基于陷阱分布的PI/ZnO复合薄膜介电特性

doi:10.19595/j.cnki.1000-6753.tces.L90430

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摘要航天器在空间环境中的运行稳定性与聚酰亚胺（PI）等航天介质材料绝缘性能息息相关,而其介质内部载流子陷阱是影响绝缘性能的重要因素之一,因此,探究陷阱分布对介质电气性能的影响对保障航天器介质安全使用具有重要意义。该文制备不同掺杂量（质量分数0.5%、1%、3%）的纳米PI/ZnO复合薄膜并进行介电性能测试,通过热刺激电流法和表面电位衰减法分别测量薄膜体陷阱和表面陷阱能级分布并计算其载流子迁移率,测量体积电阻率和击穿场强。该文基于多核模型对纳米ZnO的引入使聚合物的介电性能发生改变的现象进行解释;从陷阱能级的角度分析深、浅陷阱对极化离子的影响机制,讨论陷阱整体的分布对介电常数变化的影响。这些分析和研究为调控材料的绝缘性能、提高航天器的安全性提供了新的思路和方法。

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关键词 ：介电性能, 聚酰亚胺, 纳米ZnO, 陷阱能级分布

Abstract：The operating stability of spacecraft in the space environment is closely related to the insulation performance of aerospace dielectric materials such as polyimide (PI), and the carrier trap inside the dielectric material is one of the important factors affecting the insulation performance. Therefore, exploring the impact of trap distribution on the electrical properties of dielectric materials is of great significance to ensure the safe use of spacecraft dielectric materials. In this paper, nano-PI/ZnO composite films with different doping levels (0.5%, 1%, 3%) are prepared and tested for dielectric properties. The energy distribution of thin film bulk traps and surface traps are measured by thermally stimulated depolarization currents method and isothermal surface potential decay method respectively, the carrier mobility is calculated, and the volume resistivity and breakdown field strength are measured. Based on the multi-core model, the phenomenon that the introduction of nano-ZnO changes the dielectric properties of polymers is explained, and the influence mechanism of deep and shallow traps on polarized ions is analyzed from the perspective of trap level. This paper can provide new ideas and methods for regulating the insulation properties of materials and improving the safety of spacecraft.

Key words： Dielectric properties polyimide nano-ZnO trap level distribution

收稿日期: 2020-07-11

PACS:	TM215.1
	TM855

基金资助:国家自然科学基金资助项目（51607134）

通讯作者: 乌江男,1986年生,讲师,研究方向为极端环境下介质表面充放电机理与抑制方法。E-mail: jiangw@xjtu.edu.cn

作者简介: 李天娇女,1998年生,硕士研究生,研究方向为纳米复合聚酰亚胺材料介电性能及电荷输运机理。E-mail: ltj0518@stu.xjtu.edu.cn

引用本文:

李天娇, 张博, 乌江. 基于陷阱分布的PI/ZnO复合薄膜介电特性[J]. 电工技术学报, 2022, 37(6): 1554-1563. Li Tianjiao, Zhang Bo, Wu Jiang. The Dielectric Properties of PI/ZnO Composite Films Based on Trap Level Distribution. Transactions of China Electrotechnical Society, 2022, 37(6): 1554-1563.

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https://dgjsxb.ces-transaction.com/CN/10.19595/j.cnki.1000-6753.tces.L90430 https://dgjsxb.ces-transaction.com/CN/Y2022/V37/I6/1554

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