高压大功率弹性压接型IGBT器件封装绝缘结构中的电场瞬态特性研究

doi:10.19595/j.cnki.1000-6753.tces.221474

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摘要压接型绝缘栅双极型晶体管（IGBT）器件是支撑柔性直流装备研制的核心器件,弹性压接型IGBT器件能更好地实现器件中各并联芯片的压力均衡,在电网应用场景中前景广阔。然而,对于高压器件来说,器件内部的绝缘问题是器件研制过程中面临的主要挑战之一,因此,有必要在实际工况下分析器件绝缘结构中的瞬态电场分布,以指导绝缘设计。本文针对弹性压接型IGBT器件内部的复合绝缘结构,采用时域边界电场约束方程法,分别计算了单次关断工况和重复性导通关断工况下弹性压接型IGBT器件子模组封装绝缘结构中的瞬态电场分布,结果表明两种工况下,封装绝缘结构中最大电场强度均出现在芯片/聚酰亚胺（PI）钝化层界面上,且由于介质分界面两侧的绝缘材料介电常数和电导率参数不匹配,分界面上将会积累电荷。界面电荷密度随着时间逐渐增大,且界面电荷会影响电场分布,使得子模组中最大场强的模值和位置随时间发生变化。同时,单次关断工况下,最大电场的模值会更大。此外,本文提出通过改变器件中使用的绝缘材料,提高界面处的材料参数匹配程度,可以实现对子模组内的电场分布的改善,结果表明本文所提方法能显著降低器件内部最大电场强度的模值。本文的研究为弹性压接型IGBT器件的封装绝缘结构设计和优化提供了参考。

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关键词 ：弹性压接型IGBT, 时域有限元法, 电准静态场, 单次关断工况, 重复性导通关断工况, 电场调控方法

Abstract：With the development of flexible DC transmission technology, high-voltage and high-power IGBT (Insulated Gate Bipolar Transistor) has become an indispensable core component in DC power grid. Compliant press-pack IGBT has a wide application prospect in power grid because of its uniform pressure distribution and superior insulation performance. The calculation of the electric field distribution inside the device is an important step to improve its insulation performance. However, the transient electric field distribution under actual working conditions were not analyzed in previous studies. Therefore, the electric field distribution of the device under two working conditions is simulated, and a method to improve the matching degree of parameters between the insulating media is proposed in this paper, which can reduce the maximum electric field intensity in the device.
Firstly, based on the actual working conditions of the device, the 2D finite element model is established, and the governing equations and boundary conditions of the submodule are determined. Secondly, by using the weighted residual method, the weak form of the governing equation is obtained, which is discretized in space and time. Then all nodes in the field are reordered, and the equation is decomposed into two to solve the transient potential and the normal component of the electric field intensity on the boundary respectively. Thirdly, the electric field distribution in the IGBT device is calculated under the conditions of single turn-off and repeatable turn-on and turn-off condition. Finally, a method of improving the matching degree of dielectric constant and electrical conductivity of the insulating material in the submodule is proposed to reduce the maximum electric field.
The results show that the maximum electric field intensity in the submodule always appears at the interface of chip/PI passivation layer. Because the dielectric parameters of the insulating materials on both sides of this interface do not match, charges will accumulate. The interfacial charge affects the electric field distribution, causing the value and position of the maximum field intensity to change with time. In addition, the maximum electric field intensity under the single turn-off condition is larger than that under the repeated turn-off and turn-off conditions. Therefore, specific application conditions should be considered in the insulation design of devices. The silicon nitrous oxide material (SiO_xN_y) is proposed as the passivation layer to recalculate the electric field of the submodule under single turn-off condition. The results of recalculation show that the maximum electric field appears at the joint point of chip/passivation layer/aluminized layer and does not change with time. The maximum electric field intensity of SiO_xN_y as the passivation layer is 42.7% lower than that of PI as the passivation layer. This is due to the greater conductivity of SiO_xN_y, which better matches the silicon parameters of the chip.
The following conclusions can be drawn from the analysis: (1) In the transient process of single turn-off and repeatable turn-on and turn-off condition, there is charge aggregation on the dielectric interface in the sub-module, which leads to local enhancement of the electric field. (2) There is a greater risk of insulation problems in the single-turn off condition, so it is crucial to pay more attention to the compliant press-pack IGBT devices in this condition. (3) By changing the passivation layer material, the matching degree of insulation material can be improved, which can reduce the maximum field intensity in the submodule.

Key words： Compliant press-pack IGBT time domain finite element method electric quasi-static field single turn-off condition repeatable turn-on and turn-off condition electric field control method

收稿日期: 2022-07-30

PACS:

TM211

基金资助:国家自然科学基金面上项目资助（52077073）

通讯作者: 李学宝男,1988年生,副教授,博士生导师,研究方向为高压大功率电力电子器件封装。E-mail：lxb08357x@ncepu.edu.cn

作者简介: 刘思佳女,1997年生,硕士研究生,研究方向为高压大功率电力电子器件的封装绝缘技术,电磁场数值计算。E-mail：Liusijia@ncepu.edu.cn

引用本文:

刘思佳, 文腾, 李学宝, 王亮, 崔翔. 高压大功率弹性压接型IGBT器件封装绝缘结构中的电场瞬态特性研究[J]. 电工技术学报, 0, (): 65-65. Liu Sijia, Wen Teng, Li Xuebao, Wang Liang, Cui Xiang. Electric Field Transient Characteristics of High Voltage and High Power Compliant Press-Pack IGBT Device Package Insulation Structure. Transactions of China Electrotechnical Society, 0, (): 65-65.

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