电工技术学报  2019, Vol. 34 Issue (zk2): 509-517    DOI: 10.19595/j.cnki.1000-6753.tces.L80413
电力电子 |
不同工作模式下的IGBT模块瞬态热特性退化分析
刘向向, 李志刚, 姚芳
河北工业大学省部共建电工装备可靠性与智能化国家重点实验室 天津 300130
Degradation Analysis of Transient Thermal Characteristics of IGBT Module under Different Working Conditions
Liu Xiangxiang, Li Zhigang, Yao Fang
The State Key Laboratory of Reliability and Intelligentization of Electrical Equipment Cosponsored by the Ministry of Hebei University of Technology Tianjin 300130 China
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摘要 对于不同工作模式下的绝缘栅双极晶体管(IGBT)的热退化特性进行研究。首先设计模块动态测试实验,实时监测退化数据,同时应用瞬态双界面法间隔性地测量热阻的退化情况。根据实验结果,从失效机理方面分析退化条件和各层材料的退化情况之间的关系。同时以有限元分析方法作为辅助手段,验证了实验测量的有效性,且更加直观地得到在不同边界条件下IGBT的热模型。研究结果表明,温度波动对于模块退化特性的影响要远高于温度和开关频率对模块造成的影响。较高的频率对于模块的影响主要在芯片内部,而温度波动对于模块的影响主要在包装级别。
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刘向向
李志刚
姚芳
关键词 瞬态双界面法结构函数时间常数谱退化    
Abstract:In this paper, the thermal degradation characteristics of insulated gate bipolar transistor (IGBT) under different operating modes are studied. The module dynamic test experiment is designed to monitor the degradation data in real time, and the degradation of thermal resistance is measured at intervals by the transient double-interface method. Based on the experimental results, the relationship between the aging conditions and the degradation of each layer of materials is analyzed from the aspect of failure mechanism. At the same time, the finite element analysis method is used as an auxiliary method to verify the validity of the experimental measurements, and the IGBT thermal model under different boundary conditions can be obtained more intuitively. The results show that the effect of temperature excursion has a higher impact on module degradation than that of mean temperature and on-off frequency. The effect of higher frequency on the module mainly occurs inside the chip, while the effect of temperature excursion on the module mainly occurs at the packaging level.
Key wordsTransient dual-interface method    structure function    time-constant spectrum    degradation   
收稿日期: 2018-06-30      出版日期: 2020-01-02
PACS: TM51  
作者简介: 刘向向 女,1991年生,博士研究生,研究方向为电器可靠性及其检测技术等。E-mail: 479610675@qq.com(通信作者)李志刚 男,1958年出生,博士生导师,研究方向为电器元件的可靠性理论及寿命预测、安全性评估、疲劳特性及故障诊断等。E-mail: zgli@hebut.edu.cn
引用本文:   
刘向向, 李志刚, 姚芳. 不同工作模式下的IGBT模块瞬态热特性退化分析[J]. 电工技术学报, 2019, 34(zk2): 509-517. Liu Xiangxiang, Li Zhigang, Yao Fang. Degradation Analysis of Transient Thermal Characteristics of IGBT Module under Different Working Conditions. Transactions of China Electrotechnical Society, 2019, 34(zk2): 509-517.
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