电工技术学报  2019, Vol. 34 Issue (zk2): 518-527    DOI: 10.19595/j.cnki.1000-6753.tces.L80261
电力电子 |
多芯并联封装IGBT缺陷与失效先导判据
黄先进, 凌超, 孙湖, 游小杰
北京交通大学电气工程学院 北京 100044
The Leading Criterion for Defects and Failures in Multi-Chip Parallel Package IGBTs
Huang Xianjin, Ling Chao, Sun Hu, You Xiaojie
School of Electrical Engineering Beijing Jiaotong University Beijing 100044 China
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摘要 器件由于内部芯片失效而产生IGBT故障,且检测保护困难,大多只能在系统外特性上加以防护,本体还是会受较大损害。高压大功率IGBT模块内部由多芯片和大量键合线构成,器件功能失效很大部分是由铝键合线脱落或者断裂引起的。提早发现或辨知此类缺陷或失效导致的电气特性变化,是构建IGBT故障的先导判据条件,有利于规避潜在故障风险,提高IGBT利用可靠性。针对英飞凌6.5kV多芯片并联封装IGBT模块的布局结构和连接特点,分析连接寄生参数差异对芯片工作状态的影响。以模块内部芯片间键合线的杂散电感和栅极电容参数为研究对象,利用最小二乘法参数辨识机制,构建一种区分模块缺陷与失效的先导判据。研究IGBT模块和元胞栅极等效电路,分析键合线故障导致的电路参数和工作特性变化,通过采样栅极电压与电流数据,利用最小二乘法参数估计得到故障类型及杂散参数数值,通过仿真与实验验证了该方法的有效性。
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黄先进
凌超
孙湖
游小杰
关键词 IGBT缺陷与失效键合线最小二乘法杂散参数辨识    
Abstract:Due to difficult detection, in order to solve IGBT module internal chip failure and other failures, most of the measures can only be taken outside the system, the device body will still be greatly damaged. The internal failure is mostly caused by the fall-off or breakage of the Aluminum bonding wires. The failure of observing the internal part of the IGBT tend to result in the incorrect recognization of the failure condition of the module. The lack of timely security measures may trigger a more serious system failure. In this paper, the working characteristics of the multi-chip parallel package high voltage high power IGBT module considering the spurious parameters are studied. The effect of stray inductance and gate capacitance on the working state of the chip is analyzed for the structural characteristics of Infineon 6.5kV IGBT module. The Based on the parasitic parameters of the aluminum bonding wire between the modules, a spurious parameter identification method based on the least squares algorithm is constructed. Based on the equivalent circuit of IGBT gate, the change of circuit parameter or structure caused by aluminum bond fault is studied. By sampling the gate voltage and current data, the least squares method is used to estimate the fault type and the spurious parameters, the effectiveness of the method is verified by simulations and experiments.
Key wordsIGBT defect &    failure    AL bonding wires    least square method    spurious parameter identification   
收稿日期: 2018-06-29      出版日期: 2020-01-02
PACS: TM46  
作者简介: 黄先进 男,1980年生,博士,副教授,硕士生导师,研究方向为变流器控制与设计和新型功率器件应用等。E-mail: xjhuang@bjtu.edu.cn(通信作者)凌 超 男,1992年生,硕士,研究方向为电力电子与电力传动。E-mail: 767129857@qq.com
引用本文:   
黄先进, 凌超, 孙湖, 游小杰. 多芯并联封装IGBT缺陷与失效先导判据[J]. 电工技术学报, 2019, 34(zk2): 518-527. Huang Xianjin, Ling Chao, Sun Hu, You Xiaojie. The Leading Criterion for Defects and Failures in Multi-Chip Parallel Package IGBTs. Transactions of China Electrotechnical Society, 2019, 34(zk2): 518-527.
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