一种改进的并联IGBT模块瞬态电热模型

Abstract
Figure/Table
References
Related Citation (15)

Download: PDF (37009 KB) HTML (1 KB)
Export: BibTeX | EndNote (RIS)

Abstract In high power systems, the switching devices are usually utilized in parallel in order to scale up the power rate of circuits. A transient electro-thermal model of paralleled modules needs to be established to keep insulated gate bipolar transistor (IGBT) modules operating in the safe area. Firstly, the influence on losses by junction temperature is analyzed in detail. The variations of voltage and current are derived by building equivalent circuits in different switching periods. Meanwhile, the quantitative relationship between temperature-sensitive parameters and junction temperature is determined by building test platform. Furthermore, considering the coupling thermal path between paralleled modules, an improved thermal model for paralleled modules is proposed and analyzed. Finally, an electro-thermal model is built based on loss analysis and thermal model. The experimental platform was built to analyze the influence of distance between the modules on the transient junction temperature in paralleled modules. Compared with traditional models, the calculation results agree well with the experimental results, which validates the proposed model.

Key words： Insulated gate bipolar transistor paralleling loss model thermal impedance electro-thermal model

Received: 20 September 2015 Published: 30 June 2017

PACS:

TM564

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors
	Tang Yunyu
	Lin Liaoyuan
	Ma Hao

Cite this article:

Tang Yunyu,Lin Liaoyuan,Ma Hao. An Improved Transient Electro-Thermal Model for Paralleled IGBT Modules[J]. Transactions of China Electrotechnical Society, 2017, 32(12): 88-96.

URL:

https://dgjsxb.ces-transaction.com/EN/ OR https://dgjsxb.ces-transaction.com/EN/Y2017/V32/I12/88

[1] 唐勇, 汪波, 陈明. IGBT开关瞬态的温度特性与电热仿真[J]. 电工技术学报, 2012, 27(12): 146-153.
Tang Yong, Wang Bo, Chen Ming. Temperature characteristic and electro-thermal model of IGBT switching transient[J]. Transactions of China Electro- technical Society, 2012, 27(12): 146-153.
[2] 白保东, 陈德志, 王鑫博. 逆变器IGBT损耗计算及冷却装置设计[J]. 电工技术学报, 2013, 28(8): 97-106.
Bai Baodong, Chen Dezhi, Wang Xinbo. Loss calculation of inverter IGBT and design of cooling device[J]. Transactions of China Electrotechnical Society, 2013, 28(8): 97-106.
[3] 邓夷, 赵争鸣, 袁立强, 等. 适用于复杂电路分析的IGBT模型[J]. 中国电机工程学报, 2010, 30(9): 1-7.
Deng Yi, Zhao Zhengming, Yuan Liqiang, et al. IGBT model for analysis of complicated circuits[J]. Proceedings of the CSEE, 2010, 30(9): 1-7.
[4] 王雪松, 赵争鸣, 袁立强, 等. 应用于大容量变换器的IGBT并联技术[J]. 电工技术学报, 2012, 27(10): 155-162.
Wang Xuesong, Zhao Zhengming, Yuan Liqiang, et al. IGBT model for analysis of complicated circuits[J]. Transactions of China Electrotechnical Society, 2012, 27(10): 155-162.
[5] Letor R. Static and dynamic behavior of paralleled IGBT’s[J]. IEEE Transactions on Industrial Appli- cations, 1992, 28(2): 395-402.
[6] Nan C, Chimento F, Nawaz M, et al. Dynamic characterization of parallel-connected high-power IGBT modules[J]. IEEE Transactions on Industrial Applications, 2014, 51(1): 539-546.
[7] Hefner A R, Diebolt D M. An experimentally verified IGBT model implemented in the Saber circuit simulator[J]. IEEE Transactions on Power Elec- tronics, 1993, 9(5): 532-542.
[8] Sheng K, Finney S J, Williams B W. A new analytical IGBT model with improved electrical characteri- stics[J]. IEEE Transactions on Power Electronics, 1999, 14(1): 98-107.
[9] Luo Z, Ahn H, Nokali M A. A thermal model for indulated gate bipolar transistor module[J]. IEEE Transactions on Power Electronics, 2004, 19(4): 902- 907.
[10] Yun C, Malberti P, Ciappa M, et al. Thermal component model for electrothermal analysis of IGBT module systems[J]. IEEE Transactions on Advanced Package, 2001, 24(3): 401-406.
[11] Grbovic P J. An IGBT gate drive for feed-forward control of turn-on losses and reverse recovery current[J]. IEEE Transactions on Power Electronics, 2008, 23(2): 643-652.
[12] Linder S. Power semiconductors[M]. Milan, Italy: EPFL Press, 2006.
[13] Byrant A, Yang S, Mawby P, et al. Investigation into IGBT d v /d t during turn-off and its temperature dependence[J]. IEEE Transactions on Power Elec- tronics, 2011, 26(10): 3019-3031.