电工技术学报  2017, Vol. 32 Issue (24): 42-52    DOI: 10.19595/j.cnki.1000-6753.tces.L70738
电机与电器 |
基于MOSFET的限流式固态断路器及其过电压抑制
卢其威, 高志宣, 滕尚甫, 雷婷, 何棒棒
中国矿业大学(北京)机电与信息工程学院 北京 100083
Current Limiting Solid State Circuit Breaker Based on MOSEFT and Its Over Voltage Suppression
Lu Qiwei, Gao Zhixuan, Teng Shangfu, Lei Ting, He Bangbang
School of Mechanical Electronic & Information Engineering China University of Mining and Technology (Beijing) Beijing 100083 China
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摘要 针对低压交流场合,对基于功率MOSFET的限流式固态断路器关断过程中的开关管两端电压、主电路中电流变化规律进行详细的理论分析,并提出一种过电压抑制电路,在分析其工作原理的基础上,给出电路参数选择的理论依据。最后,研制一台额定输入电压为220V、限流值为150A的基于MOSFET并联的固态断路器,并进行实验验证。对研发应用在低压交流场合的限流式固态断路器起到较好的理论指导作用。
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何棒棒
关键词 固态断路器低压限流过电压分析MOSFET    
Abstract:Aiming at the occasions of low-voltage AC circuit, this paper theoretically analyzes the voltage across the switch and the current variation characteristics of the power MOSFET based limiting solid-state circuit breaker during the turning-off period. An over-voltage suppression circuit is proposed, and the working principle as well as the theoretical basis of the parameters selection is analyzed. Finally, the theoretical analyses are verified by the experiments, which provides a good guidance of developing current limiting solid-state circuit breaker in the low voltage AC circuit.
Key wordsSolid state circuit breaker (SSCB)    low voltage    current limiting    over-voltage analysis    MOSFET   
     出版日期: 2018-01-16
PACS: TM561  
作者简介: 高志宣 男,1991年生,博士研究生,研究方向为电力电子技术及其应用。E-mail: gzx8577@163.com
引用本文:   
卢其威, 高志宣, 滕尚甫, 雷婷, 何棒棒. 基于MOSFET的限流式固态断路器及其过电压抑制[J]. 电工技术学报, 2017, 32(24): 42-52. Lu Qiwei, Gao Zhixuan, Teng Shangfu, Lei Ting, He Bangbang. Current Limiting Solid State Circuit Breaker Based on MOSEFT and Its Over Voltage Suppression. Transactions of China Electrotechnical Society, 2017, 32(24): 42-52.
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https://dgjsxb.ces-transaction.com/CN/10.19595/j.cnki.1000-6753.tces.L70738          https://dgjsxb.ces-transaction.com/CN/Y2017/V32/I24/42