碳化硅功率模块封装技术综述

doi:10.19595/j.cnki.1000-6753.tces.221214

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摘要

碳化硅作为宽禁带半导体的代表,理论上具有极其优异的性能,有望在大功率电力电子变换器中替换传统硅IGBT,大幅提升变换器的效率以及功率密度等性能。但是目前商用碳化硅功率模块仍然沿用传统硅IGBT模块的封装技术,面临着高频寄生参数大、散热能力不足、耐温低、绝缘强度不足等问题,限制了碳化硅半导体优良性能的发挥。为了解决上述问题,充分发挥碳化硅芯片潜在的巨大优势,近年来出现了许多针对碳化硅功率模块的新型封装技术和方案,重点关注碳化硅功率模块封装中面临的电、热以及绝缘方面的挑战。本文从优化设计方法所依据的基本原理出发,对各种优化技术进行分类总结,涵盖了降低高频寄生电感、增强散热性能、提高耐高温能力以及提升绝缘强度的一系列相关技术。在此基础上,对相关的可靠性问题进行总结。最后基于碳化硅功率模块封装技术的现状,对相关技术的未来发展进行了展望。

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	王来利
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关键词 ：碳化硅, 功率模块, 寄生电感, 散热能力, 耐高温能力, 绝缘能力, 可靠性

Abstract：

ilicon carbide devices, representative of wide-bandgap semiconductors, are of extremely excellent performance in theory and are promising to replace silicon IGBTs in high-power power electronic converters. They can greatly improve the efficiency and power density of the converters. However, at present, commercial silicon carbide power modules employ the packaging technology of silicon IGBT modules, which features large high-frequency parasitic inductance, insufficient heat dissipation capacity, low-temperature resistance, and insufficient dielectric strength. This limits the excellent performance of silicon carbide semiconductors. To address the issues and make full use ofthe advantages of silicon carbide chips, new packaging technologies and solutions for silicon carbide power modules have emerged in recent years. They focus on dealing with challenges of the electrical, thermal and insulation performancesof silicon carbide power modules.According tothe basic theoryof optimization methods, this paper classifies and summarizes various optimization techniques about reducing high-frequency parasitic inductance, enhancing heat dissipation performance, improving high-temperature resistance, and increasing dielectric strength. Then the related reliability issues are summarized. Finally, the future development of related technologies is prospected.

Key words： Silicon carbide power module parasitic inductance thermalperformance high-temperature performance insulation performance reliability

收稿日期: 2022-06-24

PACS:

TN305

基金资助:

国家重点研发计划资助（2019YFE0122800）

通讯作者: 王来利男,1982年生,教授,博士生导师,研究方向为电力电子封装集成。E-mail：llwang@mail.xjtu.edu.cn

作者简介: 赵成男,1996年生,博士研究生,研究方向为电力电子封装集成。张彤宇男,1997年生,博士研究生,研究方向为电力电子封装集成。闫飞飞女,1990年生,博士研究生,研究方向为电力电子封装集成。

引用本文:

王来利, 赵成, 张彤宇, 闫飞飞. 碳化硅功率模块封装技术综述[J]. 电工技术学报, 0, (): 230611-230611. Wang Laili, Zhao Cheng, Zhang Tongyu, YanFeifei. Review of Packaging and Integration Technology in Silicon Carbide Power modules. Transactions of China Electrotechnical Society, 0, (): 230611-230611.

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