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| Junction Temperature Prediction Mathematical Model of IGBT Based on the Characteristics of Thermal Dynamics |
| Liu Binli, Luo Yifei, Xiao Fei, Xiong Youxing, Jia Yingjie |
| National Key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan 430033 China |
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Abstract Based on the characteristics of thermal dynamics, a method of insulated gate bipolar transistor (IGBT) thermal mathematical modelling is proposed. The model of IGBT junction prediction temperature can’t be flexibly applied to the multi-time simulation and fast calculation. Thus, the thermal mathematical model against step power signal is established based on the RC network structure of Cauer heating theory. The method of natural decoupling is proposed to investigate the characteristics of thermal dynamics. And then the interaction mechanism of thermal dynamics is found out. Accordingly, the characterization of thermal dynamics component is established. On this basis, the mathematical models of transient junction temperature and the junction temperature fluctuation against PWM pulse power signal are established, using the method of natural decoupling and accurate compensation. The dynamical characteristics of junction temperature are studied under different signals including amplitude, period and duty ratio. The results of simulations and experiments verify the rightness and accuracy of the models. It is useful to find out the operation rules of junction temperature and interaction mechanisms of thermal dynamics, realize the fast and effective simulation, and set up the multi-timescale thermal mathematical model.
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Received: 18 April 2017
Published: 30 June 2017
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2017, Vol. 32 
