Power MOSFET Gate Driver of the High Frequency Resonant Inverter
Liu Jiaomin1, 2, Li Jianwen1, Cui Yulong3, Han Ming2
1. North China Electric Power University Beijing 102206 China 2. Hebei University of Science and Technology Shijiazhuang 050018 China 3. Beijing University of Chemical Technology Beijing 100029 China
Abstract：Power MOSFET operations in softing switching in the load resonant bridge inverter, as the switching frequency is up to MHz, the gate driver is needed to meet the requirements of higer driver current, faster switching, lower speed, less driver loss. After the analysis and comparison to the conventional gate driver and the existing resonant one, the paper presents a new discontinuous current source gate driver for power MOSFET in the HF resonant bridge inverter, and the work processing of the new driver was addressed in detail. The principle analysis and experimental results verify that the values of charging and discharging of power MOSFET are almost constant, significant reduction of the switching transition time and switching loss. The inductance current is discontinuous, decrease the conduction loss; to use anti-diodes path to create a negative gate voltage during turn-off transition, further reduced switching time and the turn-off loss; the stored energy in the inductor is returned to the drive voltage source. The benefit of the gate energy recovery capability is that higher gate drive voltage can be used to further reduce the conduction loss.
刘教民, 李建文, 崔玉龙, 韩明. 高频谐振逆变器的功率MOS管驱动电路[J]. 电工技术学报, 2011, 26(5): 113-118.
Liu Jiaomin, Li Jianwen, Cui Yulong, Han Ming. Power MOSFET Gate Driver of the High Frequency Resonant Inverter. Transactions of China Electrotechnical Society, 2011, 26(5): 113-118.
[1] 王正仕, 楼珍丽, 陈辉明. 兆赫级超高频感应加热电源电路的分析与研究[J]. 中国电机工程学报, 2007, 27(19): 82-86. Wang Zhengshi, Lou Zhenli, Chen Huiming. Analysis and research on a mega-Hz-level super high frequency induction heating power supply converter[J]. Proceedings of the CSEE, 2007, 27(19): 82-86. [2] 蔡慧, 赵荣祥, 陈辉明, 等. 倍频式IGBT高频感应加热电源的研究[J]. 中国电机工程学报, 2006, 26(2): 154-158. Cai Hui, Zhao Rongxiang, Chen Huiming, et al. Study on multiple-frequency IGBT high frequency[J]. Proceedings of the CSEE, 2006, 26 (2): 154-158. [3] 陈辉明, 王英, 张仲超. 高频LLC感应加热电源及降低开关损耗策略研究[J]. 中国电机工程学报, 2006, 17(2): 67-71. Chen Huiming, Wang Ying, Zhang Zhongchao. Reseanrh on high frequency LLC induction heating power supply and decrease in the switching power loss[J]. Proceedings of the CSEE, 2006, 17(2): 67-71. [4] 孙亚秀, 孙力, 聂剑红. 低干扰低损耗新型MOSFET三阶驱动电路[J]. 中国电机工程学报, 2007, 27(10)：67-72. Sun Yaxiu, Sun Li, Nie Jianhong. A novel three stage drive circuit for MOSFET to reduce electromagnetic interference noise and switching losses[J]. Proceedings of the CSEE, 2007, 27(10): 67-72. [5] Maksimovic D. A MOS gate drive with resonant transitions[C]. Proc. IEEE Power Electron. Spec. Conf. , 1991: 527-532. [6] Chen Yuhui, Lee F C, Amoroso L, et al. A resonant MOSFET gate driver with complete energy recovery[C]. Proc. IEEE PowerElectronics and Motion Control Conference, 2000: 402-406. [7] Chen Yuhui, Lee Fred C, Amoroso Luca, et al. A resonant MOSFET gate driver with efficient energy recovery[J]. IEEE Transactions on Power Electronics, 2004, 19(2): 470-477. [8] Eberle W, Zhang Z, Liu Y F, et al. A current source gate driver achieving switching loss savings and gate energy recovery at 1 MHz[J]. IEEE Trans. Power Electron, 2008, 23(2): 678-691. [9] Fu Jizhen, Zhang Zhiliang, Eberle Wilson, et al. A high efficiency current source driver with negative gatevoltage for Buck voltage regulators[J]. IEEE Trans. Power Electron, 2009, 21(3): 1663-1670. [10] Tony López, Georg Sauerlaender, Thomas Duerbaum, et al. A detailed analysis of a resonant gate driver for PWM applications[C]. Proc. IEEE App. Power Electron. Conf, 2003: 873-878. [11] Dwane P, Sullivan D O, Egan M G. An assessment of resonant gate drive techniques for use in modern low power DC-DC converters[C]. IEEE Appl. Power Electron. Conf. Expo. (APEC), 2005: 1572-1580. [12] Eberle Wilson, Zhang Zhiliang, Liu Yanfei, et al. Current source gate driver achieving switching loss savings and gate energy recovery at 1MHz[J]. IEEE Transactionson Power Electronics, 2008, 23(2): 678-691. [13] Yang Z, Ye S, Liu Y F. New dual channel resonant gate drive circuit for low gate drive loss and low switching loss[J]. IEEE Trans. Power Electron, 2008, 23(3): 1574-1583. [14] Zhang Zhiliang, Fu Jizhen, Liu Yanfei. Discon- tinuous-current-source drivers for high-frequency power MOSFETs[J]. IEEE Trans. on Power Electron, 2010, 25(7): 1863-1876.
2011, Vol. 26 
