Electric Field Transient Characteristics of High Voltage and High Power Compliant Press-Pack IGBT Device Package Insulation Structure
Liu Sijia1, Wen Teng1,2, Li Xuebao1, Wang Liang3, Cui Xiang1
1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing 102206 China; 2. China Electric Power Planning & Engineering Institute Beijing 100120 China; 3. State Key Laboratory of Advanced Power Transmission Technology Beijing Institute of Smart Energy Beijing 100085 China
Abstract：With the development of flexible DC transmission technology, high-voltage and high-power IGBT (Insulated Gate Bipolar Transistor) has become an indispensable core component in DC power grid. Compliant press-pack IGBT has a wide application prospect in power grid because of its uniform pressure distribution and superior insulation performance. The calculation of the electric field distribution inside the device is an important step to improve its insulation performance. However, the transient electric field distribution under actual working conditions were not analyzed in previous studies. Therefore, the electric field distribution of the device under two working conditions is simulated, and a method to improve the matching degree of parameters between the insulating media is proposed in this paper, which can reduce the maximum electric field intensity in the device. Firstly, based on the actual working conditions of the device, the 2D finite element model is established, and the governing equations and boundary conditions of the submodule are determined. Secondly, by using the weighted residual method, the weak form of the governing equation is obtained, which is discretized in space and time. Then all nodes in the field are reordered, and the equation is decomposed into two to solve the transient potential and the normal component of the electric field intensity on the boundary respectively. Thirdly, the electric field distribution in the IGBT device is calculated under the conditions of single turn-off and repeatable turn-on and turn-off condition. Finally, a method of improving the matching degree of dielectric constant and electrical conductivity of the insulating material in the submodule is proposed to reduce the maximum electric field. The results show that the maximum electric field intensity in the submodule always appears at the interface of chip/PI passivation layer. Because the dielectric parameters of the insulating materials on both sides of this interface do not match, charges will accumulate. The interfacial charge affects the electric field distribution, causing the value and position of the maximum field intensity to change with time. In addition, the maximum electric field intensity under the single turn-off condition is larger than that under the repeated turn-off and turn-off conditions. Therefore, specific application conditions should be considered in the insulation design of devices. The silicon nitrous oxide material (SiOxNy) is proposed as the passivation layer to recalculate the electric field of the submodule under single turn-off condition. The results of recalculation show that the maximum electric field appears at the joint point of chip/passivation layer/aluminized layer and does not change with time. The maximum electric field intensity of SiOxNy as the passivation layer is 42.7% lower than that of PI as the passivation layer. This is due to the greater conductivity of SiOxNy, which better matches the silicon parameters of the chip. The following conclusions can be drawn from the analysis: (1) In the transient process of single turn-off and repeatable turn-on and turn-off condition, there is charge aggregation on the dielectric interface in the sub-module, which leads to local enhancement of the electric field. (2) There is a greater risk of insulation problems in the single-turn off condition, so it is crucial to pay more attention to the compliant press-pack IGBT devices in this condition. (3) By changing the passivation layer material, the matching degree of insulation material can be improved, which can reduce the maximum field intensity in the submodule.
刘思佳, 文腾, 李学宝, 王亮, 崔翔. 高压大功率弹性压接型IGBT器件封装绝缘结构中的电场瞬态特性[J]. 电工技术学报, 2023, 38(23): 6253-6265.
Liu Sijia, Wen Teng, Li Xuebao, Wang Liang, Cui Xiang. Electric Field Transient Characteristics of High Voltage and High Power Compliant Press-Pack IGBT Device Package Insulation Structure. Transactions of China Electrotechnical Society, 2023, 38(23): 6253-6265.
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2023, Vol. 38 
