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| Junction Temperature Extraction with Maximum Collector Current Falling Rate during Turn-Off for Press-Pack IGBT Modules |
| Chang Yao, Chen Yuxiang, Li Wuhua, Li Weichen, He Xiangning |
| College of Electrical Engineering Zhejiang University Hangzhou 310027 China |
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Abstract Press-pack insulated gate bipolar transistor (IGBT) modules are characterized by advanced electric property and package design, which draws much attention from high power application such as voltage-source-converter based high-voltage-direct-current (VSC-HVDC) transmission. The reliability of IGBT modules becomes the research focus for power devices in high power application and junction temperature monitoring is closely relative to reliability analysis. Based on press-pack IGBT double-pulse test platform, this paper introduced a junction temperature extraction method with maximum collector current falling rate (diC/dt)max. And the inherent monotonic relationship between IGBT chip temperature and maximum collector current falling rate was explored. Considering the package features of press-pack IGBT modules, the intrinsic parasitic inductance within module was utilized to obtain maximum collector current falling rate and the temperature characteristics was deduced as well. Finally the experimental verification was performed by the press-pack IGBT double-pulse test platform to confirm the feasibility of proposed junction temperature extraction method with maximum collector current falling rate.
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Received: 10 April 2017
Published: 30 June 2017
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2017, Vol. 32 
