基于陷阱分布的PI/ZnO复合薄膜介电特性

doi:10.19595/j.cnki.1000-6753.tces.L90430

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Abstract The operating stability of spacecraft in the space environment is closely related to the insulation performance of aerospace dielectric materials such as polyimide (PI), and the carrier trap inside the dielectric material is one of the important factors affecting the insulation performance. Therefore, exploring the impact of trap distribution on the electrical properties of dielectric materials is of great significance to ensure the safe use of spacecraft dielectric materials. In this paper, nano-PI/ZnO composite films with different doping levels (0.5%, 1%, 3%) are prepared and tested for dielectric properties. The energy distribution of thin film bulk traps and surface traps are measured by thermally stimulated depolarization currents method and isothermal surface potential decay method respectively, the carrier mobility is calculated, and the volume resistivity and breakdown field strength are measured. Based on the multi-core model, the phenomenon that the introduction of nano-ZnO changes the dielectric properties of polymers is explained, and the influence mechanism of deep and shallow traps on polarized ions is analyzed from the perspective of trap level. This paper can provide new ideas and methods for regulating the insulation properties of materials and improving the safety of spacecraft.

Key words： Dielectric properties polyimide nano-ZnO trap level distribution

Received: 11 July 2020

PACS:	TM215.1
	TM855

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	Li Tianjiao
	Zhang Bo
	Wu Jiang

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Li Tianjiao,Zhang Bo,Wu Jiang. The Dielectric Properties of PI/ZnO Composite Films Based on Trap Level Distribution[J]. Transactions of China Electrotechnical Society, 2022, 37(6): 1554-1563.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L90430 OR https://dgjsxb.ces-transaction.com/EN/Y2022/V37/I6/1554

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