IGBT极限功耗与热失效机理分析

Abstract
Figure/Table
References
Related Citation (15)

Download: PDF (0 KB) HTML (1 KB)
Export: BibTeX | EndNote (RIS)

Abstract The maximum power dissipation of insulated gate bipolar transistor (IGBT) is an important component of the safe operating area, which is related to the external heat sink, internal thermal resistance and application conditions. However, the maximum power dissipation in the device datasheet is an ideal value which is difficult to reflect the practical operating conditions. Therefore, inappropriate design may lead to the thermal failure of IGBT. Based on the temperature characteristics of IGBT power dissipation and the junction-case steady-state thermal resistance, the power dissipation curve and the junction-case thermal conduction curve were associated. The stable, unstable and critical points on the thermal equivalent curve were thus solved through the thermal equivalence analysis. Therefore, the limiting power dissipation of the IGBT at the critical point was obtained. The thermal failure mechanism was also analyzed and validated, according to the positive feedback relationship between the junction temperature and the power dissipation at the unstable point.

Key words： Insulated gate bipolar transistor limiting power dissipation thermal balance thermal failure

Received: 17 August 2014 Published: 12 July 2016

PACS:

TN322

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors

Cite this article:

URL:

https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2016/V31/I12/135

[1] 王兆安, 张明勋. 电力电子设备设计和应用手册[M]. 北京: 机械工业出版社, 2002.
[2] 维捷斯拉夫·本达. 功率半导体器件——理论及应用[M]. 北京: 化学工业出版社, 2005.
[3] Wei Lixiang, Richard A, Thomas A. Analysis of power cycling capability of IGBT modules in a conventional matrix converter[J]. IEEE Transactions on Industry Applications, 2009, 45(4): 1443-1451.
[4] Ciappa M, Carbognani F, Fichtner W. Lifetime predi- ction and design of reliability tests for high-power devices in automotive applications[J]. IEEE Transa- ctions on Device Mater, 2003, 3(4): 191-196.
[5] 汪波, 胡安, 唐勇, 等. IGBT电压击穿特性分析[J]. 电工技术学报, 2011, 26(8): 145-150.
Wang Bo, Hu An, Tang Yong, et al. Analysis for voltage breakdown characteristic of IGBT[J]. Transactions of China Electrotechnical Society, 2011, 26(8): 145-150.
[6] Michael J, Ewart B, Gary D. Analysis of high-power IGBT short circuit failures[J]. IEEE Transactions on Plasma Science, 2005, 33(4): 1252-1261.
[7] Musumeci S, Pagano R, Raciti A. A new gate circuit performing fault protections of IGBTs during short circuit transients[C]//37th IAS Annual Meeting Conference, Pittsburgh, USA, 2002: 2614-2621.
[8] 丁强, 何湘宁. 采用Saber模型研究IGBT工作极限特性[J]. 电工技术学报, 2001, 16(2): 65-69.
Ding Qiang, He Xiangning. Research on IGBT operation limits by using the model of saber[J]. Transactions of China Electrotechnical Society, 2001, 16(2): 65-69.
[9] Sheng Kuang, Wiliams B W, He Xiangning, et al. Measurement of IGBT switching frequency limits[C]// Power Electronics Specialists Conference, South Carolina, 1999: 376-380.
[10] 李山, 张立. IGBT极限电流与通态极限功耗的研究[J]. 中国电机工程学报, 1999, 19(6): 47-51.
Li Shan, Zhang Li. Research on IGBT limiting current and on-state limiting power loss[J]. Pro- ceedings of the CSEE, 1999, 19(6): 47-51.
[11] 周文俊, 刘希真, 李正勤, 等. IGBT极限电流与极限功耗的识别方法[J]. 天津大学学报, 2002, 35(2): 239-242.
Zhou Wenjun, Liu Xizhen, Li Zhengqin, et al. Identification method of IGBT limiting current and limiting power loss[J]. Journal of Tianjin University, 2002, 35(2): 239-242.
[12] Chen D, Lee F C, Carpenter G. Nondestructive RBSOA characterization of IGBT's and MCT's[J]. IEEE Transactions on Power Electronics, 1995, 10(3): 368-372.
[13] Busatto G, Abbate C, Iannuzzo F. Non destructive SOA testing of power modules[C]//Proceeding of Integrated Power Electronics Systems, Nuremberg, 2010: 1-6.
[14] Hagh M T, Abapour M. Nonsuperconducting fault current limiter with controlling the magnitudes of fault currents[J]. IEEE Transactions on Power Elec- tronics, 2009, 24(3): 613-619.
[15] Bazzi A, Philip T, Jonathan W. IGBT and diode loss estimation under hysteresis switching[J]. IEEE Transactions on Power Electronics, 2012, 27(3): 1044-1048.
[16] Zhou Z, Khanniche M, Igic P, et al. A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three-phase inverter system[J]. Model Electron Devices Fields, 2006, 19(1): 43-46.
[17] Bruckner T, Steffen B. Estimation and measurement of junction temperatures in a three-level voltage source converter[J]. IEEE Transactions on Power Eletronics, 2007, 22(1): 3-12.
[18] Musallam M, Acarnley P, Johnson C M, et al. Estimation and control of power electronic device temperature during operation with variable condu- cting current[J]. IET Transactions on Circuits Devices and System, 2007, 1(2): 111-116.
[19] 陈治明, 李守智. 宽禁带半导体电力电子器件及其应用[M]. 北京: 机械工业出版社, 2009.
[20] 陈明, 胡安, 唐勇, 等. 绝缘栅双极型晶体管传热模型建模分析[J]. 高电压技术, 2011, 37(2): 453-459.
Chen Ming, Hu An, Tang Yong, et al. Modeling analysis of IGBT thermal model[J]. High Voltage Engineering, 2011, 37(2): 453-459.
[21] 陶文铨. 传热学[M]. 西安: 西北工业大学出版社, 2006.