低压氮化镓器件谐振驱动技术及其反向导通特性

doi:10.19595/j.cnki.1000-6753.tces.L80320

Abstract
Figure/Table
References
Related Citation (13)

Download: PDF (75759 KB) HTML (1 KB)
Export: BibTeX | EndNote (RIS)

Abstract After silicon (Si) and gallium arsenide (GaAs), semiconductor material has third generation of wide band gap semiconductor materials represented by gallium nitride (GaN). Its characteristics include high critical breakdown electric field, high saturation electron speed, high electron density, high electron mobility and high thermal conductivity. It is suitable for high frequency, high pressure and high temperature, high power semiconductor materials with high radiation resistance. Because the switching characteristics, driving technology and loss mechanism of GaN devices have significant differences compared with the Si MOSFET, how to realize the rational drive method is very important to achieve its advantages. Taking a synchronous buck converter as an example, a resonant driving technique was proposed, and a bias voltage was added to the gate of the rectifier transistor to reduce the reverse voltage drop and improve the efficiency. The experimental results show that the resonant drive technology can effectively improve the reliability of the drive, and the efficiency of the converter can also be effectively improved after adding the bias voltage.

Key words： GaN resonant gate drive bias voltage synchronous Buck

Received: 29 June 2018 Published: 29 July 2019

PACS:

TM46

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors
	Zhao Qinglin
	Cui Shaowei
	Yuan Jing
	Wang Deyu

Cite this article:

Zhao Qinglin,Cui Shaowei,Yuan Jing等. Resonant Drive Technology and Reverse Conduction Characteristics of Low Voltage GaN Devices[J]. Transactions of China Electrotechnical Society, 2019, 34(zk1): 133-140.

URL:

https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L80320 OR https://dgjsxb.ces-transaction.com/EN/Y2019/V34/Izk1/133

