key components of flexible DC transmission equipment. Due to the design and manufacture of the PPI devices, the internal clamping force on the parallel chips may be unbalanced, while the unbalanced internal clamping force cannot be tested directly. In this paper, a method to simulate the influence of the unbalanced internal clamping force on multi-chip module by a parallel finite element model of single-chip devices is proposed. Firstly, based on the effect of pressure on single-chip devices, a parallel finite element model of PPI is established. The distribution of the electro-thermal characteristics in parallel multi-chip devices under different internal clamping force is then simulated. Secondly, a test experiment platform with two single PPI devices running in parallel was established to verify the parallel simulation model. Finally, the parallel model was used in the simulation of the actual PPI module of 3 300V/1 500A, and the influence of the unbalanced clamping force of the multi-chip parallel module on the electro-thermal characteristics was analyzed. The results show that the unbalanced clamping force affects the electrical and thermal characteristics of the multi-chip parallel device. The thermal resistance changing with the clamping force is a significant factor in the temperature distribution of the parallel device. With the increase of the pressure inhomogeneity, the difference in electro-thermal characteristics among the parallel multi-chips becomes more obvious. Furthermore, the temperature difference caused by the unbalanced clamping force increases with the aging of the device, which affects the reliability of the device seriously.
周静, 康升扬, 李辉, 姚然, 李金元. 内部压力不均对压接式IGBT器件电热特性的影响分析[J]. 电工技术学报, 2019, 34(16): 3408-3415.
Zhou Jing, Kang Shengyang, Li Hui, Yao Ran, Li Jinyuan. Simulation of Influence of Unbalanced Clamping Force on Electro-Thermal Characteristics of Press-Pack IGBT Devices. Transactions of China Electrotechnical Society, 2019, 34(16): 3408-3415.
[1] Deng Erping, Zhao Zhibin, Zhang Peng, et al.Optimization of the thermal contact resistance within press pack IGBTs[J]. Microelectronics Reliability, 2017, 69: 17-28. [2] 赵志斌, 邓二平, 张朋, 等. 换流阀用与直流断路器用压接型IGBT器件差异分析[J]. 电工技术学报, 2017, 32(19): 125-133. Zhao Zhibin, Deng Erping, Zhang Peng, et al.Review of the difference between the press pack IGBT using for converter valve and for DC breaker[J]. Transa- ctions of China Electrotechnical Society, 2017, 32(19): 125-133. [3] 张经纬, 邓二平, 赵志斌, 等. 压接型IGBT器件单芯片子模组疲劳失效的仿真[J]. 电工技术学报, 2018, 33(18): 4277-4285. Zhang Jingwei, Deng Erping, Zhao Zhibin, et al.Simulation on fatigue failure of single IGBT chip module of press-pack IGBTs[J]. Transactions of China Electrotechnical Society, 2018, 33(18): 4277-4285. [4] Deng Erping, Zhao Zhibin, Lin Zhongkang, et al.Influence of temperature on the pressure distribution within press pack IGBTs[J]. IEEE Transactions on Power Electronics, 2017, 30(7): 6048-6059. [5] 邓二平, 赵志斌, 张朋, 等. 压接型IGBT器件内部压力分布[J]. 电工技术学报, 2017, 32(6): 201-208. Deng Erping, Zhao Zhibin, Zhang Peng, et al.Clamping force distribution within press pack IGBTs[J]. Transactions of China Electrotechnical Society, 2017, 32(6): 201-208. [6] Hasmasan A A,Busca C,Teodorescu R,et al.Modelling the clamping force distribution among chips in press-pack IGBTs using the finite element method[C]//3rd IEEE International Symposium on Power Electronics for Distributed Generation Systems, Aalborg, Denmark, 2012: 788-793. [7] Hasmasan A A, Busca C, Teodorescu R.Electro- thermo-mechanical analysis of high-power press- pack insulated gate bipolar transistors under various mechanical clamping conditions[J]. IEE Journal of Industry Applications, 2014, 3(3): 192-197. [8] Poller T, Basler T, Hernes M, et al.Mechanical analysis of press-pack IGBTs[J]. Microelectronics Reliability, 2012, 52(9-10): 2397-2402. [9] Pirondi A, Nicoletto G, Cova P, et al.Thermo- mechanical simulation of a multichip press-packed IGBT[J]. MRS Proceedings, 1997, 483(12): 2303-2307. [10] Poller T, D'Arco S, Hernes M, et al. Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs[J]. Micro- electronics Reliability, 2013, 53(9-11): 1755-1759. [11] Pirondi A, Nicoletto G, Cova P, et al.Thermo- mechanical finite element analysis in press-packed IGBT design[J]. Microelectronics Reliability, 2000, 40(7): 1163-1172. [12] 温家良, 葛俊, 潘艳, 等. 直流电网用电力电子器件发展与展望[J]. 电网技术, 2016, 40(3): 663-669. Wen Jialiang, Ge Jun, Pan Yan, et al.Development and expectation of power electronic devices for DC grid[J]. Power System Technology, 2016, 40(3): 663-669. [13] Poller T, Lutz J, D'Arco S, et al. Determination of the thermal and electrical contact resistance in press-pack IGBTs[C]//2013 15th European Conference on Power Electronics and Applications, Lille, 2013: 1-9. [14] Rajaguru P, Lu H, Bailey C, et al.Electro-thermo- mechanical modeling and analysis of the press pack diode in power electronics[C]//International Work- shop on Thermal Investigations of ICS and Systems, Paris, 2015: 1-6. [15] Gonzalez J O, Alatise O, Aliyu A, et al.Evaluation of SiC schottky diodes using pressure contacts[J]. IEEE Transactions on Industrial Electronics, 2017, 64(10): 8213-8223.
2019, Vol. 34 
