Design of SiC MOSFET Crosstalk Suppression Based on Improved Three-Level Topology
Geng Yuyu1, Gou Xinyi1, Qu Changqi2
1. School of Electrical and Electronic Engineering Chongqing University of Technology Chongqing 400054 China; 2. China Aviation Industry General Technology Research Institute Beijing 100028 China
Abstract：Silicon carbide（SiC）MOSFETs are widely used in power electronic converters due to their advantages, such as high switching speed. However, high dv/dt and di/dt are prone to causing crosstalk in half-bridge circuits, leading to false turn-on or device damage. Existing crosstalk suppression methods have limitations, including reduced switching speed, complex control, or one-sided suppression. Therefore, this paper proposes an improved crosstalk suppression drive circuit. Building on the three-level circuit topology, the scheme introduces an auxiliary low-impedance branch composed of an N-channel MOSFET in series with an auxiliary capacitor. Because of its intelligent self-driving capability, the branch requires no additional independent control signals and operates automatically only when the power switch is off, thereby providing an efficient bypass path for the Miller current that causes forward crosstalk. Simultaneously, because this branch effectively manages forward crosstalk, the turn-off negative voltage can be reduced. This elevation significantly reduces conduction loss across the gate resistor during the intermediate-level clamping interval, achieving an optimal balance between loss and suppression performance. This paper begins with an in-depth analysis of the intrinsic mechanism of crosstalk generation in half-bridge circuits, detailing the paths of displacement current and their impact on the gate-source voltage during different switching transients. The operational principles of the proposed circuit throughout the entire switching cycle are provided using a stage-by-stage modal analysis. The study also offers design guidelines and a theoretical basis for key components. For instance, the value of the auxiliary capacitor must balance suppression effectiveness against its impact on switching characteristics, while the delay circuit's time constant must ensure that the clamping function activates within a safe timing window. Finally, experimental validation was conducted using a double-pulse test platform. The results demonstrate that, compared to conventional drive circuits and traditional three-level circuits, the proposed improved circuit maintains comparable switching speed and losses while exhibiting superior performance in suppressing the forward crosstalk voltage spike. Additionally, it effectively reduces gate resistor losses. This solution addresses the performance trade-off, providing a practical and efficient approach to enhance the operational reliability of SiC MOSFETs in high-frequency applications.
[1] 姜杰俊, 刘青, 韩伟健, 等. 宽温域下的SiC MOSFET开关暂态建模方法研究[J]. 电工技术学报, 2025, 40(20): 6591-6603. Jiang Jiejun, Liu Qing, Han Weijian, et al.Research on switching transient modeling method of SiC MOSFET in wide temperature range[J]. Transactions of China Electrotechnical Society, 2025, 40(20): 6591-6603. [2] Zhang Lei, Yuan Xibo, Wu Xiaojie, et al.Perfor-mance evaluation of high-power SiC MOSFET modules in comparison to Si IGBT modules[J]. IEEE Transactions on Power Electronics, 2019, 34(2): 1181-1196. [3] 张岩, 薛少鹏, 李阳, 等. 安全工作区外重复过电压硬开关下SiC MOSFET参数退化特性与机理[J]. 电工技术学报, 2025, 40(16): 5029-5043. Zhang Yan, Xue Shaopeng, Li Yang, et al.Degradation of SiC MOSFETs under repetitive overvoltage and hard-switching stress outside the safe operating area[J]. Transactions of China Electro-technical Society, 2025, 40(16): 5029-5043. [4] Chen Cai, Luo Fang, Kang Yong.A review of SiC power module packaging: layout, material system and integration[J]. CPSS Transactions on Power Elec-tronics and Applications, 2017, 2(3): 170-186. [5] 黄天琪, 刘永前. 基于电-热-结构耦合分析的SiC MOSFET可靠性研究[J]. 电气技术, 2024, 25(8): 27-34. Huang Tianqi, Liu Yongqian.Reliability study of SiC MOSFET based on electro-thermo-structural coupling analysis[J]. Electrical Engineering, 2024, 25(8): 27-34. [6] 巴腾飞, 李艳, 梁美. 寄生参数对SiC MOSFET栅源极电压影响的研究[J]. 