全碳化硅辅助变流器功率回路振荡问题

doi:10.19595/j.cnki.1000-6753.tces.L90378

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Abstract Using SiC MOSFET to replace traditional Si IGBT can achieve higher switching frequency and lower losses, but higher di/dt causes resonance between the SiC MOSFET junction capacitance and parasitic inductance, which further produces high frequency oscillation and overshoot voltage. Considering the system parasitic parameters thoroughly, a small signal model for SiC MOSFET turn-off oscillation is established. Then the conditions for fully decoupling the wire parasitic inductance by decoupling capacitor are derived. The high-frequency oscillation and low-frequency oscillation also analyzed in the frequency domain. On the basis of these, a low frequency oscillation resonance analysis model is proposed to accurately analyze low frequency oscillation in the power circuit. Moreover, an impedance analysis network is established to calculate the low-frequency resonance current. Finally, the simulation and experimental results prove the accuracy of the proposed turn-off oscillation analysis model and the analytical calculation method of the resonance current. These methods provide guidance for the design of system parameters.

Key words： SiC MOSFET turn-off oscillation resonance current analytic method decoupling capacitor

Received: 10 July 2020

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TM46

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	Articles by authors
	Yu Baowei
	Guo Xizheng
	Bu Xucong
	Liu Weizhi
	You Xiaojie

Cite this article:

Yu Baowei,Guo Xizheng,Bu Xucong等. Oscillation of Power Circuit of Full SiC Auxiliary Converter[J]. Transactions of China Electrotechnical Society, 2021, 36(zk2): 619-626.

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https://dgjsxb.ces-transaction.com/EN/10.19595/j.cnki.1000-6753.tces.L90378 OR https://dgjsxb.ces-transaction.com/EN/Y2021/V36/Izk2/619

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