[1] 忻力, 荣智林, 窦泽春, 等. IGBT在轨道交通牵引应用中的可靠性研究[J]. 机车电传动, 2015(5): 1-5.
Xin Li, Rong Zhilin, Dou Zechun, et al.Study on IGBT reliability of rail transit traction converter application[J]. Electric Drive for Locomotives, 2015(5): 1-5.
[2] Yang S, Bryant A, Mawby P, et al.Anindustry-based survey of reliability in power electronic converters[J]. IEEE Transactions on Industry Applications, 2011, 47(3): 1441-1451.
[3] Hirschmann D, Tissen D, Schröder S, et al.Reli- ability prediction for inverters in hybrid electrical vehicles[J]. IEEE Transactions on Power Electronic, 2007, 22(6): 2511-2517.
[4] 任磊, 沈茜, 龚春英. 电力电子电路中功率晶体管结温在线测量技术研究现状[J]. 电工技术学报, 2018, 33(8): 1750-1761.
Ren Lei, Shen Qian, Gong Chunying.Current junction temperature online measurement techniques of power transistors in power electronic converters[J]. Transactions of China Electrotechnical Society, 2018, 33(8): 1750-1761.
[5] 任艳, 彭琦, 于迪, 等. 基于加速寿命试验的IGBT可靠性预计模型研究[J]. 电力电子技术, 2017, 51(5): 121-124.
Ren Yan, Peng Qi, Yu Di, et al.Research on the reliability prediction model for IGBT based on accelerated lifetime testing[J]. Power Electronics, 2017, 51(5): 121-124.
[6] Mermet-Guyennet M, Perpina X, Piton M.Revisiting power cycling test for better life-time prediction in traction[J]. Microelectronics Reliability, 2007, 47(9): 1690-1695.
[7] 姚芳, 王少杰, 李志刚. IGBT结温获取方法及其讨论[J]. 电测与仪表, 2017, 54(12): 42-48.
Yao Fang, Wang Shaojie, Li Zhigang.Review of IGBT junction temperature acquisition method[J]. Electrical Measurement & Instrumentation, 2017, 54(12): 42-48.
[8] Mauro Ciappa, Flavio Carbognani, Wolfgang Fichtner.Lifetime modeling of thermomechanics- related failure mechanisms in high power IGBT modules for traction applications[C]//In Proceedings of ISPSD, Cambridge, UK, 2003: 295-298.
[9] 赖伟, 陈民铀, 冉立, 等. 老化实验条件下的IGBT寿命预测模[J].电工技术学报, 2016, 31(24): 173-180.
Lai Wei, Chen Minyou, Ran Li, et al.IGBT lifetime model based on aging experiment[J]. Transactions of China Electrotechnical Society, 2016, 31(24): 173-180.
[10] 彭英舟, 周雒维, 孙鹏菊, 等. 基于开通密勒平台电压的IGBT模块结温估计研究[J]. 中国电机工程学报, 2017, 37(11): 3254-3262.
Peng Yingzhou, Zhou Luowei, Sun Pengju, et al.Study of IGBT junction temperature estimation based on turn-on Miller platform voltage[J]. Proceedings of the CSEE, 2017, 37(11): 3254-3262.
[11] Coquery G, Lallemand R.Failure criteria for long term accelerated power cycling test linked to electrical turn off SOA on IGBT model. A 4000 hours test on 1200A-3300V module with AlSiC base plate[J]. Microelectronics Reliability, 2010, 40(8): 1665-1670.
[12] Sundaramoorthy V K, Bianda E, Bloch R.A study on IGBT junction temperature (T_j) online estimation using gate-emitter voltage (V_ge) at turn-off[J]. Micro- electronics Reliability, 2014, 54(11): 2423-2431.
[13] 唐勇, 汪波, 陈明, 等. 高温下的IGBT可靠性与在线评估[J]. 电工技术学报, 2014, 29(6): 17-23.
Tang Yong, Wang Bo, Chen Ming, et al.Reliability and on-line evaluation of IGBT modules under high temperature[J]. Transactions of China Electro- technical Society, 2014, 29(6): 17-23.
[14] 刘文业, 李彦涌, 杨进峰, 等. 非标条件下IGBT器件应用可靠性研究[J]. 大功率变流技术, 2016(2): 1-4.
Liu Wenye, Li Yanyong, Yang Jinfeng, et al.Research on application reliability of IGBT device in non-standard operating conditions[J]. High Power Converter Technology, 2016(2): 1-4.
[15] Fratelli L, Cascone B, Giannini G, et al.Long term reliability testing of HV-IGBT modules in worst case traction operation[J]. Microelectronics Reliability, 1999, 39(6-7): 1137-1142.
[16] 蔡杰, 周雒维, 彭英舟, 等. 一种IGBT模块端口等效耦合热阻抗的离散化方波提取法[J]. 电工技术学报, 2018, 33(7): 1440-1449.
Cai Jie, Zhou Luowei, Peng Yingzhou, et al.A discrete square wave extraction method for the port equivalent coupled thermal impedance of IGBT modules[J]. Transactions of China Electrotechnical Society, 2018, 33(7): 1440-1449.
[17] Bayerer R, Licht T, Herrmann T, et al.Model for power cycling lifetime of IGBT modules-various factors influencing lifetime[C]//Proceedings of the 5th International Conference on Integrated Power Electronic Systems, Nuremberg, Germany, 2008: 37-42.
[18] Jiang Renyan, Wang Tianjun.Log-Weibull distri- bution as a lifetime distribution[C]//Proceedings of 2013 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering, Chengdu, China, 2013: 813-816.
[19] 王治国, 郑泽东, 李永东, 等. 轨道交通车辆牵引电传动系统的调制与控制策略[J]. 电工技术学报, 2016, 31(24): 223-232.
Wang Zhiguo, Zheng Zedong, Li Yongdong, et al.Modulation and control strategy for electric traction drive system of rail transit vehicles[J]. Transactions of China Electrotechnical Society, 2016, 31(24): 223-232.
[20] Zhu Xianhui, Cui Shumei, Shi Nan, et al.Grey prediction model of motor reliability of electric vehicle[J]. Electric Machines and Control, 2012, 16(8): 42-46.