电工技术学报, 2016, 31(13): 64-73. Ba Tengfei, Li Yan, Liang Mei.The effect of parasitic parameters on gate-source voltage of SiC MOSFET[J]. Transactions of China Electrotechnical Society, 2016, 31(13): 64-73. [7] 陈滢, 李成敏, 鲁哲别, 等. 半桥结构中的SiC MOSFET串扰电压建模研究[J]. 中国电机工程学报, 2020, 40(6): 1775-1787. Chen Ying, Li Chengmin, Lu Zhebie, et al.Modeling of SiC MOSFET crosstalk voltage in half bridge circuit[J]. Proceedings of the CSEE, 2020, 40(6): 1775-1787. [8] Zhao Jun, Wu Liang, Li Zhenyu, et al.Analysis and suppression for crosstalk in SiC MOSFET turn-off transient[C]//2020 IEEE 9th International Power Elec-tronics and Motion Control Conference（IPEMC2020-ECCE Asia), Nanjing, China, 2020: 1145-1150. [9] Zhou Hao, Ye Chunxian, Zhan Xubiao, et al.Designing a SiC MOSFETs gate driver with high dv/dt immunity and rapid short circuit protection for xEV drivetrain inverter[C]//2019 22nd International Conference on Electrical Machines and Systems（ICEMS), 2019: 1-5. [10] Laird I, Yuan Xibo.Analysing the crosstalk effect of SiC MOSFETs in half-bridge arrangements[C]//2019 IEEE Energy Conversion Congress and Exposition（ECCE), Baltimore, MD, USA, 2019: 367-374. [11] Li Hong, Jiang Yanfeng, Qiu Zhidong, et al.A predictive algorithm for crosstalk peaks of SiC MOSFET by considering the nonlinearity of gate-drain capacitance[J]. IEEE Transactions on Power Electronics, 2021, 36(3): 2823-2834. [12] 梁美, 李艳, 郑琼林, 等. 桥式电路中不同封装SiC MOSFET串扰问题分析及低栅极关断阻抗的驱动电路[J]. 电工技术学报, 2017, 32(18): 162-174. Liang Mei, Li Yan, Zheng Trillion Q, et al.Analysis for crosstalk of SiC MOSFET with different packages in a phase-leg configuration and a low gate turn-off impedance driver[J]. Transactions of China Electro-technical Society, 2017, 32(18): 162-174. [13] Zhang Zheyu, Dix J, Wang F F, et al.Intelligent gate drive for fast switching and crosstalk suppression of SiC devices[J]. IEEE Transactions on Power Elec-tronics, 2017, 32(12): 9319-9332. [14] Kelley R, Rees F, Schwob D.Optimized gate driver for enhancement-mode SiC JFET[C]//International Exhibition & Conference for Power Electronics Intelligent Motion Power Quality, Nuremberg, Germany, 2009. [15] 张斌锋, 许津铭, 钱强, 等. SiC MOSFET特性及其应用的关键技术分析[J]. 电源学报, 2016, 14(4): 39-51. Zhang Binfeng, Xu Jinming, Qian Qiang, et al.Analysis on characteristics of SiC MOSFET and key techniques of its applications[J]. Journal of Power Supply, 2016, 14(4): 39-51. [16] Zhang Zheyu, Wang F, Tolbert L M, et al.Active gate driver for crosstalk suppression of SiC devices in a phase-leg configuration[J]. IEEE Transactions on Power Electronics, 2013, 29(4): 1986-1997. [17] Wang Panbao, Zhang Linzhi, Lu Xiaonan, et al.An improved active crosstalk suppression method for high-speed SiC MOSFETs[J]. IEEE Transactions on Industry Applications, 2019, 55(6): 7736-7744. [18] 李辉, 黄樟坚, 廖兴林, 等. 一种抑制SiC MOSFET桥臂串扰的改进门极驱动设计[J]. 电工技术学报, 2019, 34(2): 275-285. Li Hui, Huang Zhangjian, Liao Xinglin, et al.An improved gate drive design to suppress the crosstalk of SiC MOSFET bridge arm[J]. Transactions of China Electrotechnical Society, 2019, 34(2): 275-285. [19] Shao Tiancong, Zheng T Q, Li Hong, et al.The active gate drive based on negative feedback mechanism for fast switching and crosstalk suppression of SiC devices[J]. IEEE Transactions on Power Electronics, 2022, 37(6): 6739-6754. [20] Wang Jianjing, Chung H S.A novel RCD level shifter for elimination of spurious turn-on in the bridge-leg configuration[J]. IEEE Transactions on Power Elec-tronics, 2015, 30(2): 976-984. [21] Liu Chunhui, Zhang Zhengda, Liu Yifu, et al.Smart self-driving multilevel gate driver for fast switching and crosstalk suppression of SiC MOSFETs[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 442-453. [22] 黄勇胜, 张建忠, 王宁. 一种SiC MOSFET串扰抑制的谐振辅助驱动电路[J]. 电工技术学报, 2022, 37(12): 3004-3015. Huang Yongsheng, Zhang Jianzhong, Wang Ning.A resonant auxiliary drive circuit for SiC MOSFET to suppress crosstalk[J]. Transactions of China Elec-trotechnical Society, 2022, 37(12): 3004-3015. [23] Li Chengmin, Lu Zhebie, Chen Ying, et al.High off-state impedance gate driver of SiC MOSFETs for crosstalk voltage elimination considering common-source inductance[J]. IEEE Transactions on Power Electronics, 2020, 35(3): 2999-3011.
2026, Vol. 41 
