考虑寄生参数的高压GaN高电子迁移率晶体管的逆变器动态过程分析

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Abstract In recent years with the rapid development of the manufacturing process of GaN devices, gallium nitride high electron mobility transistor (GAN HEMT) has begun to apply in the field of power electronics. GaN HEMT has the characteristics of low parasitic parameters, no reverse recovery losses and high speed, which will reduce the switching losses of the device. Taken the 600V GaN HEMT as an example,this paper studied the switch dynamic process and the effects of parasitic caused by the cascode structure of the switch. This paper established a 600V GaN HEMT equivalent model, as well as derived the dynamic processes under four cases in a single phase inverter. The four cases are positive switch conduction, the forward turn off, reverse freewheeling turn on and reverse wheeling turn off. The equivalent circuit of GaN HEMT considers the parasitic inductance that has great impacts on the switching process and the switching loss. The effects of the parasitic parameters are identified and verified by simulation and experiment results. L_int1, L_int3 and L_S directly affect the dynamic process of the switch and further affect the switching losses of the switch.

Key words： Wide band gap semiconductor device GaN high electron mobility transistor dynamic process

Received: 03 June 2015 Published: 12 July 2016

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https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2016/V31/I12/126

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